Cypress Semiconductor Corp S26KS128SDABHI030

Overview

S26KS128SDABHI030 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, RWDS read strobe, and CS# control. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KS128SDABHI030 datasheet, S26KS128SDABHI030 pinout, S26KS128SDABHI030 application, or S26KS128SDABHI030 equivalent, key selection criteria include DDR burst timing compliance, RWDS-synchronized read latency (96 ns tACC), sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade compatibility for automotive control modules.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS output aligned to CK/CK# edges during reads. Its dual-controller architecture separates host interface logic (HIC) for signal timing and data transfer from embedded algorithm controller (EAC) managing program/erase sequences.

HYPERBUS™ protocol enables wrapped or linear burst reads up to 64 bytes per transaction, with configurable output drive strength and DCARS (DDR Center-Aligned Read Strobe) functionality ensuring precise data capture. Internal MIRRORBIT™ array organization supports 32-byte page-aligned random access with 5–16 clock-cycle initial latency.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 1.0 mm height, 0.8 mm ball pitch - optimized for high-density PCB layouts in automotive ADAS and industrial PLCs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-PSOC and S26KL128SDABHI020, S26KS128SDABHI030 uniquely balances 333 MBps DDR throughput, automotive-grade reliability, and 1.8 V low-power operation-making it optimal for next-generation ECU and edge AI inference boot storage where bandwidth, density, and thermal robustness are co-constrained.

Availability

S26KS128SDABHI030 is available at Aetrix Electronics and suitable for automotive engine control units, industrial programmable logic controllers, medical imaging subsystems, and avionics display processors requiring stable component supply across extended product lifecycles.

Supply support for S26KS128SDABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

This part belongs to the HYPERFLASH™ family designed specifically for high-bandwidth, low-pin-count boot memory in safety-critical embedded systems where DDR interface efficiency replaces legacy parallel NOR architectures.

FAQ

What is the minimum supported clock frequency for S26KS128SDABHI030?

The device operates down to DC for command execution but requires a functional clock for DDR data transfers. Minimum operational clock frequency is not specified in the datasheet; however, timing parameters scale linearly with clock period, and all AC characteristics are guaranteed from 100 MHz (3.0 V) or 166 MHz (1.8 V) down to the point where tACC remains ≥96 ns. System-level validation is required below 50 MHz.

Does S26KS128SDABHI030 support XIP (eXecute-In-Place) operation?

Yes, S26KS128SDABHI030 supports true XIP mode via its synchronous HYPERBUS™ interface. The device outputs instruction words directly on DQ[7:0] synchronized to RWDS, allowing ARM Cortex-M/A series processors to execute code from flash without internal RAM buffering. No external glue logic is needed beyond standard DDR termination.

How is the 1024-byte one-time-programmable (OTP) array accessed?

The OTP array resides at fixed address 0x0000_0000 in the ID-CFI ASO map and is accessed using standard HYPERBUS™ read commands with address offset 0x0000. Programming requires issuing the 0x80 command followed by 0x20 to the OTP region, then verifying with 0x70 status polling. Once programmed, bits cannot be reset; write protection is enforced by hardware fuse.

Can RWDS be disabled or repurposed as a general-purpose I/O?

No, RWDS is a dedicated, unidirectional output signal generated internally during read operations and cannot be disabled or reassigned. Its timing is tightly coupled to CK/CK# and DQ data transitions; attempting to drive or float RWDS violates HYPERBUS™ protocol and causes read corruption. External pull-up/pull-down resistors are prohibited per datasheet Section 11.5.