Cypress Semiconductor Corp S26KS256SDABHM030

Overview

S26KS256SDABHM030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read data strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for boot code storage in automotive ADAS ECUs.

For engineers reviewing the S26KS256SDABHM030 datasheet, S26KS256SDABHM030 pinout, S26KS256SDABHM030 application, or S26KS256SDABHM030 equivalent, key selection criteria include DDR burst timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive embedded systems.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer synchronization with CK/CK#, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology enabling 100,000 program/erase cycles and 20-year data retention.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; read operations use RWDS edge alignment, while write operations rely on center-aligned clock sampling. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, with automatic page prefetch during linear bursts sustaining 333 MBps throughput.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant, with thermal pad exposed on bottom side for enhanced heat dissipation in automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KS256SDABHM020, the HM030 trades extended temperature rating for lower cost and identical functionality in standard industrial environments; versus S26KL256SDABHM030, it delivers 66% higher bandwidth and better EMI resilience via differential clocking, justifying migration in new 1.8 V designs.

Availability

S26KS256SDABHM030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging systems, and avionics displays requiring stable component supply across extended product lifecycles.

Supply support for S26KS256SDABHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This part belongs to the HYPERFLASH™ family, designed specifically for high-bandwidth, low-pin-count boot memory in safety-critical embedded systems where DDR interface efficiency and AEC-Q100 qualification are essential.

FAQ

What is the minimum required RWDS setup time relative to CK for reliable read capture?

RWDS must be stable ≥0.35 ns before the first rising edge of CK during read initialization, per AC timing specification tRWDSCK. This ensures proper edge alignment of read data on DQ signals. The device does not require external RWDS delay tuning when layout follows Infineon's recommended trace length matching (CK/RWDS skew < 10 ps).

Does S26KS256SDABHM030 support XIP (eXecute-In-Place) operation?

Yes, it supports true XIP mode with zero-wait-state execution from linear burst reads, enabled by deterministic 96 ns initial access time and continuous 333 MBps throughput. The HIC delivers instruction fetches directly to the host bus without internal buffering delays, verified in ARM Cortex-R5F reference designs with ≤2% instruction stall rate.

How is the 512-byte program buffer utilized during multi-word writes?

The buffer accepts up to 512 consecutive bytes via DDR writes before triggering internal programming. Host writes must align to 16-bit boundaries and avoid crossing 512-byte boundaries mid-burst. Once full, the EAC initiates automatic 475 µs buffer programming, freeing the interface for other commands while flash cells are charged.

Can RSTO# be disabled or configured as a general-purpose output?

No, RSTO# is a dedicated open-drain output with fixed function: asserting LOW during power-on reset and releasing HIGH after internal voltage stabilization (~100 µs). Its pulse width is programmable via configuration register (0x0000_0004), but the pin cannot be repurposed as GPIO or disabled in any operational mode.