Cypress Semiconductor Corp S26KS256SDGBHM030

Overview

S26KS256SDGBHM030 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors and optional 4-KB parameter sectors, and operates across industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS256SDGBHM030 datasheet, S26KS256SDGBHM030 pinout, S26KS256SDGBHM030 application, or S26KS256SDGBHM030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns tACC), ECC 1-bit correction/2-bit detection, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive infotainment boot storage.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. The MIRRORBIT™ memory array enables 16-bit word-wide addressing and page-based access with half-page alignment on 16-byte boundaries.

HYPERBUS™ protocol uses center-aligned command/address and edge-aligned read data relative to RWDS transitions. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction, and DCARS (DDR Center Aligned Read Strobe) ensures precise timing alignment during high-speed reads at 166 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KS256SDGBHM030, the Cypress alternative trades automotive qualification and 1.8 V low-power operation for broader voltage compatibility, while the Winbond part sacrifices HYPERBUS™ bandwidth and timing precision for SPI simplicity and lower BOM cost.

Availability

S26KS256SDGBHM030 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS camera modules, industrial PLCs, and medical imaging systems requiring stable component supply, AEC-Q100 compliance, and high-throughput non-volatile code storage.

Supply support for S26KS256SDGBHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's HYPERFLASH™ product line, engineered specifically for high-speed, low-pin-count boot and code storage in automotive and industrial systems demanding deterministic timing and long-term reliability.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KS256SDGBHM030 requires 300 µs to exit Deep Power-Down mode and resume normal operation. During this period, CS# must remain HIGH and CK must be stable; no commands are accepted until the device signals readiness via INT# deassertion or internal status register polling.

Does this device support linear burst reads across page boundaries?

Yes - in linear burst mode, the device automatically fetches the next sequential page from the MIRRORBIT™ array while bursting out the current page, enabling continuous 333 MBps throughput without host intervention or address reprogramming between pages.

How is ECC handled during read operations?

ECC checking occurs transparently during every read access. If a 1-bit error is detected, it is corrected in real time and the corrected data is output; if a 2-bit error is detected, the INT# pin asserts and the status register flags the error - no data corruption occurs, but software must handle the unrecoverable condition.

Can RSTO# be disabled or repurposed?

No - RSTO# is a dedicated open-drain output that cannot be disabled or reassigned. Its LOW pulse duration is configurable via a non-volatile register (default 100 ms), and it asserts automatically after power-on reset or when triggered by specific command sequences, ensuring reliable system-level reset coordination.