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Cypress Semiconductor Corp S26KL256SDABHB020

Part No.:
S26KL256SDABHB020
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26KL256SDABHB020.pdf
Description:
IC FLASH 256MBIT PAR 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:340

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Product details

Overview

S26KL256SDABHB020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) for embedded control firmware storage in automotive ADAS ECUs.

For engineers reviewing the S26KL256SDABHB020 datasheet, S26KL256SDABHB020 pinout, S26KL256SDABHB020 application, or S26KL256SDABHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), ECC 1-bit correction/2-bit detection, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and AEC-Q100 Grade 2 qualification.

Technical Context

This device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling referenced to CK/CK#. Read operations require initial latency of 5–16 clock cycles followed by wrapped or linear burst output aligned to RWDS transitions.

The internal control logic separates host interface management (HIC) from embedded algorithm execution (EAC), enabling autonomous program/erase sequences without host intervention. Sector protection includes volatile and non-volatile locking per 256-KB sector plus eight 4-KB parameter sectors, and a dedicated 1024-byte one-time-programmable array supports secure boot configuration.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density256 Mb (32 MB) - sufficient for full firmware images in mid-tier automotive microcontrollers
Interface StandardHYPERTBUS™ DDR - 11-signal low-pin-count interface with differential clock eliminates skew issues in high-speed routing
Max Read Throughput333 MBps - achieved via 166 MHz clock × 2 transfers/cycle × 1 byte width, enabling real-time code execution from flash
Random Access Time96 ns - defines minimum latency for first instruction fetch after address assertion
Erase Endurance100,000 cycles - supports field firmware updates over full product lifecycle in industrial gateways
Data Retention20 years - guaranteed retention at +105°C, critical for automotive under-hood applications
Power ModesDeep Power-Down: 4 µA - enables ultra-low standby current in always-on vehicle modules

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputReference for all DDR timing; CK rising/falling edges sample DQ and RWDS; enables jitter immunity
CS#Chip select (active low)Enables device communication; HIGH places device in standby or deep power-down mode
RWDSRead data strobe outputIndicates valid read data on DQ; edge-aligned to data transitions during read bursts
DQ[7:0]Bi-directional data busCarries commands, addresses, and 8-bit data in DDR fashion; no separate address bus required
INT#Interrupt outputSignals Busy-to-Ready transition or ECC error detection event to host processor
RSTO#Reset outputGenerates system-level power-on reset pulse; user-configurable LOW duration for sequenced power-up

Key Features

FeatureDesign Value
HYPERBUS™ DDR InterfaceReduces signal count to 11 pins while sustaining 333 MBps read speed-enables compact PCB layout in space-constrained ECUs
Configurable Burst LengthSupports 16/32/64-byte wrapped bursts or linear bursts-optimizes cache line alignment and minimizes bus turnaround overhead
ECC & CRC Protection1-bit correction / 2-bit detection with CRC checksum-ensures firmware integrity against single-event upsets in automotive environments
Advanced Sector ProtectionVolatile and non-volatile lock bits per 256-KB sector plus 4-KB parameter sectors-prevents accidental overwrite of calibration or security keys
AEC-Q100 Grade 2Qualified for –40°C to +105°C operation with ISO/TS 16949 manufacturing-meets functional safety requirements for ASIL-B systems

Applications

Automotive ADAS ECU Firmware StorageIndustrial PLC Program Memory

Use Scenario: Storing boot code and runtime firmware for radar processing units requiring deterministic startup and over-the-air update capability.

IC Role / Device Role / Timing Role: Non-volatile code storage with HYPERBUS™-based XIP (execute-in-place) support and sub-100 ns random access for instruction fetch.

Use Value: 333 MBps read bandwidth enables zero-wait-state execution; ECC ensures ASIL-B compliant firmware integrity.

Use Scenario: Holding ladder logic programs and configuration data in modular automation controllers deployed in factory environments.

IC Role / Device Role / Timing Role: High-reliability program memory with 100,000 erase cycles and 20-year retention at 85°C ambient.

Use Value: Deep power-down current (4 µA) extends battery backup runtime during mains failure; sector protection prevents corruption during brown-out events.

Medical Imaging System Boot ROMAvionics Data Logger Storage

Use Scenario: Secure boot image storage for MRI subsystem controllers where firmware validation and tamper resistance are mandated.

IC Role / Device Role / Timing Role: One-time-programmable (OTP) array stores cryptographic keys; RSTO# synchronizes power-on reset with FPGA configuration.

Use Value: Dedicated 1024-byte OTP area isolates root-of-trust keys from field-updatable firmware; AEC-Q100 Grade 2 certifies reliability in safety-critical diagnostics.

Use Scenario: Recording flight-critical sensor telemetry with guaranteed write persistence during vibration-induced power loss.

IC Role / Device Role / Timing Role: Non-volatile buffer memory supporting rapid burst writes via 512-byte program buffer and hardware data protection on power-off.

Use Value: 475 µs buffer programming time enables 1 MBps logging rate; power-loss recovery ensures no frame loss in 100 Hz sensor streams.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY15B104QN-PSOC4 Mb density, FRAM technology, 10⁶ write cycles, no erase latency, 1.8 V only, SOIC-8 packageTargeted at frequent small-write logging, not firmware storage; lacks HYPERBUS™ interface and ECCSelect when write endurance and zero-latency writes outweigh density and interface compatibility needs
S26KL512SDABHB020512 Mb density, identical pinout/package/timing, same HYPERBUS™ interface and ECC featuresDrop-in upgrade path for higher firmware footprint; requires no layout or firmware changes beyond address map extensionSelect when future-proofing for larger software stacks or dual-image OTA schemes without redesign

Compared with CY15B104QN-PSOC, S26KL256SDABHB020 provides 64× more density and HYPERBUS™-enabled XIP execution but requires erase-before-write; versus S26KL512SDABHB020, it offers identical performance in half the capacity-ideal for cost-sensitive designs with fixed firmware size.

Availability

S26KL256SDABHB020 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging controllers, and avionics data loggers requiring stable component supply, long-term lifecycle support, and AEC-Q100 qualified flash memory.

Supply support for S26KL256SDABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949.

This part belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count code storage in automotive and industrial real-time systems requiring deterministic read performance and functional safety compliance.

FAQ

What voltage levels does S26KL256SDABHB020 support for core and I/O operation?

The device operates with 1.8 V VCC/VCCQ for both core and I/O, confirmed in Table 1 of the datasheet (Rev. *Q). It is not rated for 3.0 V operation-only the S26KL256Sxxx-300 variants support 3.0 V I/O. This 1.8 V version uses differential CK/CK# and achieves 166 MHz maximum clock rate with 333 MBps throughput.

Does S26KL256SDABHB020 support execute-in-place (XIP) functionality?

Yes, it supports XIP via HYPERBUS™ DDR interface with deterministic read latency (96 ns tACC, 118 ns CS# to first word). The DCARS timing architecture and burst-oriented read protocol enable continuous instruction streaming without wait states when interfaced with compatible microcontrollers such as Infineon's AURIX™ TC3xx series.

How is ECC implemented and what error conditions does it detect?

ECC provides 1-bit correction and 2-bit detection per 512-byte sector, implemented in hardware with no host software overhead. It triggers INT# on uncorrectable errors and reports status via ID-CFI registers. ECC coverage includes main array, parameter sectors, and OTP area-verified in Section 9.1 of the datasheet.

What is the purpose of the RSTO# pin and how is its pulse width configured?

RSTO# outputs a programmable LOW pulse during power-on reset to synchronize external logic. Pulse width is set via non-volatile configuration register bits (RSTO_WIDTH[1:0]) and can be 1 ms, 10 ms, 100 ms, or 1 s. Default is 100 ms, and the setting persists across power cycles-detailed in Section 6.3 and Register Map Table 7-1.

S26KL256SDABHB020 Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
HYPERFLASH™ KL
Package/Case:
24-VBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
256Mbit
Memory Organization:
32M x 8
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
96 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S26KL256SDABHB020 FAQ

1.How can I place an order for S26KL256SDABHB020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KL256SDABHB020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KL256SDABHB020 reliable?

The price and inventory of S26KL256SDABHB020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KL256SDABHB020 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KL256SDABHB020 transactions.

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S26KL256SDABHB020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KL256SDABHB020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KL256SDABHB020?

For technical support, including S26KL256SDABHB020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KL256SDABHB020 requirements.

6.How does Aetrix verify that S26KL256SDABHB020 is sourced from the original manufacturer or authorized distributors?

All S26KL256SDABHB020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KL256SDABHB020 meets industry standards.

7.What is the process for return or replacement of S26KL256SDABHB020?

All S26KL256SDABHB020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KL256SDABHB020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KL256SDABHB020 part is unused and in its original packaging.

Return procedure for S26KL256SDABHB020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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