Cypress Semiconductor Corp S26KS128SDABHV030

Overview

S26KS128SDABHV030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and 3.0 V core, delivering 333 MBps sustained read throughput via differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and RWDS read strobe. It supports uniform 256-KB sector erase, 100,000 program/erase cycles, and AEC-Q100 Grade 2 (–40°C to +105°C) for automotive infotainment boot storage.

For engineers reviewing the S26KS128SDABHV030 datasheet, S26KS128SDABHV030 pinout, S26KS128SDABHV030 application, or S26KS128SDABHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC, 166 MHz max clock), ECC 1-bit correction/2-bit detection, configurable burst length (16/32/64 bytes), RSTO# programmable reset pulse, and FBGA-24 package compatibility with high-density MCU boot interfaces.

Technical Context

This device implements a synchronous DDR architecture where command/address and data share the 8-bit DQ bus, with RWDS edge-aligned to data transitions during reads and CK/CK# used for capture timing. The embedded algorithm controller (EAC) autonomously executes sector erase and buffer programming without host intervention beyond command issuance.

It features dual power domains (VCC = 3.0 V core, VCCQ = 1.8 V I/O), supports both wrapped and linear burst modes, and uses MIRRORBIT™ technology enabling 16-bit word-wide addressing with 32-byte page-aligned random access and 5–16 clock-cycle initial latency depending on configuration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS128SDABHV030, the Cypress S26KS128SDABHV020 offers identical functionality minus automotive qualification, while Winbond W25Q128JVSIM trades HYPERBUS™ performance and reliability for SPI simplicity and lower cost-making the Infineon part optimal for new automotive and high-throughput embedded designs.

Availability

S26KS128SDABHV030 is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS domain controllers, and industrial HMI displays requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant flash memory.

Supply support for S26KS128SDABHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family, designed specifically for high-speed, low-pin-count boot and code storage in automotive and industrial applications demanding DDR-level throughput with NOR reliability.

FAQ

What voltage domains does S26KS128SDABHV030 support?

The device operates with separate 3.0 V core supply (VCC) and 1.8 V I/O supply (VCCQ). This dual-voltage architecture enables high-speed DDR signaling on the DQ bus while maintaining compatibility with 1.8 V logic families and reducing I/O power consumption. Both supplies must be ramped monotonically during power-up per datasheet Section 11.6.

How does the RWDS signal function during read operations?

RWDS is an output strobe edge-aligned with valid read data on DQ[7:0]; it toggles on both rising and falling edges of CK during the data transfer portion of a read. Host controllers use RWDS-not CK-to latch incoming data, ensuring timing margin against clock skew. RWDS is inactive during write and command phases.

Can S26KS128SDABHV030 perform true concurrent read-while-write operations?

No. While the device supports background erase and program operations managed by the embedded algorithm controller (EAC), it does not support simultaneous read and write to different memory regions. Reads are blocked during active erase or program cycles; the INT# pin signals busy-to-ready transition to inform the host when operations complete.

What is the purpose of the PSC and PSC# pins listed in the block diagram?

PSC and PSC# are not implemented in the S26KS128SDABHV030 package. They appear in the generic HYPERFLASH™ logic diagram but are reserved and unconnected in this 24-ball FBGA variant. Only CK, CK#, CS#, DQ[7:0], RWDS, RSTO#, INT#, VCC, VCCQ, VSS, and NC balls are functional per Package Diagram (Datasheet Rev. *Q, Section 15.1).