Cypress Semiconductor Corp S26KL128SDABHB020

Overview

S26KL128SDABHB020 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KL128SDABHB020 datasheet, S26KL128SDABHB020 pinout, S26KL128SDABHB020 application, or S26KL128SDABHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification status.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with CK/CK# enabling edge-aligned capture and RWDS providing read-data timing reference. Internal MIRRORBIT™ architecture enables dual half-page access per 32-byte page, supporting wrapped (16/32/64-byte) or linear burst modes.

The embedded algorithm controller (EAC) autonomously executes program/erase sequences-including 512-byte buffer programming (475 µs) and 256-KB sector erase (930 ms)-while the host interface controller (HIC) manages real-time signal synchronization, power transition signaling, and interrupt generation via INT# on ECC detection or busy-to-ready transitions.

Key Specifications

Pinout & Package

24-ball Fortified Ball Grid Array (FBGA) package, VAA024 footprint (5 mm × 5 mm × 1.0 mm), RoHS-compliant, lead-free, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL128SDABHB020, the S26KS128SDABHB020 offers identical performance and compatibility for legacy Cypress designs, while S26KL128SDABHI020 extends thermal capability to +105°C-making it suitable for under-hood automotive or high-ambient industrial deployments without changing interface or firmware.

Availability

S26KL128SDABHB020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging boot loaders, and avionics display systems requiring stable component supply across long product lifecycles.

Supply support for S26KL128SDABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

This device belongs to the HYPERFLASH™ family-designed specifically to replace parallel NOR and QSPI flash in bandwidth-constrained embedded systems requiring deterministic boot performance, ECC-protected code storage, and automotive-grade reliability.

FAQ

What is the minimum supported clock frequency for S26KL128SDABHB020?

The device supports variable clock rates down to DC (0 Hz) in standby and deep power-down modes. During active read/write operations, the minimum functional clock frequency is not specified in the datasheet; however, timing parameters are guaranteed only within the rated 100 MHz (3.0 V) or 166 MHz (1.8 V) maximum ranges. System-level timing margin analysis must verify setup/hold at lower frequencies.

Does S26KL128SDABHB020 support XIP (eXecute-In-Place) operation?

Yes, S26KL128SDABHB020 supports true XIP operation via its synchronous HYPERBUS™ DDR interface. The device outputs instruction words directly to the host processor's prefetch buffer without intermediate buffering, enabled by deterministic 96 ns random access and continuous burst streaming-confirmed in Section 1.2 and Figure 1 of datasheet Rev. *Q.

How is the 512-byte program buffer utilized during write operations?

The internal 512-byte buffer allows host software to issue a single write command followed by up to 512 bytes of data, reducing command overhead. Buffer programming completes in 475 µs (typical), achieving ~1 MBps effective write speed-significantly faster than single-word programming (500 µs per 2 bytes), as documented in Table 2 of the datasheet.

Is RSTO# assertion synchronized to any internal state or clock?

RSTO# is generated asynchronously by the embedded algorithm controller upon power-on reset completion and is not tied to CK/CK#. Its LOW pulse duration is user-configurable via non-volatile register settings (Section 7.1), with typical duration ranging from 100 µs to 100 ms-allowing precise coordination with host processor reset timing requirements.