Cypress Semiconductor Corp S26KL512SDABHA020

Overview

S26KL512SDABHA020 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors and optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade). Used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KL512SDABHA020 datasheet, S26KL512SDABHA020 pinout, S26KL512SDABHA020 application, or S26KL512SDABHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), ECC 1-bit correction/2-bit detection, RWDS-synchronized DDR read alignment, and AEC-Q100 Grade 2 qualification for automotive powertrain systems.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-synchronized data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase algorithms without host intervention. It uses MIRRORBIT™ floating-gate technology for 20-year data retention and 100,000 program/erase cycles.

HYPERBUS™ protocol enables burst-oriented reads with configurable wrapped (16/32/64-byte) or linear modes, and supports DCARS (DDR Center-Aligned Read Strobe) timing where command/address is center-aligned to CK/CK#, and read data is edge-aligned to RWDS transitions. Initial latency is 5–16 clock cycles depending on configuration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHA020, the Cypress alternative matches pinout and protocol but omits automotive qualification, while Winbond's Octal SPI part trades bandwidth and interface simplicity for broader vendor support - making Infineon's device optimal for AEC-Q100-compliant, high-throughput embedded boot systems.

Availability

S26KL512SDABHA020 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, and avionics display units requiring stable component supply, AEC-Q100 Grade 2 qualification, and guaranteed 20-year data retention.

Supply support for S26KL512SDABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

S26KL512SDABHA020 belongs to Infineon's HYPERFLASH™ family - designed specifically for automotive and industrial applications demanding high-speed, low-pin-count, DDR-capable NOR flash with built-in ECC and robust data retention.

FAQ

What is the purpose of the RWDS signal in S26KL512SDABHA020?

RWDS (Read Data Strobe) is an output signal synchronized to read data transitions on DQ[7:0]. It indicates when valid data is present on the bus during DDR reads, allowing the host to sample data precisely on RWDS rising/falling edges rather than relying solely on CK/CK#. This decouples read-data timing from clock jitter and improves margin at 166 MHz.

Does S26KL512SDABHA020 support both 1.8 V and 3.0 V I/O operation?

No - S26KL512SDABHA020 is a 1.8 V I/O variant only, indicated by the "D" in the suffix (per Infineon ordering guide). It requires 1.8 V VCCQ and uses differential CK/CK# signaling. The 3.0 V I/O version has part number ending in "S", e.g., S26KL512SSABHA020, and uses single-ended CK.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows up to 512 bytes to be loaded into internal latches before initiating a write cycle. This reduces per-byte overhead: buffer programming completes in 475 µs (~1 MBps), versus 500 µs per 2-byte word (4 KBps) in single-word mode - accelerating firmware updates by over 250× for typical 64 KB images.

Is the RSTO# output configurable for different reset pulse widths?

Yes - RSTO# pulse width is user-configurable via internal register settings. The default is 100 ms, but it can be programmed to values between 1 ms and 1 s in 1 ms increments. This allows alignment with specific SoC reset timing requirements without external RC networks or FPGA logic.