Cypress Semiconductor Corp S26KL512SDABHI030

Overview

S26KL512SDABHI030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in automotive infotainment boot memory and real-time OS storage where high-speed sequential reads and ECC-protected reliability are required.

For engineers reviewing the S26KL512SDABHI030 datasheet, S26KL512SDABHI030 pinout, S26KL512SDABHI030 application, or S26KL512SDABHI030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized read alignment, configurable burst length (16/32/64 bytes), ECC 1-bit correction/2-bit detection, and deep power-down current (8 µA typical).

Technical Context

The device implements a synchronous DDR interface with center-aligned command/address and edge-aligned read data referenced to RWDS transitions. Its internal MIRRORBIT™ architecture enables dual-plane page access, with each 32-byte page composed of two 16-byte half-pages aligned on 16-byte boundaries.

Control logic splits into Host Interface Controller (HIC) for signal monitoring and data transfer coordination, and Embedded Algorithm Controller (EAC) for autonomous execution of program/erase sequences. All non-volatile writes require EAC-managed embedded algorithms - no direct array programming is permitted.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-SXIT, S26KL512SDABHI030 delivers 16× higher density and 1.6× peak read bandwidth but requires erase cycles and has finite endurance; versus S26KS512SDABHI020, it enables 66% higher throughput and lower active power at 1.8 V, making it optimal for thermally constrained, high-performance automotive platforms.

Availability

S26KL512SDABHI030 is available at Aetrix Electronics and suitable for automotive infotainment boot memory, industrial PLC firmware storage, and medical imaging system code storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KL512SDABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification including ISO/TS16949 and AEC-Q100.

This device belongs to the HYPERFLASH™ family - designed specifically for high-bandwidth, low-pin-count boot and code storage in automotive, industrial, and aerospace systems demanding deterministic timing, ECC protection, and extended temperature operation.

FAQ

What is the function of the RWDS signal in S26KL512SDABHI030?

RWDS (Read Data Strobe) is an output signal synchronized to read data edges on DQ[7:0]. It indicates when valid read data is present and is used by the host to latch data correctly. RWDS transitions align with data edges-not clock edges-and are only active during read operations. It is not used for write operations or command transmission.

Does S26KL512SDABHI030 support both 1.8 V and 3.0 V I/O operation?

No. S26KL512SDABHI030 is a 1.8 V I/O variant with differential clock (CK/CK#) and supports up to 166 MHz operation. The 3.0 V I/O version is a separate part number (e.g., S26KS512SDABHI020) with single-ended clock and 100 MHz maximum clock rate. Mixing voltage domains may damage the device.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows the host to issue one command and stream up to 512 bytes of data before triggering internal programming. This reduces command overhead and enables ~1 MBps effective write speed-over 2000× faster than single-word programming (4 KBps). Buffer programming is mandatory for efficient firmware updates.

Is RSTO# output configurable, and what is its purpose?

Yes. RSTO# is a user-configurable open-drain output that asserts a LOW pulse during power-on reset. Its duration is programmable via internal registers and used to synchronize system-level reset sequencing. It replaces external RC-based reset generators, improving timing accuracy and reducing BOM count in automotive and avionics designs.