Cypress Semiconductor Corp S26KS256SDABHN030

Overview

S26KS256SDABHN030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS256SDABHN030 datasheet, S26KS256SDABHN030 pinout, S26KS256SDABHN030 application, or S26KS256SDABHN030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection configuration, deep power-down current (4 µA), and AEC-Q100 grade compatibility for automotive control modules.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer synchronization with CK/CK# and RWDS, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; read data is edge-aligned to RWDS transitions, while commands are center-aligned to CK edges. Initial random read latency is configurable from 5–16 clock cycles, with 96 ns tACC guaranteed at 166 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-SXIT and S26KL256SDABHN020, the S26KS256SDABHN030 uniquely balances high density, DDR bandwidth, and automotive qualification-making it optimal for next-gen boot memory where speed, safety, and scalability intersect.

Availability

S26KS256SDABHN030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC firmware storage, medical imaging boot loaders, and 5G baseband radio firmware requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KS256SDABHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing facilities.

This part belongs to the HYPERFLASH™ family-designed specifically for high-speed, low-pin-count boot memory in automotive, industrial, and communications systems requiring deterministic read performance and AEC-Q100 compliance.

FAQ

What is the minimum initial read latency in clock cycles for S26KS256SDABHN030?

The initial random read latency is configurable from 5 to 16 clock cycles, depending on system timing margin and burst mode selection. At 166 MHz with default configuration, the device guarantees 96 ns access time, which corresponds to six clock cycles (6 × 6.02 ns ≈ 36.1 ns per cycle, cumulative delay aligns with tACC spec). This latency is fixed per transaction and does not vary with address location.

Does S26KS256SDABHN030 support both 1.8 V and 3.0 V I/O operation?

No-S26KS256SDABHN030 is a 1.8 V I/O-only device with differential clock (CK/CK#) support. It is not compatible with 3.0 V signaling. The 'S' suffix in the part number denotes 1.8 V I/O; the 3.0 V variant is designated as S26KL256S (e.g., S26KL256SDABHN020). Mixing voltage domains risks permanent damage to the I/O circuitry.

How is ECC implemented and what happens on uncorrectable errors?

ECC is implemented in hardware using Hamming codes for 1-bit correction and 2-bit detection across each 512-byte sector. When a correctable error occurs, the corrected data is returned transparently; on 2-bit (or greater) errors, the INT# pin asserts LOW and the status register flags an ECC error. No automatic retry or data masking occurs-the host must handle the interrupt and initiate recovery.

Can RWDS be disabled or repurposed for other functions?

No-RWDS is a dedicated, always-active output tied to the internal read-data strobe generator and cannot be disabled or reassigned. It is essential for timing synchronization during DDR reads and has no alternate function. During write operations or idle states, RWDS remains static (typically HIGH), and its behavior is not software-controllable.