Cypress Semiconductor Corp S26KS128SDGBHN030

Overview

S26KS128SDGBHN030 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS128SDGBHN030 datasheet, S26KS128SDGBHN030 pinout, S26KS128SDGBHN030 application, or S26KS128SDGBHN030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive infotainment boot storage.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS edge-aligned to data transitions during reads and CK/CK# used for capture timing. Internal MIRRORBIT™ architecture enables parallel half-page access and linear burst prefetching to sustain 333 MBps throughput.

The embedded algorithm controller (EAC) autonomously executes program/erase sequences upon host command write; no external timing control is required for sector erase (930 ms typical) or buffer programming (475 µs for 512 B). ECC and CRC support operate transparently during read operations without host intervention.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL128SDHBHI020 and W25Q128JVSIM, the S26KS128SDGBHN030 uniquely combines automotive-grade reliability, DDR-level throughput, and hardware ECC in a 24-ball footprint-making it the only option for safety-critical, high-bandwidth boot storage in modern vehicle platforms.

Availability

S26KS128SDGBHN030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, medical imaging boot loaders, and avionics display systems requiring stable component supply across extended product lifecycles.

Supply support for S26KS128SDGBHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and security applications.

The HYPERFLASH™ product line targets high-reliability embedded systems needing fast, deterministic boot and firmware storage with minimal pin count-specifically designed for next-generation automotive ECUs and industrial controllers demanding AEC-Q100 compliance and 20-year data retention.

FAQ

What is the minimum supported clock frequency for S26KS128SDGBHN030?

The device supports variable clock rates down to DC for command execution, but sustained DDR read operations require ≥1 MHz to maintain RWDS synchronization. The datasheet specifies timing parameters for 100 MHz (3.0 V) and 166 MHz (1.8 V) operation; lower frequencies are permitted with adjusted tACC and latency values derived from the AC characteristics table.

Does S26KS128SDGBHN030 support execute-in-place (XIP) operation?

Yes, it supports XIP directly from the HYPERBUS™ interface. The DDR protocol enables continuous instruction fetch without CPU intervention, and the 96 ns random access time ensures low-latency vector table reads. Host must configure burst mode and address alignment per the HYPERBUS™ protocol specification to avoid pipeline stalls.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes of data in a single write transaction, then internally programs all data in one optimized operation taking ~475 µs. This reduces host overhead versus single-word programming (500 µs per 2 bytes) and improves effective write throughput to ~1 MBps, critical for firmware update efficiency.

Can INT# be used to detect ECC-correctable errors only, or also uncorrectable ones?

INT# asserts for both 1-bit correctable and 2-bit detectable ECC errors. The host reads the status register to determine error type: bit 1 (ECCERR) indicates correction occurred; bit 0 (ECCFAIL) indicates detection of uncorrectable error. No separate interrupt flag exists-software must decode the register after each INT# assertion.