Cypress Semiconductor Corp S26KS128SDABHB030

Overview

S26KS128SDABHB030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KS128SDABHB030 datasheet, S26KS128SDABHB030 pinout, S26KS128SDABHB030 application, or S26KS128SDABHB030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection granularity, ECC capability, and low-power deep power-down (4 µA typical) for automotive and industrial host controllers.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with read data edge-aligned to RWDS transitions and clock edges referenced to CK/CK#. The internal MIRRORBIT™ architecture enables page-based access (32-byte pages, 16-byte half-pages) and supports both wrapped (16/32/64-byte) and linear burst modes.

It integrates dual control logic blocks: Host Interface Controller (HIC) handles real-time signal monitoring and data transfer coordination, while Embedded Algorithm Controller (EAC) executes non-volatile programming/erase sequences-including sector erase, buffer programming, and volatile/non-volatile protection-without host intervention.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash memory applications.

Compared with CY15B104QN-PSOC and S26KL128SDABHB020, S26KS128SDABHB030 uniquely combines AEC-Q100 Grade 2 qualification, 333 MBps DDR read throughput, and embedded ECC-making it the only option for automotive-grade XIP boot memory demanding both speed and functional safety compliance.

Availability

S26KS128SDABHB030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC firmware storage, medical imaging boot loaders, and 5G small cell baseband processors requiring stable component supply across extended lifecycle programs.

Supply support for S26KS128SDABHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT applications.

The HYPERFLASH™ product line targets high-performance embedded boot memory needs, delivering DDR-speed NOR flash with reduced pin count and integrated ECC to replace legacy parallel NOR in next-generation MCUs and SoCs.

FAQ

What is the difference between S26KS128SDABHB030 and S26KL128SDABHB020?

S26KS128SDABHB030 is AEC-Q100 Grade 2 qualified (–40°C to +105°C) and supports differential clock (CK/CK#) for HYPERBUS™ DDR operation. S26KL128SDABHB020 shares the same density and package but is Industrial Plus rated only and uses single-ended clock-lacking automotive qualification and full HYPERBUS™ timing compliance.

Does S26KS128SDABHB030 require external termination resistors for CK/CK#?

Yes. Per Infineon's layout guidelines, 100 Ω differential termination is required between CK and CK# near the device balls. Additionally, 50 Ω single-ended termination to VCCQ is recommended for each clock line to minimize signal reflection and jitter in high-speed DDR operation.

Can RWDS be used as a general-purpose GPIO?

No. RWDS is a dedicated open-drain output strictly tied to read-data validity timing. It cannot be configured as an input or bidirectional pin. Its duty cycle and edge alignment are fixed by internal timing logic and must be used solely for synchronizing host read capture relative to DQ transitions.

How is the 512-byte program buffer utilized during write operations?

The 512-byte buffer allows up to 32 consecutive 16-bit writes to be queued before triggering internal programming. This reduces host overhead and improves effective write throughput to ~1 MBps-versus 4 KBps for single-word programming-by amortizing erase latency across multiple words within the same page.