Cypress Semiconductor Corp S26KS512SDGBHB030

Overview

S26KS512SDGBHB030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used for high-speed boot code storage in automotive ADAS controllers.

For engineers reviewing the S26KS512SDGBHB030 datasheet, S26KS512SDGBHB030 pinout, S26KS512SDGBHB030 application, or S26KS512SDGBHB030 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns tACC), sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with read data edge-aligned to RWDS transitions and clock edges referenced to CK/CK#. The embedded algorithm controller (EAC) manages all program/erase operations autonomously using internal command sequences-no external microcode required.

It uses MIRRORBIT™ architecture enabling 16-bit word-wide accesses on 16-byte-aligned boundaries, with initial random access requiring 5–16 clock cycles and burst modes configurable as wrapped (16/32/64 bytes) or linear. DCARS (DDR Center-Aligned Read Strobe) ensures precise timing alignment between host and memory during high-speed reads.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDHBHI10, this part adds AEC-Q100 Grade 3 qualification and extended temperature support; versus MX25L51245GZC, it delivers 6.6× higher read bandwidth and integrated ECC-critical for functional safety and real-time boot in automotive and medical systems.

Availability

S26KS512SDGBHB030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and telematics control units requiring stable component supply across extended product lifecycles.

Supply support for S26KS512SDGBHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count boot memory in automotive and industrial real-time systems requiring deterministic startup and long-term data integrity.

FAQ

What is the purpose of the RWDS signal in S26KS512SDGBHB030?

RWDS (Read Data Strobe) is an output signal synchronized to read data transitions on DQ[7:0]. Unlike a clock, it pulses only during active read bursts and aligns data edges-not clock edges-ensuring reliable capture under variable propagation delays. It is not used during write operations and cannot be disabled.

Does S26KS512SDGBHB030 support both 1.8 V and 3.0 V I/O operation?

No-S26KS512SDGBHB030 is a 1.8 V I/O variant only, indicated by the "S" suffix and differential CK/CK# signaling. The 3.0 V version (e.g., S26KS512SDGBHA030) uses single-ended CK and different timing parameters; mixing voltage variants risks interface failure.

How does the Embedded Algorithm Controller (EAC) affect firmware development?

The EAC executes erase and program operations autonomously after receiving host commands, eliminating the need for polling loops or timing-critical delay routines in driver code. Developers issue standard HYPERBUS™ commands and wait for INT# assertion or status register flags-reducing driver complexity and improving update reliability.

Can S26KS512SDGBHB030 be used in linear burst mode for continuous streaming applications?

Yes-linear burst mode enables uninterrupted sequential reads across page boundaries, with automatic prefetch of the next page during current burst output. This sustains 333 MBps throughput for large contiguous data blocks such as firmware images or video buffer loading in imaging subsystems.