Cypress Semiconductor Corp S26KL128SDABHV020

Overview

S26KL128SDABHV020 from Infineon Technologies is a 128-Mb (16-MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), RWDS read strobe, and CS# chip select. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, 100,000 program/erase cycles, and 20-year data retention.

For engineers reviewing the S26KL128SDABHV020 datasheet, S26KL128SDABHV020 pinout, S26KL128SDABHV020 application, or S26KL128SDABHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, industrial-plus temperature range (–40°C to +105°C), FBGA-24 package compatibility, and RSTO#/INT# interrupt/reset signaling.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer synchronization with CK/CK#, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. RWDS is edge-aligned to CK transitions during reads, enabling precise DDR data capture.

It supports configurable burst modes - wrapped (16/32/64 bytes) or linear - with automatic next-page prefetch during linear bursts to sustain 333 MBps throughput. The MIRRORBIT™ memory array enables 16-bit word-wide addressing and page-aligned 32-byte random reads with 5–16 clock-cycle initial latency.

Key Specifications

Pinout & Package

Package: 24-ball Fortified BGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8-mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KL128SDABHV010 and S26KS128SDABHV020, the S26KL128SDABHV020 uniquely combines 1.8 V HYPERBUS™ DDR performance (333 MBps), +105°C operation, and AEC-Q100 Grade 2 certification-making it the only option qualified for thermally demanding automotive boot applications requiring differential signaling.

Availability

S26KL128SDABHV020 is available at Aetrix Electronics and suitable for automotive ECU boot memory, industrial PLC firmware storage, medical imaging subsystems, and 5G baseband processor code loading requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KL128SDABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

The HYPERFLASH™ product line delivers high-speed, low-pin-count synchronous NOR flash optimized for boot code execution and firmware storage in resource-constrained, thermally demanding embedded systems.

FAQ

What is the minimum and maximum supply voltage for S26KL128SDABHV020?

The device requires VCC and VCCQ supplies in the range of 1.7 V to 1.95 V (1.8 V nominal). It is not compatible with 3.0 V operation-this part belongs to the 1.8 V HYPERBUS™ family and uses differential CK/CK#. Operation outside this range may cause timing violations or permanent damage.

Does S26KL128SDABHV020 support both wrapped and linear burst modes?

Yes, it supports both burst types per transaction. Wrapped burst lengths are configurable to 16, 32, or 64 bytes; linear burst continues sequentially until CS# deasserts. Linear mode enables automatic next-page prefetch, sustaining 333 MBps throughput during sequential reads.

How does the RSTO# pin function, and can its pulse width be modified?

RSTO# is an open-drain output that asserts LOW during power-on reset. Its duration is user-configurable via internal registers (default 100 ms). The pulse width can be programmed to 10 ms, 100 ms, or 1 s to match downstream power sequencing requirements of companion SoCs or PMICs.

Is ECC applied automatically during read operations, and what happens on detection?

ECC is always active during reads. A 1-bit error is corrected transparently; a 2-bit error triggers INT# assertion and sets an error flag in status registers. No host intervention is required for correction, but software must poll INT# or status registers to detect and log uncorrectable events.