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Infineon Technologies T1960N20TOFVTXPSA1
- Part No.:
- T1960N20TOFVTXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- SCRs - Modules
- Package:
- TO-200AD
- Datasheet:
-
T1960N20TOFVTXPSA1.pdf
- Description:
- SCR MODULE 2200V 4100A DO200AD
- Quantity:
- Payment:
- Shipping:
Inventory:3,713
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Product details
Overview
T1960N20TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 1960 A average on-state current at 85 °C case temperature, 2000 V repetitive peak off-state voltage (VDRM/VRRM), and supports 40 kA non-repetitive surge current (ITSM) - enabling robust operation in traction rectifiers, static VAR compensators, and DC motor drives.
For engineers reviewing the T1960N20TOFVTXPSA1 datasheet, T1960N20TOFVTXPSA1 pinout, T1960N20TOFVTXPSA1 application, or T1960N20TOFVTXPSA1 equivalent, key selection criteria include its 125 °C maximum junction temperature, 0.0125 °C/W junction-to-case thermal resistance (two-sided cooling), critical dv/dt rating of 1000 V/µs, and gate trigger current ≤300 mA - all essential for reliable forced-commutation and high-noise industrial environments.
Technical Context
This thyristor operates as a line-commutated, gate-controlled semiconductor switch in half- or full-wave AC phase control topologies. Its design centers on high di/dt immunity (200 A/µs critical rate of rise of on-state current) and high dv/dt blocking capability (1000 V/µs), ensuring stable turn-on under fast-rising voltage transients and preventing false triggering in high-inductance loads.
It features a pressure-contact silicon pellet construction with dual cooling interfaces (anode and cathode), enabling flexible mounting in dual-sided heatsink configurations. The device's on-state characteristic follows a defined polynomial equation (A=1.363, B=5.6e−5, C=−0.1358, D=0.01694) across 500–9500 A, supporting precise conduction loss modeling in thermal design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDRM / VRRM | 2000 V - Maximum repetitive forward/reverse blocking voltage; defines usable AC line voltage range up to 1414 V RMS. |
| ITAVM (TC = 85 °C) | 1960 A - Continuous average on-state current at rated case temperature; sets baseline thermal design for steady-state conduction. |
| ITRM S | 4490 A - RMS on-state current rating; used for thermal sizing under sinusoidal or rectangular load currents. |
| ITSM (tP = 10 ms) | 40000 A - Non-repetitive surge current capacity; determines short-circuit withstand capability in fault conditions. |
| (dv/dt)cr | 1000 V/µs - Minimum critical rate of rise of off-state voltage; ensures immunity to voltage transients without spurious turn-on. |
| RthJC (two-sided) | 0.0125 °C/W - Junction-to-case thermal resistance; enables accurate junction temperature prediction with dual-surface heatsinking. |
| tq (typ.) | 300 µs - Typical circuit commutated turn-off time; constrains minimum commutation interval in forced-commutated inverters. |
Pinout & Package
Package: TO-240AA (isolated stud-mount, pressure-contact thyristor with anode/cathode terminals and flat gate). Mechanical outline per Infineon Annex Page 3; clamping force 30–65 kN; weight ≈900 g; creepage distance 25 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (1) | Main current terminal (positive conduction path) | High-current input during forward conduction; thermally coupled to heatsink via stud mount. |
| Cathode (2) | Main current terminal (negative conduction path) | High-current return path; also thermally active surface for two-sided cooling. |
| Gate (4) | Control input for turn-on initiation | Low-energy trigger interface requiring ≤300 mA pulse; isolated from main terminals per IEC 60747-6. |
| Auxiliary Cathode (5) | Secondary cathode connection | Provides redundant low-inductance cathode path for improved di/dt immunity and gate control stability. |
Key Features
| Feature | Design Value |
|---|---|
| Two-sided thermal interface | 0.0125 °C/W RthJC (anode + cathode cooling) enables >4 kW continuous dissipation with proper heatsinking. |
| High dv/dt immunity | 1000 V/µs critical blocking voltage rise rate prevents false triggering in noisy EMI environments. |
| Robust surge rating | 40 kA ITSM (10 ms) supports short-circuit protection in high-inertia motor drives and grid-tied converters. |
| Defined on-state characteristic | Polynomial-based VT(iT) model (A–D coefficients provided) allows precise conduction loss calculation across 500–9500 A. |
| Low gate drive requirement | ≤300 mA IGT and ≤2.5 V VGT simplify gate driver design using standard optocoupled or pulse transformers. |
Applications
| Industrial Rectifier Systems | Static VAR Compensators (SVC) |
|---|---|
|
Use Scenario: High-power AC-to-DC conversion in steel mill rolling drives and electrolysis plants operating at 3.3–6.6 kV line voltage. IC Role / Device Role / Timing Role: Main power switching element in 6- or 12-pulse bridge rectifiers, triggered synchronously with AC zero-crossing for phase-angle control. Use Value: 2000 V VDRM and 1960 A ITAVM enable direct integration into medium-voltage systems without series stacking, reducing component count and failure points. |
Use Scenario: Reactive power compensation in utility substations and wind farm collector grids using thyristor-switched capacitor banks. IC Role / Device Role / Timing Role: Fast-switching valve in TSC (Thyristor-Switched Capacitor) branches, controlled to inject or absorb reactive current within <10 ms. Use Value: 300 µs tq and 1000 V/µs (dv/dt)cr ensure precise, jitter-free switching at system frequency harmonics, maintaining power factor correction accuracy. |
| Traction Converter Rectification | DC Motor Field Supply |
|
Use Scenario: Line-side rectification in railway locomotive converters feeding DC link for IGBT-based traction inverters. IC Role / Device Role / Timing Role: Primary AC input switch in regenerative braking-capable 2-quadrant rectifiers, handling bidirectional energy flow during braking. Use Value: 40 kA ITSM and 125 °C Tvj max support repeated regenerative surges while maintaining reliability over 30+ year infrastructure lifetimes. |
Use Scenario: Adjustable field excitation supply for large DC traction or industrial motors requiring smooth torque control from zero to base speed. IC Role / Device Role / Timing Role: Phase-controlled thyristor in single-phase or three-phase field winding supplies, delivering regulated DC current via firing angle modulation. Use Value: 0.15 mΩ slope resistance (rT) and 1.2 V VT @ 2 kA minimize conduction losses in high-current, low-voltage field circuits, improving overall system efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar phase-control thyristor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TT1960N20KOF | Same VDRM/VRRM (2000 V) and ITAVM (1960 A), but TO-240AB package with round gate and lower RthJC (0.0117 °C/W, two-sided). | Optimized for higher thermal performance in space-constrained cabinets; requires AMP 60598-compatible gate connector. | Select when thermal margin is critical and gate interface matches round-pin drivers. |
| T1960N22TOFVTXPSA1 | Higher VDRM/VRRM (2200 V); identical ITAVM, RthJC, and tq; same TO-240AA package. | Suitable for 3.3 kV-class systems where 2000 V margin is insufficient; adds 10 % voltage headroom at no thermal or footprint penalty. | Select for new designs targeting extended voltage derating or future-proofing against grid overvoltage events. |
Compared with TT1960N20KOF, T1960N20TOFVTXPSA1 trades marginal thermal advantage for standardized flat-gate compatibility; compared with T1960N22TOFVTXPSA1, it offers cost and inventory optimization where 2000 V blocking suffices - both alternatives retain identical gate drive, surge, and commutation behavior.
Availability
T1960N20TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial rectifier systems, static VAR compensators, and traction converter rectification requiring stable component supply, long-lifecycle assurance, and traceable sourcing for safety-critical deployments.
Supply support for T1960N20TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control devices, with leadership in high-voltage thyristor and IGBT technologies.
This part belongs to Infineon's "Netz-Thyristor" series - engineered specifically for ruggedized, line-commutated AC power control in heavy industrial infrastructure, emphasizing thermal resilience, EMI immunity, and multi-decade operational reliability.
FAQ
What is the maximum allowable case temperature for continuous operation?
The maximum allowable case temperature (TC) is 125 °C, as specified in the datasheet's operating temperature range (Tc op: −40...+125 °C). At this temperature, the device sustains 1960 A average on-state current (ITAVM) with two-sided cooling and θ = 180° sinusoidal conduction. Exceeding TC = 125 °C risks irreversible junction degradation and premature failure.
Does T1960N20TOFVTXPSA1 support forced commutation?
No - this is a line-commutated thyristor, not a gate-turn-off (GTO) or integrated gate-commutated thyristor (IGCT). It relies on natural current zero-crossing or external circuit commutation (e.g., LC snubbers or auxiliary inverters) for turn-off. Its 300 µs typical tq reflects performance in such externally commutated topologies, not self-commutation capability.
What gate drive voltage and current are required for reliable turn-on?
Per the datasheet, reliable triggering requires ≤2.5 V gate trigger voltage (VGT max.) and ≤300 mA gate trigger current (IGT max.) at 25 °C and vD = 12 V. Gate pulses must exceed 1.6 A/µs diG/dt and sustain ≥20 µs duration (tg) to ensure latching; recommended gate power limits are 20 W/10 ms (peak).
Can this thyristor be used in parallel configurations?
Yes - but only with strict dynamic current sharing measures. The device's 200 A/µs (diT/dt)cr and matched on-state characteristics support paralleling when using identical gate drive timing, symmetrical busbar layout, and individual current-sharing reactors. Infineon recommends ≤2 devices in parallel without active balancing due to inherent parameter spread in high-current thyristors.
T1960N20TOFVTXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-200AD
- Packaging:
- Tray
- Product Status:
- Obsolete
- Structure:
- Single
- Number of SCRs, Diodes:
- 1 SCR
- Voltage - Off State:
- 2.2 kV
- Current - On State (It (AV)) (Max):
- 1960 A
- Current - On State (It (RMS)) (Max):
- 4100 A
- Voltage - Gate Trigger (Vgt) (Max):
- 2.5 V
- Current - Gate Trigger (Igt) (Max):
- 300 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 40000A @ 50Hz
- Current - Hold (Ih) (Max):
- 300 mA
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
T1960N20TOFVTXPSA1 FAQ
1.How can I place an order for T1960N20TOFVTXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for T1960N20TOFVTXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T1960N20TOFVTXPSA1 reliable?
The price and inventory of T1960N20TOFVTXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T1960N20TOFVTXPSA1 is usually 5 days.
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T1960N20TOFVTXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T1960N20TOFVTXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T1960N20TOFVTXPSA1?
For technical support, including T1960N20TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T1960N20TOFVTXPSA1 requirements.
6.How does Aetrix verify that T1960N20TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?
All T1960N20TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T1960N20TOFVTXPSA1 meets industry standards.
7.What is the process for return or replacement of T1960N20TOFVTXPSA1?
All T1960N20TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T1960N20TOFVTXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T1960N20TOFVTXPSA1 part is unused and in its original packaging.
Return procedure for T1960N20TOFVTXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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