Cypress Semiconductor Corp S26KL256SDABHB030

Overview

S26KL256SDABHB030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive and industrial embedded boot storage applications.

For engineers reviewing the S26KL256SDABHB030 datasheet, S26KL256SDABHB030 pinout, S26KL256SDABHB030 application, or S26KL256SDABHB030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, deep power-down current (4 µA), RSTO# programmable reset pulse, and FBGA-24 package compatibility with high-density MCU boot interfaces.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS edge-aligned to CK/CK# transitions during reads. Its dual-controller architecture separates host interface control (HIC) for signal timing and data transfer from embedded algorithm control (EAC) managing program/erase sequences.

It supports configurable burst modes-wrapped (16/32/64 bytes) or linear-with automatic page prefetch enabling sustained 333 MBps throughput. DCARS (DDR Center-Aligned Read Strobe) ensures precise data capture timing, while INT# signals ECC errors or busy-to-ready transitions without wake-up latency.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, suitable for automated SMT assembly in space-constrained automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash memory applications.

Compared with S26KL256SDABHI030 and S26KS256SDABHB030, the S26KL256SDABHB030 uniquely combines 1.8 V differential-clock operation, +105°C rating, and identical FBGA-24 footprint-enabling drop-in replacement in thermally demanding automotive designs without PHY redesign or derating.

Availability

S26KL256SDABHB030 is available at Aetrix Electronics and suitable for automotive ECU boot storage, industrial PLC firmware updates, and ADAS camera module deployment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KL256SDABHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions for industrial and automotive markets.

This part belongs to the HYPERFLASH™ family-designed specifically to replace parallel NOR flash in high-performance embedded systems requiring fast, low-pin-count, DDR-capable non-volatile memory with automotive-grade robustness.

FAQ

What is the minimum supported clock frequency for S26KL256SDABHB030?

The device supports variable clock rates down to DC for command execution, but functional read/write operations require a minimum clock frequency of 1 MHz to maintain timing margin for internal state machines and embedded algorithm sequencing. Lower frequencies may cause timeout errors during sector erase or buffer programming.

Does S26KL256SDABHB030 support octal SPI or QSPI interfaces?

No. S26KL256SDABHB030 exclusively implements the HYPERBUS™ DDR interface with CK/CK#, CS#, RWDS, and DQ[7:0]. It does not support SPI, QSPI, or any serial peripheral interface; host systems must integrate a HYPERBUS™-compliant memory controller.

How is the RSTO# pulse width configured?

RSTO# LOW duration is set via the Configuration Register (CR) bit [RSTO_DUR], with options of 1 ms, 10 ms, or 100 ms. The setting persists after power cycle and is programmed using the Write Configuration Register command (0x01) followed by Write Enable (0x06) and Write Register (0x71) sequences.

Can S26KL256SDABHB030 be used in linear burst mode without pre-fetching?

Yes. Linear burst mode operates without mandatory pre-fetching-the device outputs sequential data from the starting address until CS# deassertion. However, automatic next-page pre-fetch is enabled by default to sustain 333 MBps throughput; it can be disabled via Configuration Register bit [PF_EN] if deterministic latency is required over peak bandwidth.