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Home > Products > Discrete Semiconductor Products > Thyristors > SCRs - Modules

Infineon Technologies T1901N80TOHXPSA1

Name: T1901N80TOHXPSA1
Brand: Infineon Technologies
SKU: T1901N80TOHXPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: T1901N80TOHXPSA1

Manufacturer:: Infineon Technologies

Category:: SCRs - Modules

Package:: TO-200AF

Datasheet:: T1901N80TOHXPSA1.pdf

Description:: SCR MODULE 8000V 3300A DO200AE

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Product details

Overview

T1901N80TOHXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power, line-commutated converter applications. It delivers V_DRM/V_RRM = 8000 V, I_TAVM = 2100 A (T_C = 85°C), and I_TSM = 67 kA (10 ms), with v_T0 = 1.24 V and r_T = 0.44 mΩ. It is used in HVDC transmission valves and static var compensators requiring robust blocking and surge capability.

For engineers reviewing the T1901N80TOHXPSA1 datasheet, T1901N80TOHXPSA1 pinout, T1901N80TOHXPSA1 application, or T1901N80TOHXPSA1 equivalent, key selection criteria include repetitive peak voltage rating, RMS current derating at elevated case temperature, clamping force range (63–91 kN), transient thermal impedance profile, and gate trigger sensitivity under high junction temperature.

Technical Context

This thyristor operates as a line-commutated, gate-controlled power switch in high-voltage, high-current AC/DC conversion systems. Its design supports forced commutation via external circuitry and relies on natural current zero-crossing for turn-off - not self-commutated like IGBTs or MOSFETs.

It features a pressure-contact silicon pellet construction with dual-sided cooling capability, enabling R_thJC = 5.0 K/kW (two-sided, DC). Critical dynamic parameters include (di/dt)_cr = 300 A/µs and (dv/dt)_cr = 2000 V/µs, ensuring reliable triggering and immunity to false turn-on in noisy medium-voltage environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DRM/V_RRM	8000 V - maximum repetitive peak forward/reverse blocking voltage, enabling use in 6.6 kV+ AC systems and ±320 kV HVDC valve stacks.
I_TAVM	2100 A at T_C = 85°C - average on-state current rating defining continuous conduction capability with specified heatsink interface.
I_TSM	67000 A (10 ms) - surge current rating determining short-circuit withstand in faulted grid conditions or inverter commutation failure.
v_T0, r_T	1.24 V / 0.44 mΩ - threshold voltage and slope resistance defining on-state conduction loss profile up to 5000 A.
(di/dt)_cr	300 A/µs - minimum required rate of rise of on-state current to ensure reliable turn-on without localized hot-spot formation.
R_thJC	5.0 K/kW (two-sided, DC) - junction-to-case thermal resistance used to calculate maximum allowable power dissipation for thermal design.
Clamping Force	63–91 kN - mechanical compression range required to maintain low contact resistance and thermal interface integrity across operating life.

Pinout & Package

Package: Press-pack, double-sided cooled, disc-type thyristor with anode/cathode main terminals and isolated gate/cathode control terminals. Diameter: 151.5 mm; contact diameter: 100 mm; height: 35 mm; weight: ~3200 g.

Pin/Terminal	Circuit Role	Design Meaning
Anode (1)	Main current terminal (positive conduction path)	High-current, high-voltage terminal rated for 8 kV blocking and 67 kA surge; requires symmetric mechanical clamping.
Cathode (2)	Main current terminal (negative conduction path)	Paired with anode for bidirectional heat extraction; forms primary conduction loop with gate-triggered latching action.
Gate (4)	Control input for turn-on initiation	Low-energy trigger terminal (I_GT ≤ 350 mA, V_GT ≤ 2.5 V); electrically isolated to prevent dv/dt-induced false firing.
Hilfskathode (5)	Control cathode reference	Dedicated cathode connection for gate drive return path, decoupling control loop from main current return noise.

Key Features

Feature	Design Value
Full 50/60 Hz blocking over -40°C to +125°C	Ensures stable operation across industrial ambient and junction temperature extremes without derating loss.
High DC blocking stability	Maintains V_RRM integrity under prolonged reverse bias, critical for HVDC smoothing reactor interfaces.
67 kA surge current capability (10 ms)	Withstands grid fault currents and inverter short-circuit transients without destructive latch-up or thermal runaway.
2000 V/µs critical dv/dt rating	Prevents spurious turn-on during fast voltage transients in series-stacked valve modules with snubberless designs.
Pressure-contact Si pellet construction	Enables replaceable, field-serviceable assembly with repeatable thermal and electrical contact performance under high clamping load.

Applications

High Voltage Direct Current Transmission (HVDC)

Static Var Compensation (SVC)

Use Scenario: Used in 12-pulse or 24-pulse thyristor valve stacks converting AC grid to ±320 kV DC for long-distance bulk power transfer.

IC Role / Device Role / Timing Role: Line-commutated switching element triggered synchronously with AC phase angle to regulate DC output voltage and reactive power flow.

Use Value: 8000 V blocking enables fewer series devices per valve arm, reducing complexity and improving reliability in multi-MW converters.

Use Scenario: Integrated into thyristor-switched capacitor (TSC) and thyristor-controlled reactor (TCR) banks for dynamic reactive power injection in substations.

IC Role / Device Role / Timing Role: Phase-angle controlled conduction device modulating fundamental current to absorb or generate VARs in real time.

Use Value: 300 A/µs di/dt capability ensures precise firing at low conduction angles without misfiring, enabling sub-cycle VAR response.

Medium Voltage Drives

Load Commutated Inverters (LCI)

Use Scenario: Employed in cycloconverter-based drives for large synchronous motors in mining, marine propulsion, and cement mills (4.16–13.8 kV).

IC Role / Device Role / Timing Role: Bidirectional AC line switch in direct frequency conversion topology, conducting both positive and negative half-cycles.

Use Value: Dual-sided cooling and 5.0 K/kW R_thJC support continuous 2100 A operation with forced-air or liquid-cooled heatsinks.

Use Scenario: Core switching device in LCI-fed synchronous motor drives where commutation is achieved by load back-EMF reversal.

IC Role / Device Role / Timing Role: Controlled rectifier/inverter stage relying on natural current zero crossing and load-induced commutation timing.

Use Value: 550 µs typical turn-off time (t_q) aligns with motor inductance time constants, enabling stable commutation without auxiliary circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TT1901N80KOF	V_DRM/V_RRM = 8000 V, I_TAVM = 2100 A, but uses single-sided cooling (R_thJC = 9.0 K/kW) and lower clamping force (50–75 kN).	Suitable for space-constrained, anode-cooled installations where cathode-side access is limited.	Select when mechanical mounting favors unidirectional heat extraction and lower assembly force is acceptable.
ST1901N80TOF	Same voltage/current ratings but includes integrated temperature sensor and enhanced dv/dt immunity (2500 V/µs); R_thJC = 4.8 K/kW (two-sided).	Preferred for new-build HVDC projects requiring predictive thermal monitoring and higher EMI resilience.	Choose when digital monitoring integration and extended dv/dt margin justify premium cost and qualification cycle.

Compared with TT1901N80KOF and ST1901N80TOF, T1901N80TOHXPSA1 offers balanced two-sided thermal performance and industry-standard clamping range, making it optimal for retrofitting legacy valve stacks and standard SVC deployments where proven field reliability is prioritized over added sensing or marginal dv/dt gain.

Availability

T1901N80TOHXPSA1 is available at Aetrix Electronics and suitable for high-voltage direct current transmission, static var compensation, and medium-voltage drive systems requiring stable component supply, long-life mechanical integrity, and traceable manufacturing history.

Supply support for T1901N80TOHXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for utility-scale power conversion where ultra-high voltage blocking, surge resilience, and long-term pressure-contact reliability are non-negotiable.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The maximum junction temperature (T_{vj max}) is 125°C, validated under steady-state conditions with T_C = 85°C and full-rated I_TAVM. Operation beyond this limit risks irreversible degradation of the silicon pellet's blocking capability and accelerated aging of the pressure-contact interface.

Does T1901N80TOHXPSA1 require a snubber circuit for dv/dt protection?

No snubber is required for normal operation due to its 2000 V/µs critical dv/dt rating. However, in valve stacks with mismatched device turn-off times or high stray inductance, a small RC network may be added to suppress oscillatory transients during commutation, especially in LCI topologies.

How is gate triggering implemented in practical HVDC valve designs?

Gate signals are delivered via fiber-optic isolated drivers synchronized to AC phase angle, with pulse width ≥ 20 µs and peak current ≥ 3 A to ensure latching under worst-case v_T and T_vj. The Hilfskathode (terminal 5) provides a dedicated low-inductance return path to minimize ground-loop noise coupling into the trigger circuit.

Can this thyristor be used in series-string configurations without active voltage balancing?

No. While matched static V_DRM tolerance exists, dynamic voltage sharing during transients requires passive RC snubbers or active gate control to equalize dv/dt stress. Series strings must include voltage-sharing networks and individual gate timing calibration to prevent overstress of any single device.

T1901N80TOHXPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-200AF

Packaging:: Tray

Product Status:: Active

Structure:: Single

Number of SCRs, Diodes:: 1 SCR

Voltage - Off State:: 8 kV

Current - On State (It (AV)) (Max):: 2930 A

Current - On State (It (RMS)) (Max):: 3300 A

Voltage - Gate Trigger (Vgt) (Max):: 2.5 V

Current - Gate Trigger (Igt) (Max):: 350 mA

Current - Non Rep. Surge 50, 60Hz (Itsm):: 67000A @ 50Hz

Current - Hold (Ih) (Max):: 350 mA

Operating Temperature:: -40°C ~ 125°C

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

T1901N80TOHXPSA1 FAQ

1.How can I place an order for T1901N80TOHXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for T1901N80TOHXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T1901N80TOHXPSA1 reliable?

The price and inventory of T1901N80TOHXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T1901N80TOHXPSA1 is usually 5 days.

3.What payment methods are accepted for T1901N80TOHXPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T1901N80TOHXPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T1901N80TOHXPSA1?

T1901N80TOHXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T1901N80TOHXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T1901N80TOHXPSA1?

For technical support, including T1901N80TOHXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T1901N80TOHXPSA1 requirements.

6.How does Aetrix verify that T1901N80TOHXPSA1 is sourced from the original manufacturer or authorized distributors?

All T1901N80TOHXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T1901N80TOHXPSA1 meets industry standards.

7.What is the process for return or replacement of T1901N80TOHXPSA1?

All T1901N80TOHXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T1901N80TOHXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T1901N80TOHXPSA1 part is unused and in its original packaging.

Return procedure for T1901N80TOHXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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