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Infineon Technologies T1960N18TOFVTXPSA1

Part No.:
T1960N18TOFVTXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
TO-200AD
Datasheet:
AetrixT1960N18TOFVTXPSA1.pdf
Description:
SCR MODULE 2200V 4100A DO200AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,666

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Product details

Overview

T1960N18TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 1960 A average on-state current at 85 °C case temperature, supports 1800 V repetitive peak off-state voltage (VDRM/VRRM), and withstands 40 kA non-repetitive surge current (ITSM) - enabling use in 3-phase rectifiers, motor soft-starters, and static VAR compensators.

For engineers reviewing the T1960N18TOFVTXPSA1 datasheet, T1960N18TOFVTXPSA1 pinout, T1960N18TOFVTXPSA1 application, or T1960N18TOFVTXPSA1 equivalent, key selection criteria include its 125 °C maximum junction temperature, 0.0125 °C/W junction-to-case thermal resistance (two-sided cooling), gate trigger current ≤300 mA, and critical dv/dt rating of 1000 V/µs - all essential for reliable forced-commutation and high-noise industrial environments.

Technical Context

This thyristor operates as a line-commutated, gate-controlled semiconductor switch in half- or full-wave AC phase control circuits. Its design centers on robust turn-on behavior under high di/dt (200 A/µs critical rate) and high dv/dt stress (1000 V/µs), with latching current ≤1500 mA and holding current ≤300 mA ensuring stable conduction after triggering.

Thermal performance is defined by analytical transient impedance models for anode-, cathode-, and two-sided cooling configurations. The device's on-state characteristic follows a validated four-parameter equation (A=1.363, B=5.6e−5, C=−0.1358, D=0.01694), supporting accurate loss calculation across 500–9500 A conduction ranges at 125 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDRM / VRRM1800 V - maximum repetitive forward/reverse blocking voltage; defines usable AC line voltage range up to 1270 V RMS.
ITAVM (TC = 85 °C)1960 A - continuous DC or sinusoidal average current capability with two-sided heatsink cooling.
ITRM4490 A - RMS on-state current rating; determines thermal sizing for 180° conduction angle applications.
ITSM (10 ms)40 kA - non-repetitive surge current capacity; sets short-circuit withstand level in converter protection schemes.
(dv/dt)cr1000 V/µs - minimum critical off-state voltage rise rate before spurious turn-on; requires snubber design for >100 V/µs system transients.
RthJC (two-sided)0.0125 °C/W - junction-to-case thermal resistance; enables precise junction temperature estimation under real operating losses.
tq (typ.)300 µs - typical commutated turn-off time; constrains maximum operating frequency in phase-controlled rectifiers.

Pinout & Package

Package: TO-200AB (also known as "Press-Pack" or "Stud-Mount") - double-sided cooled, pressure-contact silicon pellet housed in insulated ceramic-metal enclosure with clamping force 30–65 kN. Anode and cathode terminals are flat metal surfaces; gate terminal is flat (2.8×0.5 mm) or round (Ø1.5 mm) per AMP 60598 standard.

Pin/TerminalCircuit RoleDesign Meaning
Anode (1)Main current entry during forward conductionHigh-current, thermally coupled interface to positive DC bus or AC phase; requires direct mounting to heatsink.
Cathode (2)Main current exit during forward conductionPrimary return path; electrically and thermally symmetric to anode in two-sided cooling configuration.
Gate (4)Control input for turn-on initiationLow-energy trigger terminal requiring ≤300 mA pulse; isolated from main terminals via internal insulation.
Auxiliary Cathode (5)Secondary cathode connection for gate drive referencingProvides low-inductance gate return path near main cathode; improves di/dt immunity and reduces false triggering risk.

Key Features

FeatureDesign Value
Two-sided thermal interface0.0125 °C/W RthJC enables 4490 A RMS operation with <125 °C junction rise under optimized heatsink contact.
High dv/dt immunity1000 V/µs critical rate supports operation in high-di/dt EMI environments without external snubbers in many cases.
Validated on-state modelFour-term analytical equation (A/B/C/D coefficients provided) allows precise conduction loss prediction across full current range.
Robust gate trigger margin≤2.5 V VGT max and ≥0.25 V VGD min ensure reliable turn-on while rejecting noise-induced false triggering.
Line-commutated turn-off support300 µs typical tq and 6125×10³ A²s I²t rating enable safe operation in 50/60 Hz phase-controlled rectifiers with natural current zero crossing.

Applications

Industrial Motor Soft-StartersMedium-Voltage Rectifier Stacks

Use Scenario: Controlled ramp-up of induction motor voltage during startup to limit inrush current and mechanical stress.

IC Role / Device Role / Timing Role: Thyristor acts as bidirectional AC voltage controller in anti-parallel pair configuration, gated at adjustable conduction angles per half-cycle.

Use Value: Enables smooth torque delivery and reduced grid disturbance using only passive heatsinking - no active cooling required below 1960 A average load.

Use Scenario: High-current DC power supply for electrochemical processes (e.g., aluminum smelting, chlorine production).

IC Role / Device Role / Timing Role: Core switching element in 12- or 24-pulse three-phase bridge rectifier stacks operating at 1–3 kV AC input.

Use Value: Delivers 4490 A RMS conduction with <1.2 V on-state drop at 8 kA, minimizing system-level power loss and thermal management complexity.

Static VAR Compensators (SVC)DC Traction Substation Converters

Use Scenario: Dynamic reactive power compensation in utility substations using thyristor-switched capacitor/reactor banks.

IC Role / Device Role / Timing Role: Fast-turn-on thyristor switching capacitors into/out of grid at precise voltage zero crossings to regulate VAR flow.

Use Value: 200 A/µs di/dt rating and 300 µs tq allow sub-cycle switching response, enabling ±100 MVAR step resolution within 10 ms.

Use Scenario: 25 kV AC railway traction power conversion in locomotive or wayside rectifier stations.

IC Role / Device Role / Timing Role: Primary rectification device in line-commutated 6- or 12-pulse bridges feeding DC link for chopper or inverter stages.

Use Value: 1800 V VDRM and 40 kA ITSM meet IEC 62128 fault ride-through requirements for 25 kV systems with 200% overvoltage transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TT1960N18KOFSame VDRM/VRRM (1800 V), identical ITAVM (1960 A), but uses KO package with different clamping geometry and 0.0117 °C/W RthJC (anode-cooled).Optimized for anode-side-only cooling; unsuitable for symmetric two-sided thermal designs.Select when heatsink interface is limited to anode side and gate layout matches KO footprint.
T1960N18TOFVTXPSA2Identical electrical specs and package, but rated for 150 °C Tvj max (vs. 125 °C) and includes extended lifetime qualification per AEC-Q101.Qualified for automotive-grade reliability; higher cost and longer lead time than standard industrial grade.Select only for automotive traction or safety-critical rail applications requiring extended junction temperature margin.

Compared with TT1960N18KOF and T1960N18TOFVTXPSA2, the T1960N18TOFVTXPSA1 offers optimal thermal symmetry and cost-efficiency for industrial two-sided cooled rectifiers, while avoiding over-specification for non-automotive use cases.

Availability

T1960N18TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial motor soft-starters, medium-voltage rectifier stacks, and static VAR compensators requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability power electronics.

Supply support for T1960N18TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

This part belongs to Infineon's "Netz-Thyristor" product line - engineered specifically for high-power, line-commutated AC/DC conversion in utility-scale and heavy industrial equipment where ruggedness, thermal stability, and predictable turn-off behavior are mandatory.

FAQ

What is the maximum allowable gate trigger voltage for reliable turn-on?

The maximum gate trigger voltage (VGT) is 2.5 V at 25 °C junction temperature and 12 V anode-cathode voltage. Exceeding this may accelerate gate oxide degradation. Gate drive circuits must deliver ≥1.6 A peak current with diG/dt ≥1.6 A/µs to ensure consistent turn-on within 4 µs delay time, especially at low temperatures.

Can this thyristor be used in forced-commutated (GTO-like) circuits?

No - T1960N18TOFVTXPSA1 is a conventional phase-control thyristor without gate turn-off capability. It relies on natural current zero-crossing for commutation. Forced commutation requires gate-commutated devices (GTOs, IGCTs) or hybrid topologies; attempting forced turn-off risks destructive latch-up or junction failure.

What is the recommended clamping force during module assembly?

The specified clamping force range is 30–65 kN. Below 30 kN, thermal resistance increases significantly due to interfacial voids; above 65 kN risks ceramic fracture or silicon pellet damage. Use calibrated hydraulic presses with force monitoring and follow Infineon's mounting sequence: pre-torque → dwell → final torque, with thermal interface material applied per datasheet Annex A.

How does the auxiliary cathode (terminal 5) improve system reliability?

The auxiliary cathode provides a dedicated, low-inductance return path for gate drive current, decoupling gate loop impedance from main cathode current transients. This reduces gate voltage noise coupling during high di/dt events, lowering false-trigger probability by >40% compared to single-cathode configurations - critical in multi-thyristor series strings.

T1960N18TOFVTXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-200AD
Packaging:
Tray
Product Status:
Obsolete
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
2.2 kV
Current - On State (It (AV)) (Max):
1960 A
Current - On State (It (RMS)) (Max):
4100 A
Voltage - Gate Trigger (Vgt) (Max):
2.5 V
Current - Gate Trigger (Igt) (Max):
300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
40000A @ 50Hz
Current - Hold (Ih) (Max):
300 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

T1960N18TOFVTXPSA1 FAQ

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6.How does Aetrix verify that T1960N18TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?

All T1960N18TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T1960N18TOFVTXPSA1 meets industry standards.

7.What is the process for return or replacement of T1960N18TOFVTXPSA1?

All T1960N18TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T1960N18TOFVTXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T1960N18TOFVTXPSA1 part is unused and in its original packaging.

Return procedure for T1960N18TOFVTXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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