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Infineon Technologies S29GL512T13TFNV10
- Part No.:
- S29GL512T13TFNV10
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 56-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
S29GL512T13TFNV10.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 56TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,728
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Product details
Overview
S29GL512T13TFNV10 from Infineon Technologies is a 512 Mb (64 MB) parallel NOR flash memory IC with MIRRORBIT™ architecture, operating at 3.0 V core supply and supporting 1.65–3.6 V I/O voltage. It delivers 100 ns random access time, 15 ns page access time, and integrates hardware ECC for single-bit error correction. Used in boot code storage and firmware execution in industrial control systems.
For engineers reviewing the S29GL512T13TFNV10 datasheet, S29GL512T13TFNV10 pinout, S29GL512T13TFNV10 application, or S29GL512T13TFNV10 equivalent, key selection criteria include sector erase granularity (128 KB), OTP array size (2048 bytes), ASP protection modes, CFI compliance, and AEC-Q100 Grade 2 qualification for automotive embedded use.
Technical Context
This device implements an asynchronous parallel interface with ×8/×16 data bus configuration and supports byte/word boundary addressing only. Its embedded algorithm controller (EAC) manages all program/erase operations-including suspend/resume-and enforces command-based protection via status register and SSR lock mechanisms.
The flash array uses 45-nm MIRRORBIT™ technology to achieve 100,000 program/erase cycles and 20-year data retention. Internal hardware ECC operates transparently during read operations, correcting single-bit errors without software intervention or latency penalty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 512 Mb (64 MB) - sufficient for full firmware images and bootloader + RTOS in resource-constrained embedded hosts |
| Random access time (tACC) | 100 ns at –40°C to +85°C - enables direct XIP execution without external cache in real-time control loops |
| Page access time (tPACC) | 15 ns - accelerates sequential instruction fetch during boot or firmware update verification |
| Programming buffer | 512-byte write buffer - reduces effective programming time by batching up to 256 words per operation |
| Sector size | Uniform 128-KB sectors - simplifies partitioning for secure firmware updates and dual-bank OTA schemes |
| ECC capability | Internal single-bit error correction - eliminates need for external ECC logic or software overhead in safety-critical applications |
| OTP array | 2048-byte one-time programmable region with four lockable SSRs - supports secure key storage and device identity binding |
Pinout & Package
Package: 56-ball VBU fortified BGA (9 mm × 7 mm), RoHS-compliant, lead-free, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs | 22-bit address bus supporting full 512 Mb address space with byte/word alignment only |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; configurable as ×8 or ×16 mode via BYTE# signal |
| CE#, OE#, WE# | Chip Enable, Output Enable, Write Enable | Asynchronous control signals enabling standard SRAM-like read/write timing without clocks |
| RY/BY# | Ready/Busy output | Open-drain status indicator - low during embedded operations, used for polling instead of status register reads |
| VCC, VIO | Core and I/O supplies | Separate 3.0 V core (VCC) and 1.65–3.6 V I/O (VIO) rails - allows interfacing with mixed-voltage SoCs |
Key Features
| Feature | Design Value |
|---|---|
| Versatile I/O voltage range | VIO supports 1.65 V to VCC - enables direct connection to 1.8 V, 2.5 V, or 3.3 V host processors without level shifters |
| Advanced sector protection (ASP) | Volatile and non-volatile locking per 128-KB sector - prevents accidental firmware overwrite during field updates |
| Suspend/resume for program & erase | Interrupt long-running erase (up to 1 s) to service high-priority reads - critical for deterministic real-time response |
| Common Flash Interface (CFI) | Standardized parameter table accessible via read commands - enables automatic driver detection and configuration in Linux/U-Boot |
| AEC-Q100 Grade 2 qualification | Rated for –40°C to +105°C operation - validated for under-hood automotive ECUs requiring extended temperature reliability |
Applications
| Industrial PLC Firmware Storage | Automotive ADAS Boot Memory |
|---|---|
Use Scenario: Storing firmware and configuration data in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile boot memory providing XIP-capable instruction fetch with ≤100 ns latency to meet deterministic scan cycle deadlines. Use Value: Uniform 128-KB sectors enable atomic firmware updates; ASP prevents corruption during brown-out events common in industrial power grids. | Use Scenario: Hosting boot code and sensor calibration tables for radar processing units in advanced driver-assistance systems. IC Role / Device Role / Timing Role: AEC-Q100 Grade 2 qualified parallel NOR flash serving as primary boot device for SoCs requiring fast, reliable startup at –40°C to +105°C. Use Value: Hardware ECC ensures integrity of boot image under EMI-rich vehicle environments; OTP array secures cryptographic keys against cloning. |
| Medical Imaging System BIOS | Avionics Data Logger |
Use Scenario: Storing BIOS and diagnostic firmware in portable ultrasound and MRI control modules subject to strict regulatory traceability requirements. IC Role / Device Role / Timing Role: Secure, long-retention (20 years) firmware store with CFI support for automated driver initialization in FDA-cleared devices. Use Value: Four-lockable SSR regions allow segregation of calibration data, regulatory logs, and executable code - meeting IEC 62304 partitioning mandates. | Use Scenario: Recording flight-critical telemetry and system health metrics in airborne data acquisition units with extended thermal cycling exposure. IC Role / Device Role / Timing Role: High-endurance (100,000 cycles) flash memory supporting frequent log rotation and secure overwriting in DO-178C-certified platforms. Use Value: Suspend/resume capability allows uninterrupted logging during transient power dips; 128-KB sector erase enables rapid log archive cleanup without full device reformat. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel NOR flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S29GL512S13TFIV10 | Same density and package, but rated for Industrial (–40°C to +85°C) only - no AEC-Q100 qualification | Lacks automotive-grade reliability validation; unsuitable for under-hood deployment | Select when cost-sensitive industrial designs do not require extended temperature or automotive qualification |
| MX29GL512FPTI-90G | Micron part with identical 512 Mb density, 90 ns tACC, but no integrated ECC or OTP array | Requires external error handling and lacks secure key storage capability | Choose where legacy driver compatibility outweighs ECC and security features |
Compared with S29GL512S13TFIV10 and MX29GL512FPTI-90G, the S29GL512T13TFNV10 uniquely combines AEC-Q100 Grade 2 qualification, on-die ECC, and lockable OTP - making it the only option for safety-aware automotive boot memory requiring zero software ECC overhead and hardware-enforced key isolation.
Availability
S29GL512T13TFNV10 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system BIOS requiring stable component supply across extended lifecycle programs.
Supply support for S29GL512T13TFNV10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions for industrial and transportation markets.
The GL-T family targets embedded systems needing robust, high-density parallel NOR flash with XIP capability, ECC, and automotive qualification - bridging the gap between legacy SRAM-boot architectures and modern NAND-based systems.
FAQ
What is the maximum operating temperature range for S29GL512T13TFNV10?
The S29GL512T13TFNV10 is qualified for –40°C to +105°C operation and meets AEC-Q100 Grade 2 requirements. This rating is confirmed in the official Infineon datasheet Rev. *M, Section "Temperature range / grade", and applies to all electrical and timing specifications including 100 ns random access time and 100,000 program/erase cycles.
Does this device support both ×8 and ×16 data bus configurations?
Yes, the S29GL512T13TFNV10 supports configurable ×8 or ×16 operation via the BYTE# input signal. When BYTE# is low, the device operates in ×16 mode using DQ0–DQ15; when high, it operates in ×8 mode using DQ0–DQ7 only. This is defined in Section 8.3 "Word/Byte configuration" of the datasheet.
How does the internal ECC function during normal read operations?
The internal ECC operates transparently during every read access: single-bit errors in any 512-byte sector are automatically detected and corrected in hardware with no latency penalty or software involvement. The ECC engine is always active and requires no initialization or register setup - verified in Section 5.3 "Automatic ECC" of the datasheet.
Is the 2048-byte OTP array fully lockable per region?
The OTP array contains four 512-byte lockable regions (SSR0–SSR3). SSR0 is factory-locked and cannot be modified; SSR3 supports password-based read protection. SSR1 and SSR2 can be individually locked via status register bits. All lock states persist after power cycling and are irreversible - detailed in Section 2.5 "SSR ASO" and Section 3.3 "SSR (OTP)".
S29GL512T13TFNV10 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-T
- Package/Case:
- 56-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 60ns
- Access Time:
- 130 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 56-TSOP
S29GL512T13TFNV10 FAQ
1.How can I place an order for S29GL512T13TFNV10 through Aetrix?
Please submit a Request for Quotation (RFQ) for S29GL512T13TFNV10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S29GL512T13TFNV10 reliable?
The price and inventory of S29GL512T13TFNV10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S29GL512T13TFNV10 is usually 5 days.
3.What payment methods are accepted for S29GL512T13TFNV10?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S29GL512T13TFNV10 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S29GL512T13TFNV10?
S29GL512T13TFNV10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S29GL512T13TFNV10 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S29GL512T13TFNV10?
For technical support, including S29GL512T13TFNV10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S29GL512T13TFNV10 requirements.
6.How does Aetrix verify that S29GL512T13TFNV10 is sourced from the original manufacturer or authorized distributors?
All S29GL512T13TFNV10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S29GL512T13TFNV10 meets industry standards.
7.What is the process for return or replacement of S29GL512T13TFNV10?
All S29GL512T13TFNV10 units undergo pre-shipment inspection (PSI). If there is an issue with S29GL512T13TFNV10, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S29GL512T13TFNV10 part is unused and in its original packaging.
Return procedure for S29GL512T13TFNV10:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S29GL512T13TFNV10 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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Microchip Technology
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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