Cypress Semiconductor Corp S26KL256SDABHN030

Overview

S26KL256SDABHN030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KL256SDABHN030 datasheet, S26KL256SDABHN030 pinout, S26KL256SDABHN030 application, or S26KL256SDABHN030 equivalent, key selection criteria include HYPERBUS™ DDR timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection configurability, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive infotainment boot storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; RWDS output is edge-aligned to CK/CK# transitions during reads, and initial random access requires 5–16 clock cycles of latency before first data word appears on DQ[7:0].

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial NOR flash applications.

Compared with S26KL256SDABHN030, the Cypress alternative offers identical performance at higher temperature but no automotive qualification, while the Winbond part trades HYPERBUS™ efficiency for broader ecosystem compatibility at significantly lower bandwidth and voltage flexibility.

Availability

S26KL256SDABHN030 is available at Aetrix Electronics and suitable for automotive infotainment boot storage, industrial PLC firmware storage, and medical imaging system configuration requiring stable component supply, AEC-Q100 compliance, and guaranteed 20-year data retention.

Supply support for S26KL256SDABHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

This device belongs to the HYPERFLASH™ family, designed specifically for high-bandwidth, low-pin-count boot and firmware storage in automotive and industrial systems requiring deterministic DDR timing and robust data integrity.

FAQ

What is the purpose of the RWDS signal in S26KL256SDABHN030?

RWDS (Read Data Strobe) is an output-only signal that indicates valid data presence on DQ[7:0] during read operations. It is edge-aligned to CK/CK# transitions and used by the host to sample data synchronously. Unlike clock signals, RWDS is active only during reads and does not drive writes or commands - its timing directly determines data capture window accuracy in HYPERBUS™ DDR transfers.

Does S26KL256SDABHN030 support both 1.8 V and 3.0 V I/O operation?

No - S26KL256SDABHN030 is a 1.8 V I/O variant only, as indicated by the 'D' in the part number suffix and confirmed in Table 1 of the datasheet. It requires 1.8 V VCCQ and uses differential CK/CK# signaling. The 3.0 V variants (e.g., S26KL256SBxx) have different pinouts and timing parameters and are not interchangeable.

How is sector protection configured on this device?

Sector protection is implemented via volatile (lock bits cleared on power cycle) and non-volatile (lock bits retained across power cycles) methods. Protection is controlled per 256-KB sector using command sequences written to specific address ranges. Parameter sectors (eight 4-KB blocks) support independent locking, enabling secure storage of calibration data or cryptographic keys without affecting main array operations.

What wake-up time is required after Deep Power-Down mode?

The device requires 300 µs to exit Deep Power-Down mode and become ready for commands. During this period, CS# must remain HIGH and CK must be stable. After wake-up, the device responds to status register reads; no additional initialization sequence is needed. This delay is fixed and independent of temperature or voltage within specified operating ranges.