Cypress Semiconductor Corp S26KS128SDABHM030

Overview

S26KS128SDABHM030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KS128SDABHM030 datasheet, S26KS128SDABHM030 pinout, S26KS128SDABHM030 application, or S26KS128SDABHM030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 Grade 3 qualification status.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with CK/CK# enabling edge-aligned capture and RWDS providing read-data timing reference. Internal MIRRORBIT™ architecture enables dual-plane page access, supporting 32-byte aligned random reads with 5–16 clock-cycle initial latency.

The embedded algorithm controller (EAC) autonomously executes program/erase sequences-including 512-byte buffer programming (475 µs) and 256-KB sector erase (930 ms)-while the host interface controller (HIC) handles real-time signal synchronization, burst type selection (wrapped/linear/hybrid), and low-power mode transitions without wake-up overhead in active clock stop or standby modes.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS128SDABHM030, the Cypress alternative trades bandwidth and timing precision for 3.0 V compatibility, while the Winbond part replaces HYPERBUS™ complexity with simpler SPI but sacrifices automotive qualification, ECC, and deterministic read latency-making S26KS128SDABHM030 the sole choice for AEC-Q100 Grade 3 systems needing 333 MBps DDR throughput.

Availability

S26KS128SDABHM030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging system boot memory, and avionics display unit code storage requiring stable component supply across extended product lifecycles.

Supply support for S26KS128SDABHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

The HYPERFLASH™ product line targets automotive and industrial applications requiring high-speed, low-pin-count, AEC-Q100-qualified NOR flash for deterministic boot and firmware execution in safety-critical systems.

FAQ

What is the minimum supported clock frequency for S26KS128SDABHM030?

The device supports variable clock rates down to DC (0 Hz) in active clock stop mode, where it maintains data integrity and responds to CS# assertion without wake-up delay. Functional operation begins at 1 MHz for standard read/write transactions, with guaranteed timing compliance across the full 1–166 MHz range per datasheet Table 12.2.

Does S26KS128SDABHM030 require external termination resistors on CK/CK# or RWDS lines?

Yes. Per Infineon's layout guidelines (Datasheet Section 15.1), 50 Ω series termination is required on CK and CK# near the memory device, and 50 Ω parallel AC-coupled termination (100 nF capacitor + 50 Ω resistor to VDDQ) is mandatory on RWDS to meet HYPERBUS™ signal integrity requirements for 166 MHz DDR operation.

How is the 512-byte program buffer utilized during write operations?

The buffer operates as a write-through cache: host writes 512 bytes to consecutive addresses in the buffer region, then issues a single program command. The embedded algorithm controller (EAC) automatically executes the full 512-byte programming sequence in 475 µs, eliminating per-word command overhead and achieving ~1 MBps effective write speed versus 4 KBps for single-word writes.

Can S26KS128SDABHM030 be used in systems without a HYPERBUS™-capable memory controller?

No. The device requires a HYPERBUS™-compliant master that supports DDR signaling on DQ[7:0], differential clock (CK/CK#), RWDS synchronization, and HYPERFLASH™-specific command encoding (e.g., 0x02 for buffer program, 0x20 for sector erase). Standard SPI, QSPI, or parallel NOR controllers cannot interface with this device.