Cypress Semiconductor Corp S26KS512SDGBHV030

Overview

S26KS512SDGBHV030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase and 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade). Used in high-performance boot code storage for automotive ADAS controllers.

For engineers reviewing the S26KS512SDGBHV030 datasheet, S26KS512SDGBHV030 pinout, S26KS512SDGBHV030 application, or S26KS512SDGBHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read latency (96 ns tACC), ECC 1-bit correction/2-bit detection capability, and FBGA-24 package compatibility with high-density PCB routing constraints.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes non-volatile program/erase operations autonomously. All command/address/data transfers occur over the same 8-bit DQ bus using DDR edge-aligned protocol.

It supports configurable burst modes-wrapped (16/32/64 bytes) or linear-with initial random access latency of 5–16 clock cycles and 96 ns tACC. RWDS output is strictly used as read-data strobe (not for write), synchronized to CK/CK# transitions during read bursts.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY14X108L-BAI and S26KL512SDHBV020, S26KS512SDGBHV030 uniquely combines 1.8 V DDR interface, 333 MBps throughput, and automotive-grade ECC - making it the only option for new ADAS platforms requiring both speed and functional safety.

Availability

S26KS512SDGBHV030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and 5G radio unit boot applications requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for S26KS512SDGBHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This part belongs to Infineon's HYPERFLASH™ family - designed specifically for replacing parallel NOR flash in bandwidth-constrained, safety-critical embedded systems where DDR interface efficiency and hardware ECC are mandatory.

FAQ

What is the purpose of the RWDS signal in S26KS512SDGBHV030?

RWDS is a read-data strobe output that indicates valid data windows on the DQ[7:0] bus during read operations only. It is edge-aligned to CK/CK# transitions and used by the host to sample data accurately. RWDS is not active during write operations, and its timing is defined in the HYPERBUS™ specification to ensure setup/hold margin in high-speed layouts.

Does S26KS512SDGBHV030 support both 1.8 V and 3.0 V I/O operation?

No - S26KS512SDGBHV030 is a 1.8 V I/O variant only, with differential CK/CK# and 12-signal HYPERBUS™ interface. The 3.0 V I/O version is a separate part number (e.g., S26KL512SDHBV020) with single-ended clock and 11-signal interface. Mixing voltages risks damage and violates absolute maximum ratings.

How does the 512-byte program buffer improve firmware update performance?

The internal 512-byte buffer allows up to 512 bytes to be loaded into cache before initiating a write, reducing per-byte overhead. Measured performance shows ~1 MBps effective programming rate - approximately twice as fast as single-word programming - significantly cutting OTA update time in automotive and industrial gateways.

Is RSTO# output configurable, and what is its default behavior?

Yes - RSTO# duration is user-configurable via non-volatile register bits. By default, it asserts a 100-ms LOW pulse after power-on reset, meeting typical SoC reset timing requirements. The pulse width can be adjusted to 10 ms, 100 ms, or 1 s depending on host processor specifications, and settings persist across power cycles.