Cypress Semiconductor Corp S26KS256SDPBHM020

Overview

S26KS256SDPBHM020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors and optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade).

For engineers reviewing the S26KS256SDPBHM020 datasheet, S26KS256SDPBHM020 pinout, S26KS256SDPBHM020 application, or S26KS256SDPBHM020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read latency (96 ns tACC), ECC 1-bit correction/2-bit detection, and FBGA-24 package compatibility with high-density embedded boot memory layouts.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfers, while Embedded Algorithm Controller (EAC) executes non-volatile programming/erase sequences autonomously. It uses MIRRORBIT™ technology for 16-bit word-wide addressing and page-aligned 32-byte random reads with configurable burst lengths (16/32/64 bytes).

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; RWDS output is edge-aligned to CK/CK# transitions during reads, and initial access latency ranges from 5–16 clock cycles depending on configuration. DCARS (DDR Center Aligned Read Strobe) ensures precise timing alignment between host and memory.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm (VAA024), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KS256SDPBHI020 and S26KL256SDPBHM020, the S26KS256SDPBHM020 uniquely combines 166 MHz DDR performance, 105°C operation, and differential clock robustness-making it optimal for thermally demanding, high-throughput embedded boot applications where timing margin and longevity are critical.

Availability

S26KS256SDPBHM020 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, 5G baseband units, and medical imaging systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KS256SDPBHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

This part belongs to the HYPERFLASH™ family - designed specifically to replace parallel NOR flash in high-performance embedded systems by delivering DDR-speed throughput with minimal pin count and robust reliability for mission-critical firmware storage.

FAQ

What is the purpose of the RWDS signal in S26KS256SDPBHM020?

RWDS (Read Data Strobe) is an output signal that indicates valid read data windows during HYPERBUS™ DDR read operations. It is edge-aligned to CK/CK# transitions and used exclusively for read timing synchronization - not for write operations. The host uses RWDS edges to sample DQ[7:0] data reliably at 166 MHz, ensuring accurate data capture despite signal skew.

Does S26KS256SDPBHM020 support in-system programming without external high voltage?

Yes. The device integrates an Embedded Algorithm Controller (EAC) that executes all program and erase operations autonomously using standard 1.8 V supply. No external VPP or high-voltage generator is required - commands are written to specific address locations, and the EAC handles voltage boosting, timing, and verification internally.

How does the 512-byte program buffer improve write efficiency?

The 512-byte write buffer allows up to 512 bytes of data to be loaded into an internal latch before initiating a single programming operation. This reduces per-byte overhead: buffer programming achieves ~1 MBps throughput versus 4 KBps for single-word writes, cutting total firmware update time by over 250× for typical 32 KB images.

Can S26KS256SDPBHM020 be used in place of legacy parallel NOR flash?

No direct drop-in replacement exists due to architectural differences: HYPERBUS™ uses multiplexed DDR signaling over 8 pins versus parallel NOR's 32+ pin wide bus. Successful migration requires host controller support for HYPERBUS™ protocol, RWDS timing, and command set - not just pin mapping. FPGA or SoC must implement HYPERBUS™ master logic.