Infineon Technologies T1400N16H75VTXPSA1

Overview

T1400N16H75VTXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line commutation in industrial medium-voltage converters and soft starters. It delivers 1410 A average on-state current (TC = 85 °C), 1600 V repetitive peak off-state voltage, and 34 kA non-repetitive surge current capability, operating reliably across –40 °C to +125 °C junction temperature with two-sided forced cooling.

For engineers reviewing the T1400N16H75VTXPSA1 datasheet, T1400N16H75VTXPSA1 pinout, T1400N16H75VTXPSA1 application, or T1400N16H75VTXPSA1 equivalent, key selection criteria include clamping force range (14–26 kN), gate trigger current ≤250 mA, critical dv/dt rating (1000 V/µs), and thermal resistance (R_thJC = 17.0 K/kW, two-sided cooling).

Technical Context

This thyristor employs a pressure-contact silicon pellet structure optimized for line-frequency (50/60 Hz) phase-angle control in high-current rectification and motor drive systems. Its design supports bidirectional blocking up to 1600 V and withstands transient overvoltages up to 1700 V reverse surge.

It features gate-controlled turn-on with latching current ≤2500 mA and holding current ≤500 mA, enabling robust triggering under noisy industrial conditions. The device requires precise mechanical clamping and heatsink interface management due to its 75 mm diameter, 26.5 mm height, and dual-sided thermal path architecture.

Key Specifications

Pinout & Package

Package: Press-pack, double-sided cooled, 75 mm diameter disc-type housing with auxiliary cathode terminal. Requires controlled clamping force (14–26 kN) and flat, conductive heatsink surfaces.

Key Features

Applications

Availability

T1400N16H75VTXPSA1 is available at Aetrix Electronics and suitable for medium voltage converters, motor soft starters, and industrial drive rectifiers requiring stable component supply, long-life mechanical integrity, and traceable high-current semiconductor sourcing.

Supply support for T1400N16H75VTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This thyristor belongs to Infineon's "Netz-Thyristor" series, engineered specifically for high-reliability, high-current phase control in utility-grade and heavy industrial AC power systems.

FAQ

What is the required clamping force for T1400N16H75VTXPSA1 installation?

The device requires a mechanical clamping force between 14 kN and 26 kN to ensure optimal thermal contact and electrical conductivity across the pressure-contact silicon pellet. Under-torque risks thermal runaway; over-torque may fracture the ceramic housing or deform terminals. Force must be applied uniformly using calibrated torque tools per Infineon's mounting guidelines.

Can T1400N16H75VTXPSA1 be used in single-sided cooled configurations?

Yes, but with significant derating: R_thJC increases to 35.7 K/kW (anode-cooled) or 36.5 K/kW (cathode-cooled), reducing maximum I_TAVM by ~30% at TC = 85 °C. Two-sided cooling is strongly recommended to achieve the rated 1410 A and maintain thermal stability under continuous load.

What gate drive circuit parameters are mandatory for reliable triggering?

A minimum gate trigger current of 250 mA (at 2 V, 25 °C) must be delivered within a 20 µs pulse width. The gate circuit must limit peak power to ≤60 W (0.5 ms pulse) and provide low-inductance routing (<50 nH) to prevent false turn-on from dv/dt coupling. Auxiliary cathode (pin 5) must be tied directly to gate return.

How does T1400N16H75VTXPSA1 differ from standard TO-247 or D²PAK thyristors?

Unlike plastic-packaged thyristors, this press-pack device has no bond wires or epoxy encapsulation-enabling higher current density, superior thermal cycling endurance, and direct metal-to-heatsink conduction. Its 75 mm diameter and dual-terminal cathode support modular stacking and parallel operation in MV systems where discrete packages cannot meet voltage or lifetime requirements.