Cypress Semiconductor Corp S26KL128SDABHI030

Overview

S26KL128SDABHI030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KL128SDABHI030 datasheet, S26KL128SDABHI030 pinout, S26KL128SDABHI030 application, or S26KL128SDABHI030 equivalent, key selection criteria include DDR read bandwidth, sector protection granularity, deep power-down current (4 µA), RWDS timing alignment, and AEC-Q100 grade compatibility for automotive control units.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS edge-aligned to CK/CK# transitions during reads. Its internal MIRRORBIT™ architecture enables page-based access (32-byte pages, 16-byte half-pages) and linear burst prefetching to sustain 333 MBps throughput.

Control logic splits into Host Interface Controller (HIC) for signal-level protocol handling and Embedded Algorithm Controller (EAC) for autonomous program/erase execution. ECC and CRC support operate inline during read/write, and RSTO# provides user-configurable reset pulse width for system power-on sequencing.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, suitable for high-density PCB layouts with thermal reliability up to +125°C junction temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL128SDABHI030, the Cypress alternative trades DDR performance for 3.0 V compatibility, while Winbond's QSPI part sacrifices bandwidth and hardware ECC for universal MCU support - neither matches the 333 MBps deterministic read or automotive-grade reliability of the Infineon HYPERFLASH™ device.

Availability

S26KL128SDABHI030 is available at Aetrix Electronics and suitable for automotive ECU firmware storage, industrial PLC code retention, and medical imaging boot loader applications requiring stable component supply across extended product lifecycles.

Supply support for S26KL128SDABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with ISO/TS 16949 certification and global manufacturing footprint.

This device belongs to the HYPERFLASH™ family - engineered specifically for high-bandwidth, low-pin-count boot memory in automotive, industrial, and communications systems demanding deterministic timing and long-term data integrity.

FAQ

What voltage levels does S26KL128SDABHI030 support for core and I/O operation?

The device supports 1.8 V for both VCC (core) and VCCQ (I/O), enabling full DDR operation at 166 MHz with 333 MBps throughput. It does not support mixed-voltage operation; 3.0 V variants (e.g., S26KL128SDABHI020) are separate orderable parts with different timing and interface characteristics.

How is the RWDS signal used during read operations?

RWDS is an output strobe referenced to CK/CK# edges, active only during read data transfers. It transitions on both rising and falling edges to indicate valid DQ[7:0] data windows. Host controllers must sample DQ on RWDS edges-not clock edges-to ensure correct data capture in DDR mode.

Does S26KL128SDABHI030 require external ECC handling?

No. The device integrates hardware ECC capable of 1-bit correction and 2-bit detection on all read operations, plus CRC for command/address integrity. No external logic or software intervention is needed for error mitigation during normal read/write sequences.

What is the wake-up time from Deep Power-Down mode?

Deep Power-Down exit requires 300 µs before the device accepts new commands. During this period, CS# must remain asserted (LOW), and CK/CK# must be stable. After wake-up, the device resumes normal operation without requiring initialization commands or reset assertion.