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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Cypress Semiconductor Corp S26KS512SDPBHN020

Name: S26KS512SDPBHN020
Brand: Cypress Semiconductor Corp
SKU: S26KS512SDPBHN020
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: S26KS512SDPBHN020

Manufacturer:: Cypress Semiconductor Corp

Category:: Memory

Package:: 24-VBGA

Datasheet:: S26KS512SDPBHN020.pdf

Description:: IC FLASH 512MBIT PAR 24FBGA

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Product details

Overview

S26KS512SDPBHN020 from Infineon Technologies is a 512 Mb (64 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-qualified AEC-Q100 Grade 2.

For engineers reviewing the S26KS512SDPBHN020 datasheet, S26KS512SDPBHN020 pinout, S26KS512SDPBHN020 application, or S26KS512SDPBHN020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, configurable burst modes (16/32/64-byte wrapped or linear), deep power-down current (8 µA typ.), and FBGA-24 package compatibility with high-density MCU boot memory designs.

Technical Context

This device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate timing referenced to CK/CK#. RWDS output is edge-aligned to CK transitions during reads, enabling precise data capture at 166 MHz.

The embedded algorithm controller (EAC) autonomously executes program/erase sequences-including 512-byte buffer programming (475 µs) and 256-KB sector erase (930 ms)-while the host interface controller (HIC) handles real-time signal monitoring, burst transaction control, and RSTO#/INT# assertion for system-level reset and ECC interrupt signaling.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	512 Mb (64 MB) - supports full firmware images for high-end microcontrollers and ADAS domain controllers.
Interface Protocol	HYPERTBUS™ DDR - uses single 8-bit DQ bus for commands, addresses, and data with CK/CK# differential clocking.
Max Read Throughput	333 MBps - achieved via 166 MHz clock × 2 transfers/cycle × 1 byte per transfer, enabling fast boot and XIP execution.
Random Access Time	96 ns - initial latency of 5–16 clock cycles enables deterministic startup timing in safety-critical systems.
Erase Endurance	100,000 cycles - sufficient for field firmware updates in industrial gateways and automotive ECUs.
Data Retention	20 years - guaranteed at +105°C, meeting long-lifecycle requirements for automotive and infrastructure equipment.
Power Modes	Deep Power-Down: 8 µA (typ.) - allows ultra-low standby current without wake-up latency penalty.

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm (VAA024), RoHS-compliant, lead-free.

Pin/Terminal	Circuit Role	Design Meaning
CK / CK#	Differential clock input	Defines DDR timing reference; CK rising/falling edges sample DQ and RWDS; required for 166 MHz operation.
CS#	Chip select (active low)	Enables device communication; HIGH places device in standby or deep power-down mode.
RWDS	Read data strobe output	Indicates valid read data on DQ; edge-aligned to CK transitions; used only during read operations.
DQ[7:0]	Bi-directional data bus	Carries commands, addresses, and 8-bit data in DDR fashion; no separate address bus required.
INT#	Interrupt output	Asserted LOW on ECC error detection or busy-to-ready transition; connects directly to MCU interrupt pin.
RSTO#	Reset output	User-configurable LOW pulse for system power-on reset; driven after VCC stabilization and internal initialization.

Key Features

Feature	Design Value
HYPERBUS™ DDR Interface	Reduces pin count by 40% vs. parallel NOR; eliminates separate address bus while sustaining 333 MBps read speed.
Configurable Burst Mode	Supports 16/32/64-byte wrapped bursts or linear bursts-enables optimal cache line alignment for ARM Cortex-R/A series MCUs.
ECC & CRC Protection	1-bit correction / 2-bit detection + CRC on command/data transfers prevents silent corruption in safety-critical boot paths.
Advanced Sector Protection	Volatile and non-volatile lock bits per 256-KB sector allow selective firmware partitioning (e.g., bootloader vs. application).
Automotive Qualification	AEC-Q100 Grade 2 (–40°C to +105°C) and ISO/TS 16949 certified-qualified for powertrain and chassis control modules.

Applications

ADAS Domain Controller Boot Memory

Industrial PLC Firmware Storage

Use Scenario: Stores boot code and safety monitor firmware for radar/EPS ECUs requiring ASIL-B compliance.

IC Role / Device Role / Timing Role: Primary non-volatile boot memory interfaced to TI Jacinto or NXP S32G via HYPERBUS™ master controller.

Use Value: 96 ns random access and 333 MBps sequential read enable sub-100 ms cold boot; ECC ensures integrity of safety-critical vectors.

Use Scenario: Holds field-upgradable ladder logic and motion control firmware in modular automation controllers.

IC Role / Device Role / Timing Role: High-reliability firmware storage with 100K erase cycles and 20-year retention at 85°C ambient.

Use Value: Deep power-down (8 µA) extends battery backup runtime; sector protection isolates bootloader from user-programmed logic.

Automotive Infotainment Head Unit

5G Baseband Processor Code Storage

Use Scenario: Stores Linux kernel, GPU firmware, and UI assets in head units with thermal constraints up to +105°C.

IC Role / Device Role / Timing Role: XIP-capable HYPERFLASH™ memory mapped directly into ARM Cortex-A72 instruction space.

Use Value: Linear burst mode enables continuous instruction fetch at 333 MBps; RSTO# synchronizes SoC reset sequence.

Use Scenario: Hosts baseband stack and protocol stack binaries for mmWave 5G NR modems operating in compact enclosures.

IC Role / Device Role / Timing Role: Low-pin-count, high-bandwidth external code memory replacing quad-SPI or parallel NOR.

Use Value: 24-ball FBGA minimizes PCB area; 1.8 V I/O reduces signal integrity complexity vs. 3.0 V alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress S26KL512SDPBHN020	Same die, identical electrical specs and timing; rebranded pre-acquisition part-pin-, timing-, and software-compatible.	No functional difference; supported by same Infineon tools and documentation post-merger.	Select when sourcing legacy Cypress-designated BOMs or requiring continuity with prior design validation.
Winbond W74M512FVSSIQ	Octal SPI interface (not HYPERBUS™); 400 MHz clock, 400 MBps read; no RWDS or differential clock; requires different controller IP.	Used in cost-sensitive consumer IoT where pin count is less constrained than bandwidth; lacks AEC-Q100 Grade 2 rating.	Choose only if migrating from SPI-based architecture and accepting trade-offs in automotive qualification and deterministic latency.

Compared with S26KS512SDPBHN020, the Cypress rebrand offers zero-risk drop-in replacement, while Winbond's octal SPI alternative demands controller redesign and forfeits automotive temperature and ECC robustness-making it unsuitable for safety-critical deployments.

Availability

S26KS512SDPBHN020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial programmable logic controllers, infotainment head units, and 5G baseband processors requiring stable component supply, long-term lifecycle support, and AEC-Q100 compliance.

Supply support for S26KS512SDPBHN020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and secure microcontrollers, with global manufacturing and quality certification under ISO/TS 16949.

This part belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count boot and code storage in automotive and industrial real-time systems demanding deterministic latency and functional safety.

FAQ

What voltage levels does S26KS512SDPBHN020 support for core and I/O operation?

The device operates with 1.8 V VCC/VCCQ for both core and I/O functions. It is not rated for 3.0 V operation-only the S26KS512Sxxx010 variant supports 3.0 V I/O. This 1.8 V version ensures lower power consumption and improved signal integrity in high-speed DDR interfaces.

Does S26KS512SDPBHN020 require an external clock termination resistor?

Yes. The differential CK/CK# inputs require 100 Ω differential termination between pins, placed as close as possible to the device ball pads. This is specified in Infineon's layout guidelines (AN2299) to maintain signal integrity at 166 MHz and prevent read timing violations.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes of data in a single burst write, then internally programs them in ~475 µs. This reduces host overhead versus single-word programming (500 µs per 2 bytes) and enables efficient firmware patching with minimal CPU intervention.

Can RSTO# be disabled or configured as a general-purpose output?

No. RSTO# is a dedicated open-drain output with fixed functionality: it asserts LOW after power-on reset completion and releases HIGH once internal initialization finishes. Its pulse width is configurable via non-volatile register but cannot be repurposed as GPIO or disabled.

S26KS512SDPBHN020 Specifications

Product attributes: Attribute value

Manufacturer:: Cypress Semiconductor Corp

Series:: HYPERFLASH™ KS

Package/Case:: 24-VBGA

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NOR

Memory Size:: 512Mbit

Memory Organization:: 64M x 8

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 96 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 125°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 24-FBGA (6x8)

S26KS512SDPBHN020 FAQ

1.How can I place an order for S26KS512SDPBHN020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KS512SDPBHN020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KS512SDPBHN020 reliable?

The price and inventory of S26KS512SDPBHN020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS512SDPBHN020 is usually 5 days.

3.What payment methods are accepted for S26KS512SDPBHN020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS512SDPBHN020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26KS512SDPBHN020?

S26KS512SDPBHN020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KS512SDPBHN020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KS512SDPBHN020?

For technical support, including S26KS512SDPBHN020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS512SDPBHN020 requirements.

6.How does Aetrix verify that S26KS512SDPBHN020 is sourced from the original manufacturer or authorized distributors?

All S26KS512SDPBHN020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS512SDPBHN020 meets industry standards.

7.What is the process for return or replacement of S26KS512SDPBHN020?

All S26KS512SDPBHN020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS512SDPBHN020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KS512SDPBHN020 part is unused and in its original packaging.

Return procedure for S26KS512SDPBHN020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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