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Cypress Semiconductor Corp S26KS256SDABHV030
- Part No.:
- S26KS256SDABHV030
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S26KS256SDABHV030.pdf
- Description:
- IC FLASH 256MBIT PAR 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:810
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Product details
Overview
S26KS256SDABHV030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 qualification.
For engineers reviewing the S26KS256SDABHV030 datasheet, S26KS256SDABHV030 pinout, S26KS256SDABHV030 application, or S26KS256SDABHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, configurable burst modes (16/32/64-byte wrapped or linear), deep power-down current (4 µA), and RSTO#/INT# interrupt signaling for real-time system control.
Technical Context
This device implements a synchronous DDR interface using differential clocking (CK/CK#) and center-aligned command/address with edge-aligned read data referenced to RWDS transitions. Its internal MIRRORBIT™ architecture enables parallel half-page access and simultaneous burst output while fetching next page, enabling sustained 333 MBps throughput.
The embedded algorithm controller (EAC) autonomously executes program/erase sequences-including 512-byte buffer programming (475 µs) and 256-KB sector erase (930 ms)-without host intervention. Volatile/non-volatile sector protection, 1024-byte one-time-programmable array, and ISO/TS16949-certified manufacturing support secure firmware storage in safety-critical systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256 Mb (32 MB) - fixed capacity for boot code and firmware storage in resource-constrained embedded hosts |
| Interface Standard | HYPERTBUS™ DDR - 8-bit bidirectional data bus with differential clock (CK/CK#) and RWDS strobe for precise read timing |
| Max Read Throughput | 333 MBps - achieved via dual-edge 8-bit transfers at 166 MHz, eliminating bottleneck vs. legacy parallel NOR |
| Random Access Time | 96 ns - initial latency for first word retrieval, enabling fast instruction fetch in MCU boot scenarios |
| Operating Temperature | –40°C to +105°C - Industrial Plus grade, qualified per AEC-Q100 Grade 2 for under-hood automotive ECUs |
| ECC Capability | 1-bit correction / 2-bit detection - hardware-implemented error handling for reliable long-term firmware integrity |
| Power Modes | Deep Power-Down: 4 µA - ultra-low standby current with 300 µs wake-up, ideal for battery-backed systems |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Reference for DDR command/address capture and read-data alignment; enables jitter-tolerant high-speed timing |
| DQ[7:0] | Bi-directional Data Bus | 8-bit DDR data path carrying commands, addresses, and 16-bit words on both clock edges |
| RWDS | Read Data Strobe Output | Source-synchronous strobe aligned to read data edges; used only during reads, not writes |
| CS# | Chip Select Input | Active-low enable for all transactions; deassertion terminates linear bursts and enters standby mode |
| RSTO# | Reset Output | Open-drain system-level power-on reset signal; user-configurable LOW pulse duration for sequenced boot |
| INT# | Interrupt Output | Active-low signal indicating Busy→Ready transition or ECC error detection event |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR Interface | Reduces pin count by >50% vs. parallel NOR while sustaining 333 MBps-enabling smaller PCB footprints and simplified routing |
| Configurable Burst Modes | Supports 16/32/64-byte wrapped bursts or linear bursts per transaction-optimizing cache line fill and DMA efficiency |
| Embedded Algorithm Controller (EAC) | Hardware-managed 512-byte buffer programming (475 µs) and 256-KB sector erase (930 ms)-offloading host CPU and ensuring deterministic timing |
| Advanced Sector Protection | Volatile lock bits and non-volatile OTP-based protection per 256-KB sector-preventing accidental firmware overwrite in field-deployed units |
| AEC-Q100 Grade 2 Qualification | Validated for –40°C to +105°C operation with 20-year data retention and 100,000 program/erase cycles-meeting ASIL-B functional safety requirements |
Applications
| Automotive Engine Control Unit (ECU) | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Storing boot firmware and calibration maps in diesel/gasoline engine controllers requiring rapid startup and high reliability under thermal stress. IC Role / Device Role / Timing Role: Primary non-volatile code storage with HYPERBUS™ DDR interface enabling sub-100 ns instruction fetch latency and deterministic boot timing. Use Value: AEC-Q100 Grade 2 qualification ensures operation at +105°C ambient; ECC and 20-year retention prevent field failures due to bit corruption or aging. | Use Scenario: Holding firmware and configuration data in programmable logic controllers deployed in factory automation environments with wide temperature swings. IC Role / Device Role / Timing Role: High-throughput NOR flash replacing parallel interfaces to reduce FPGA pin count and simplify PCB layout while maintaining fast code execution. Use Value: 333 MBps read bandwidth supports real-time firmware updates over EtherCAT; deep power-down mode (4 µA) extends backup battery life during maintenance outages. |
| Medical Imaging System Boot Memory | Avionics Display Processor Code Storage |
Use Scenario: Hosting boot loader and safety-critical diagnostic routines in portable ultrasound and MRI subsystems where data integrity is regulated. IC Role / Device Role / Timing Role: Secure, certified flash memory providing tamper-resistant storage with 1-bit ECC correction and OTP-based write protection. Use Value: ISO/TS16949 manufacturing and 100,000-cycle endurance ensure traceability and longevity required for FDA Class II medical device certification. | Use Scenario: Storing display firmware and graphics assets in DO-178C-compliant avionics displays operating in extended temperature zones of aircraft cabins. IC Role / Device Role / Timing Role: Low-latency, high-reliability code memory interfaced to ARM Cortex-A series processors via HYPERBUS™ controller IP. Use Value: 96 ns random access and 166 MHz DDR clock meet DO-254 timing closure requirements; RSTO# output synchronizes display initialization with main system reset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S26KS256SDABHV020 | Same density and package but rated for –40°C to +85°C (Industrial grade), no AEC-Q100 qualification | Targeted at commercial/industrial systems without automotive thermal or reliability requirements | Select when cost sensitivity outweighs extended temperature or automotive certification needs |
| S26KL256SDABHV030 | 256 Mb variant with 3.0 V I/O (vs. 1.8 V), single-ended clock (CK only), max 100 MHz clock rate (200 MBps) | Designed for legacy host controllers lacking differential clock support or 1.8 V I/O capability | Select when interfacing with older SoCs or FPGAs without HYPERBUS™ differential clock receivers |
Compared with S26KS256SDABHV020 and S26KL256SDABHV030, the S26KS256SDABHV030 uniquely combines AEC-Q100 Grade 2 qualification, 1.8 V differential-clock HYPERBUS™, and 333 MBps throughput-making it the only choice for thermally demanding automotive ADAS and powertrain applications requiring both speed and safety certification.
Availability
S26KS256SDABHV030 is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC firmware storage, medical imaging boot systems, and avionics display processors requiring stable component supply across extended lifecycle programs.
Supply support for S26KS256SDABHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.
The HYPERFLASH™ product line delivers high-speed, low-pin-count NOR flash memory optimized for real-time boot and firmware storage in safety-critical embedded systems using the standardized HYPERBUS™ interface.
FAQ
What voltage levels does S26KS256SDABHV030 support for VCC and VCCQ?
The device uses 1.8 V for both core (VCC) and I/O (VCCQ) supply rails. It is not compatible with 3.0 V I/O operation-only the S26KLxxxS variants support 3.0 V. The 1.8 V requirement enables lower power consumption and higher clock rates up to 166 MHz, consistent with its Industrial Plus temperature rating.
Does S26KS256SDABHV030 require external termination resistors for the differential clock lines?
Yes. Per the datasheet (Section 10, Hardware Interface), 100 Ω differential termination between CK and CK# is mandatory at the memory device side to maintain signal integrity at 166 MHz. The host-side termination is optional but recommended for longer traces or noisy environments to suppress reflections.
How is the RSTO# output configured for different reset pulse durations?
RSTO# pulse width is set via two non-volatile configuration bits (RSTO_WIDTH[1:0]) in the device's status register. Values 00b, 01b, 10b, and 11b correspond to 100 µs, 1 ms, 10 ms, and 100 ms LOW pulses respectively. Configuration is performed using the Write Configuration Register command (0x01) after unlocking protected registers.
Can S26KS256SDABHV030 be used in linear burst mode without pre-fetching overhead?
Yes. In linear burst mode, the device automatically initiates pre-fetch of the next sequential page during active burst output-enabling continuous 333 MBps throughput without host intervention or additional latency. This behavior is inherent to the MIRRORBIT™ architecture and requires no special command sequence beyond setting burst type in the read command.
S26KS256SDABHV030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- HYPERFLASH™ KS
- Package/Case:
- 24-VBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 256Mbit
- Memory Organization:
- 32M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 96 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S26KS256SDABHV030 FAQ
1.How can I place an order for S26KS256SDABHV030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KS256SDABHV030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KS256SDABHV030 reliable?
The price and inventory of S26KS256SDABHV030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS256SDABHV030 is usually 5 days.
3.What payment methods are accepted for S26KS256SDABHV030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS256SDABHV030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KS256SDABHV030?
S26KS256SDABHV030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KS256SDABHV030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KS256SDABHV030?
For technical support, including S26KS256SDABHV030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS256SDABHV030 requirements.
6.How does Aetrix verify that S26KS256SDABHV030 is sourced from the original manufacturer or authorized distributors?
All S26KS256SDABHV030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS256SDABHV030 meets industry standards.
7.What is the process for return or replacement of S26KS256SDABHV030?
All S26KS256SDABHV030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS256SDABHV030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KS256SDABHV030 part is unused and in its original packaging.
Return procedure for S26KS256SDABHV030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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