Infineon Technologies T1930N32TOFVTXPSA1

Overview

T1930N32TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for line-frequency AC power regulation in industrial rectifiers and medium-voltage motor drives. It delivers 3200 V repetitive peak off-state voltage (VDRM/VRRM), 4200 A RMS on-state current (ITRMS), and 40 kA non-repetitive surge current (ITSM) at 10 ms, operating up to 125 °C junction temperature in two-sided cooled configurations.

For engineers reviewing the T1930N32TOFVTXPSA1 datasheet, T1930N32TOFVTXPSA1 pinout, T1930N32TOFVTXPSA1 application, or T1930N32TOFVTXPSA1 equivalent, key selection criteria include gate trigger current (≤300 mA), critical dv/dt rating (1000 V/µs), thermal resistance (0.0078 °C/W, two-sided), and latching current (1500 mA) under standard test conditions.

Technical Context

This thyristor employs a pressure-contact silicon pellet structure with dual cathode terminals (main cathode + auxiliary cathode) and flat gate control, enabling robust commutation in forced- and natural-commutated phase-controlled converters. Its 150 A/µs critical di/dt and 1000 V/µs critical dv/dt support reliable turn-on under high dv/dt transients and fast current rise in high-inductance AC line applications.

The device operates in half-wave or full-wave controlled rectifier topologies with sinusoidal or rectangular conduction angles (30°–180°), where its on-state voltage (1.60 V at 2 kA, 2.90 V at 8 kA) and slope resistance (0.20 mΩ) directly determine conduction losses and thermal design margins for heatsink sizing.

Key Specifications

Pinout & Package

Package: Press-pack, two-sided cooled, Si-pellet with pressure contact, clamping force 42–95 kN, weight ≈1200 g, creepage distance 25 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with T1930N32TOFVTXPSA1, the PSA2 variant extends thermal operating range while maintaining pin-and-thermal compatibility, whereas TT1930N32KOF offers improved gate sensitivity and thermal consistency-both require validation of gate drive timing and snubber design against original layout.

Availability

T1930N32TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial medium-voltage rectifiers, DC motor drive power stages, static VAR compensators, and high-power induction heating inverters requiring stable component supply across multi-year production cycles.

Supply support for T1930N32TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's "Netz-Thyristor" high-power phase-control thyristor product line, engineered for ruggedized AC line power conversion in industrial energy systems where reliability under high dv/dt, high di/dt, and elevated temperature is mandatory.

FAQ

What is the recommended gate drive circuit for T1930N32TOFVTXPSA1?

A pulse transformer-based gate driver delivering ≥1.6 A peak gate current with <3 µs delay (tgd) and ≥60 W peak gate power (PGM) for 0.5 ms is recommended. The gate must be driven with a sharp-edged pulse (diG/dt ≥ 1.6 A/µs) to ensure reliable turn-on at full temperature; auxiliary cathode connection must be included to minimize loop inductance.

Can T1930N32TOFVTXPSA1 be used in forced-commutated inverters?

Yes, but only in line-commutated or hybrid topologies where natural AC voltage reversal provides turn-off. Its 450 µs typical turn-off time (tq) and lack of gate turn-off capability preclude use in fully self-commutated (GTO/GCT-like) inverters; it is not rated for active gate-controlled commutation.

What is the significance of the "F" and "O" letters in the part number T1930N32TOFVTXPSA1?

The "F" denotes the 5th letter specifying critical dv/dt rating (1000 V/µs), and the "O" is the 4th letter indicating circuit-commutated turn-off time (tq = 450 µs typ). These letters encode key performance parameters defined in Infineon's thyristor coding system and are essential for cross-reference and replacement verification.

How does two-sided cooling affect thermal design compared to single-sided?

Two-sided cooling reduces RthJC to 0.0078 °C/W versus 0.0152 °C/W (anode-only) or 0.0183 °C/W (cathode-only), lowering junction temperature by ~45 °C at 3000 A ITRMS. This allows either higher current density or relaxed heatsink requirements, but demands precise parallel mounting force (42–95 kN) and matched thermal interface materials on both sides.