Cypress Semiconductor Corp S26KL256SDABHM030

Overview

S26KL256SDABHM030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive and industrial embedded boot storage applications.

For engineers reviewing the S26KL256SDABHM030 datasheet, S26KL256SDABHM030 pinout, S26KL256SDABHM030 application, or S26KL256SDABHM030 equivalent, key selection criteria include HYPERBUS™ timing compliance, ECC 1-bit correction/2-bit detection capability, RWDS-synchronized DDR read alignment, and AEC-Q100 Grade 2 qualification for automotive powertrain and ADAS firmware storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes non-volatile program/erase operations autonomously. All command/address/data traffic occurs over the same 8-bit DQ bus using DDR edge-aligned transfers.

It uses MIRRORBIT™ floating-gate technology with page-based access (32-byte pages, 16-byte half-pages), requiring 5–16 clock cycles initial latency for random reads. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, enabling optimized sequential code fetch for microcontroller boot execution.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY15B104QN-PSOC and S26KL512SDABHM020, S26KL256SDABHM030 uniquely balances 256 Mb capacity, HYPERBUS™-optimized 333 MBps throughput, and automotive-grade ECC protection - making it optimal for cost-sensitive, thermally demanding boot memory implementations where density and interface fidelity are tightly constrained.

Availability

S26KL256SDABHM030 is available at Aetrix Electronics and suitable for automotive powertrain ECUs, industrial PLCs, ADAS camera modules, and medical imaging system boot storage requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KL256SDABHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERFLASH™ family - designed specifically for high-throughput, low-pin-count boot memory in automotive and industrial systems requiring deterministic timing, ECC protection, and AEC-Q100 compliance.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KL256SDABHM030 requires 300 µs to exit Deep Power-Down mode and become ready for read access. This fixed wake-up latency is independent of temperature or voltage within specified operating ranges and is guaranteed by internal oscillator stabilization and array precharge timing.

Does this device support linear burst reads across page boundaries?

Yes - in linear burst mode, the device automatically prefetches the next sequential 32-byte page while outputting the current page, enabling continuous 333 MBps throughput without host intervention or gap penalties between pages.

How is ECC handled during read operations?

ECC is applied transparently during every read: the device calculates syndrome bits on-the-fly, corrects single-bit errors in hardware, flags uncorrectable 2-bit errors via INT#, and outputs corrected data on DQ without CPU involvement or timing penalty.

Is RWDS used during write operations?

No - RWDS is read-only and functions solely as a read data strobe. During write operations, the host drives DQ[7:0] synchronously to CK/CK#, and the device uses internal timing to latch command, address, and data without requiring RWDS feedback.