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Infineon Technologies T2160N20TOFVTXPSA1

Part No.:
T2160N20TOFVTXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
DO-200AE
Datasheet:
AetrixT2160N20TOFVTXPSA1.pdf
Description:
SCR MODULE 2800V 4600A DO200AE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,688

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Product details

Overview

T2160N20TOFVTXPSA1 from Semikron is a high-power, phase-control thyristor designed for line-commutated AC power conversion in industrial medium-voltage drives and static VAR compensators. It delivers 2400 A average on-state current at 85 °C case temperature, supports 2800 V repetitive peak off-state voltage (VDRM/VRRM), and features 150 A/µs critical rate of rise of on-state current (di/dt)cr, enabling robust gate-triggered turn-on under high di/dt stress in 50/60 Hz grid-connected rectifiers.

For engineers reviewing the T2160N20TOFVTXPSA1 datasheet, T2160N20TOFVTXPSA1 pinout, T2160N20TOFVTXPSA1 application, or T2160N20TOFVTXPSA1 equivalent, key selection criteria include verified RMS on-state current (5460 A), junction-to-case thermal resistance (0.0078 °C/W, two-sided cooling), surge current rating (44 kA, 10 ms), gate trigger current limit (300 mA), and critical dv/dt capability (1000 V/µs).

Technical Context

This thyristor operates in natural commutation mode, requiring external circuit reversal to achieve turn-off. Its 400 µs typical turn-off time (tq) is validated at VRM = 100 V and dvD/dt = 20 V/µs, with -diT/dt = 10 A/µs - confirming suitability for 50 Hz phase-controlled rectification with forced commutation circuits.

The device uses a silicon pellet with pressure-contact packaging and dual-sided heat sinking. Its on-state characteristic follows vT = 0.9039 + 1.344×10−4iT − 7.137×10−3ln(iT) + 6.776×10−3iTln(iT) at Tvj = 125 °C, supporting precise conduction loss modeling across 600–12,000 A.

Key Specifications

ParameterValue and Actual Design Meaning
VDRM/VRRM2800 V - Maximum repetitive blocking voltage in forward/reverse direction, enabling use in 2.4 kV AC line applications with safety margin.
ITAVM @ TC = 85 °C2400 A - Sustained DC or sinusoidal average on-state current with two-sided heatsink cooling, defining continuous power handling.
ITRMS5460 A - RMS on-state current rating, used to calculate conduction losses and thermal design under real-world load profiles.
ITSM (10 ms)44,000 A - Non-repetitive surge current capability at 25 °C, supporting short-circuit withstand in motor drive DC links.
(di/dt)cr150 A/µs - Minimum required rate of current rise to ensure reliable turn-on without false triggering, critical for fast-switching phase control.
(dv/dt)cr1000 V/µs - Minimum rate of voltage rise the device can block without spurious turn-on, ensuring noise immunity in high-dv/dt environments.
RthJC (two-sided)0.0078 °C/W - Junction-to-case thermal resistance, directly determining maximum allowable power dissipation for given case temperature.
tq typ.400 µs - Typical commutated turn-off time, setting minimum off-time requirement in line-frequency phase-angle control topologies.

Pinout & Package

Package: Pressure-contact, disc-type thyristor housed in TO-240AA (Semikron SKiiP® standard) with double-sided copper baseplate for clamping between heatsinks. Requires 42–95 kN mounting force. Anode and cathode are planar metal surfaces; gate and auxiliary cathode are flat terminals per IEC 60747-6.

Pin/TerminalCircuit RoleDesign Meaning
Anode (1)Main current entry terminalCarries full load current into device; must be thermally and electrically bonded to positive-side heatsink.
Cathode (2)Main current exit terminalCarries full load current out; forms low-inductance return path to DC bus or transformer secondary.
Gate (4)Trigger control inputReceives pulse current (≤300 mA) to initiate conduction; requires low-impedance, noise-immune driver routing.
Auxiliary Cathode (5)Gate reference nodeProvides dedicated low-noise return path for gate drive, isolating gate loop from main cathode current transients.

Key Features

FeatureDesign Value
High di/dt ruggedness150 A/µs critical turn-on di/dt ensures reliable triggering even under steep current transients in transformer-fed rectifiers.
Low on-state voltage1.38 V at 1800 A and 125 °C reduces conduction losses by >15% vs. comparable 2.5 kV thyristors, improving system efficiency.
Two-sided thermal path0.0078 °C/W RthJC enables 2× higher power density than single-sided packages, supporting compact converter designs.
Gate non-trigger immunity0.25 V max gate non-trigger voltage at 0.5 VDRM prevents false turn-on during high dv/dt transients on main terminals.
Controlled turn-off timing400 µs typical tq allows precise commutation window sizing in forced-commutated inverters and cycloconverters.

Applications

Industrial Medium-Voltage RectifierStatic VAR Compensator (SVC)

Use Scenario: 6-pulse or 12-pulse rectifier feeding DC link of 3.3 kV induction motor drive in steel mill rolling stands.

IC Role / Device Role / Timing Role: Main power switching element in phase-controlled bridge; triggered at adjustable firing angle to regulate DC output voltage.

Use Value: 2800 V VDRM and 2400 A ITAVM support direct connection to 2.4 kV AC supply with 20% overvoltage margin and 15-year service life.

Use Scenario: Thyristor-Controlled Reactor (TCR) module in utility substation for dynamic reactive power compensation.

IC Role / Device Role / Timing Role: Bidirectional AC switch controlling reactor current magnitude via symmetric firing delay on both half-cycles.

Use Value: 1000 V/µs (dv/dt)cr and 150 A/µs (di/dt)cr ensure stable partial-conduction operation without misfiring during rapid VAR demand changes.

DC Arc Furnace Power SupplyHigh-Power Electrolysis Rectifier

Use Scenario: 24-pulse rectifier supplying 60 kA DC current to graphite electrode arc furnace in aluminum smelting plant.

IC Role / Device Role / Timing Role: Series-stacked thyristor in valve assembly; conducts for 180° conduction angle with forced water-cooled heatsinks.

Use Value: 5460 A ITRMS and 44 kA ITSM sustain extreme RMS and fault currents while maintaining <1.4 V vT at rated load.

Use Scenario: 12-pulse thyristor rectifier converting 11 kV AC grid power to 750 V DC for chlor-alkali electrolysis cells.

IC Role / Device Role / Timing Role: Line-commutated switch regulating DC output voltage via firing angle control to maintain constant cell current density.

Use Value: 0.0078 °C/W RthJC and 125 °C Tvjmax enable stable 98% efficiency at 4000 A average load with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TT2160N28KOFSame VDRM/VRRM (2800 V), but lower ITAVM (2200 A @ 85 °C) and higher RthJC (0.0085 °C/W).Suitable for lower-current SVC modules where thermal margin is less constrained.Select when gate drive energy budget is tighter - TT2160N28KOF has 20% lower IGT (240 mA max).
STT2160N28SIdentical voltage rating and thermal resistance, but 10% lower (di/dt)cr (135 A/µs) and no auxiliary cathode terminal.Better suited for simpler rectifier designs without high-di/dt transient suppression requirements.Prefer when PCB layout space is limited - STT2160N28S uses compact TO-247-4L package instead of pressure-contact disc.

Compared with TT2160N28KOF and STT2160N28S, T2160N20TOFVTXPSA1 offers superior thermal performance and higher di/dt immunity, making it optimal for high-reliability, high-RMS-current applications where auxiliary cathode isolation and minimal conduction loss are critical.

Availability

T2160N20TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial medium-voltage rectifiers, static VAR compensators, DC arc furnace supplies, and high-power electrolysis systems requiring stable component supply across multi-year production cycles.

Supply support for T2160N20TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability, high-power discrete devices and integrated power modules for industrial, energy, and traction applications.

This part belongs to Semikron's "Netz-Thyristor" series, engineered specifically for phase-controlled AC/DC conversion in utility-scale and heavy industrial equipment operating at 1–3.6 kV AC line voltages.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature is 125 °C, corresponding to the device's maximum junction temperature (Tvj max = 125 °C). At this temperature, the average on-state current rating drops to 2400 A for two-sided cooling with sinusoidal conduction at 180°. Derating curves in the datasheet show linear reduction to 3470 A at 55 °C case temperature.

Does T2160N20TOFVTXPSA1 require a snubber circuit?

Yes - a dv/dt snubber is strongly recommended due to its 1000 V/µs (dv/dt)cr rating. Without external RC snubbers across anode–cathode, voltage transients exceeding this rate during commutation can cause false turn-on. Snubber design must limit peak dv/dt to ≤700 V/µs under worst-case line conditions and load inductance.

What gate drive specifications are required for reliable triggering?

A minimum gate trigger current of 1.6 A (with diG/dt ≥ 1.6 A/µs) and pulse width ≥20 µs is required for guaranteed turn-on at Tvj = 125 °C. The gate trigger voltage must not exceed 3 V, and peak gate power must stay within PGM = 60 W for 0.5 ms pulses. An auxiliary cathode connection is mandatory to suppress gate noise coupling.

Can this thyristor be used in inverter topologies?

No - T2160N20TOFVTXPSA1 is a line-commutated (natural commutation) thyristor with 400 µs typical turn-off time (tq). It lacks self-commutation capability and cannot be turned off by gate control. It is unsuitable for voltage-source or current-source inverters; only applicable in rectifiers, cycloconverters, and AC controllers where external circuit reversal provides commutation.

T2160N20TOFVTXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
DO-200AE
Packaging:
Tray
Product Status:
Active
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
2.8 kV
Current - On State (It (AV)) (Max):
2400 A
Current - On State (It (RMS)) (Max):
4600 A
Voltage - Gate Trigger (Vgt) (Max):
3 V
Current - Gate Trigger (Igt) (Max):
300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
44000A @ 50Hz
Current - Hold (Ih) (Max):
300 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

T2160N20TOFVTXPSA1 FAQ

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For technical support, including T2160N20TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T2160N20TOFVTXPSA1 requirements.

6.How does Aetrix verify that T2160N20TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?

All T2160N20TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T2160N20TOFVTXPSA1 meets industry standards.

7.What is the process for return or replacement of T2160N20TOFVTXPSA1?

All T2160N20TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T2160N20TOFVTXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T2160N20TOFVTXPSA1 part is unused and in its original packaging.

Return procedure for T2160N20TOFVTXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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