Cypress Semiconductor Corp S26KS128SDABHN030

Overview

S26KS128SDABHN030 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 compliance.

For engineers reviewing the S26KS128SDABHN030 datasheet, S26KS128SDABHN030 pinout, S26KS128SDABHN030 application, or S26KS128SDABHN030 equivalent, this page provides verified technical context for high-speed boot code storage, real-time firmware execution, and ECC-protected embedded memory systems requiring deterministic latency and low-power deep power-down modes.

Technical Context

The device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate timing referenced to CK/CK#. Read transactions use either wrapped (16/32/64-byte) or linear burst modes, with initial random access latency of 5–16 clock cycles and 96 ns tACC.

Internally, it separates host interface control (HIC) from embedded algorithm control (EAC), enabling autonomous program/erase execution without host intervention. ECC provides 1-bit correction and 2-bit detection, while CRC supports integrity verification during configuration and data transfers.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY15B104QN-PSOC, S26KS128SDABHN030 delivers 8× higher read bandwidth and true XIP capability but requires erase cycles. Against S26KL128SDABHN020, it enables higher performance and lower power at 1.8 V while demanding differential clock routing.

Availability

S26KS128SDABHN030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging systems, and avionics display controllers requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle support.

Supply support for S26KS128SDABHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

This device belongs to Infineon's HYPERFLASH™ family - engineered specifically for high-speed, low-pin-count boot memory in safety-critical embedded systems where DDR throughput, ECC integrity, and AEC-Q100 compliance are mandatory.

FAQ

What is the minimum supported clock frequency for S26KS128SDABHN030?

The device supports clock frequencies down to DC (0 Hz) in standby and deep power-down modes. For active read/write operations, the minimum operational clock rate is 1 MHz, as specified in the AC characteristics table of the official datasheet (Rev. *Q, Section 12.2). This allows flexible timing adaptation in low-power or variable-frequency host systems.

Does S26KS128SDABHN030 support XIP (eXecute-In-Place) operation?

Yes - the device supports true XIP via its synchronous HYPERBUS™ DDR interface and deterministic 96 ns random access time. Host processors with integrated HYPERBUS™ masters (e.g., certain NXP S32K/S32G or Infineon AURIX™ MCUs) can execute code directly from the flash array without copying to RAM, reducing boot latency and memory footprint.

How is the RSTO# output configured for different reset pulse widths?

RSTO# pulse duration is set via the Configuration Register (CR) bits [11:8], allowing user-selectable LOW periods from 1 ms to 128 ms in powers of two. The setting persists across power cycles and is non-volatile. Configuration occurs through standard HYPERFLASH™ command sequences (e.g., Write to Configuration Register command 60h).

Can S26KS128SDABHN030 operate with a single-ended clock instead of differential CK/CK#?

No - this specific variant (S26KS128SDABHN030) is designated for 1.8 V I/O operation and requires differential CK/CK# signaling per the HYPERBUS™ specification. Single-ended clock support is only available in the 3.0 V variants (e.g., S26KL128S series), which use CK only and lack CK#.