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Infineon Technologies T2160N24TOFVTXPSA1

Part No.:
T2160N24TOFVTXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
DO-200AE
Datasheet:
AetrixT2160N24TOFVTXPSA1.pdf
Description:
SCR MODULE 2800V 4600A DO200AE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,894

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Product details

Overview

T2160N24TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 2400 V repetitive peak off-state voltage (VDRM/VRRM), 2400 A average on-state current at TC = 85 °C (ITAVM), and 44 kA non-repetitive surge current (ITSM) with 150 A/µs critical di/dt capability - enabling robust operation in HVDC converter valves, static VAR compensators, and rolling mill drives.

For engineers reviewing the T2160N24TOFVTXPSA1 datasheet, T2160N24TOFVTXPSA1 pinout, T2160N24TOFVTXPSA1 application, or T2160N24TOFVTXPSA1 equivalent, key selection criteria include verified gate trigger current (≤300 mA), junction-to-case thermal resistance (0.0078 °C/W two-sided), critical dv/dt rating (1000 V/µs), and pressure-contact Si-pellet packaging validated for clamping forces of 42–95 kN.

Technical Context

This thyristor operates as a line-commutated, gate-controlled rectifier in phase-angle controlled AC systems. Its 125 °C maximum junction temperature, 400 µs typical turn-off time (tq), and 0.154 mΩ slope resistance support stable conduction under full-sinusoidal (180°) and rectangular current waveforms up to 5460 A RMS.

The device features dual control terminals (Gate and Auxiliary Cathode) and requires precise gate pulse timing (≤3 µs delay) with ≥1.6 A gate current and ≥1.6 A/µs diG/dt to ensure reliable latching (IL ≤ 1500 mA) and prevent false triggering (IGD ≤ 5 mA at 0.5 VDRM).

Key Specifications

Parameter Value and Actual Design Meaning
VDRM / VRRM 2400 V - Maximum repetitive blocking voltage in forward/reverse direction, defining safe operating range in 2.4 kV AC line applications.
ITAVM (TC = 85 °C) 2400 A - Sustained average conduction current with two-sided heatsink cooling, directly sizing thermal management for continuous duty.
ITRM 5460 A - RMS on-state current capacity, determining I²t-based fuse coordination and short-circuit withstand in converter arms.
(diT/dt)cr 150 A/µs - Minimum required rate of rise for reliable turn-on without localized hot-spot formation during commutation.
RthJC (two-sided) 0.0078 °C/W - Junction-to-case thermal resistance under optimal double-sided mounting, enabling accurate junction temperature prediction.
tq (typ.) 400 µs - Typical commutated turn-off time at 100 V reverse recovery voltage, setting minimum dead-time requirements in forced-commutated circuits.
vT (iT = 8800 A) 2.65 V - On-state voltage at extreme conduction, used to calculate conduction losses exceeding 23 kW at rated RMS current.

Pinout & Package

Package: Pressure-contact, disc-type thyristor housed in TO-247-compatible metal package with insulated ceramic base; requires mechanical clamping (42–95 kN) between anode and cathode heat sinks. Gate and auxiliary cathode are flat and round terminals per AMP 60598 standard.

Pin/Terminal Circuit Role Design Meaning
Anode (1) Main power terminal - high-current path into device during conduction Carries full load current; must be thermally coupled to heatsink with RthCH ≤ 0.0025 °C/W (two-sided).
Cathode (2) Main power terminal - high-current return path during conduction Shares thermal path with anode; symmetric mounting ensures balanced current distribution across Si pellet.
Gate (4) Control input - initiates conduction via minority carrier injection Requires ≥1.6 A pulse with ≥1.6 A/µs diG/dt; sensitive to false triggering above 0.25 V gate non-trigger voltage.
Auxiliary Cathode (5) Secondary control terminal - improves gate sensitivity and turn-on uniformity Enables lower IGT (≤300 mA) and tighter tgd (≤3 µs); referenced to main cathode in gate drive circuitry.

Key Features

Feature Design Value
High dv/dt immunity 1000 V/µs critical off-state voltage rise rate prevents spurious turn-on in noisy high-voltage bus environments.
Low slope resistance 0.154 mΩ enables predictable on-state voltage drop and linear conduction loss modeling up to 12 kA peak.
Two-sided thermal interface 0.0078 °C/W RthJC supports >2.5 MW/m² power density when mounted with compliant thermal interface material on both sides.
Robust surge rating 44 kA ITSM (10 ms) allows direct integration into fault-tolerant HVDC valve stacks without external crowbar protection.
Gate-controlled turn-off readiness 400 µs tq enables use in semi-controlled converters where line commutation timing is tightly constrained.

Applications

HVDC Converter Valve Static VAR Compensator (SVC)

Use Scenario: Bidirectional power flow control in ±500 kV HVDC transmission links using 12-pulse line-commutated converters.

IC Role / Device Role / Timing Role: Main power switching element in series-connected thyristor stacks; triggered synchronously with AC phase angle to regulate DC output voltage.

Use Value: 2400 V VDRM and 44 kA ITSM enable 12-thyristor series strings per valve arm with margin for transient overvoltage and fault current.

Use Scenario: Dynamic reactive power compensation for arc furnace loads in steel mills to stabilize grid voltage and reduce flicker.

IC Role / Device Role / Timing Role: Phase-controlled switching element in TCR (Thyristor-Controlled Reactor) branches; gated at precise firing angles to adjust inductive reactance.

Use Value: 150 A/µs (diT/dt)cr and 1000 V/µs (dv/dt)cr ensure stable conduction despite rapid current transients from arc instability.

Railway Traction Rectifier Medium-Voltage Motor Drive

Use Scenario: 25 kV AC railway electrification systems converting overhead line power to DC for traction inverters.

IC Role / Device Role / Timing Role: Line-commutated rectifier in Graetz bridge configuration; conducts for 180° per half-cycle under natural commutation.

Use Value: 2400 A ITAVM at TC = 85 °C supports continuous 4 MW per bridge arm with forced-air-cooled heatsinks.

Use Scenario: Adjustable-speed drives for mining conveyor belts operating from 6.6 kV industrial grids.

IC Role / Device Role / Timing Role: Power switch in phase-controlled rectifier stage feeding DC link capacitors; gated to modulate DC bus voltage.

Use Value: 0.154 mΩ rT and 2.65 V vT at 8800 A allow accurate conduction loss calculation (<23 kW) for thermal derating and cooling design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative Part Technical Difference Application Difference Selection Advice
TT2160N24KOF Same VDRM/VRRM (2400 V) and ITAVM (2400 A), but uses KO package with integrated heat spreader; RthJC = 0.0085 °C/W (anode-side only). Designed for single-sided heatsinking; unsuitable for two-sided clamped assemblies requiring <0.008 °C/W RthJC. Select when retrofitting legacy single-sided cooling infrastructure or space-constrained enclosures.
T2160N24TOFVTXPSA2 Identical electrical specs but qualified to AEC-Q101 automotive grade; includes extended temperature validation (-40°C to +150°C storage). Approved for traction battery charging systems in rail vehicles; not required for industrial fixed-installation applications. Select only if automotive qualification or extended storage temp compliance is mandated by system safety standard.

Compared with TT2160N24KOF and T2160N24TOFVTXPSA2, the T2160N24TOFVTXPSA1 offers superior thermal performance in double-sided configurations and avoids unnecessary automotive qualification overhead, making it optimal for cost-sensitive, high-power industrial converters.

Availability

T2160N24TOFVTXPSA1 is available at Aetrix Electronics and suitable for HVDC converter valves, static VAR compensators, and railway traction rectifiers requiring stable component supply, long-lifecycle support, and traceable batch-level documentation.

Supply support for T2160N24TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

This thyristor belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability, high-current phase-control applications in utility-scale power conversion and heavy industrial motor drives.

FAQ

What is the maximum allowable case temperature for continuous operation?

The T2160N24TOFVTXPSA1 supports a maximum case temperature of +125 °C under sinusoidal conduction at 180° conduction angle with two-sided cooling. At this temperature, the device delivers 2400 A average on-state current (ITAVM). Derating curves in the datasheet show reduced ITAVM to 3470 A at TC = 55 °C for short-duration overload conditions.

Does this thyristor require a snubber circuit?

A snubber is recommended due to the device's 1000 V/µs critical dv/dt rating. Without external RC snubbing, voltage transients exceeding this rate during line commutation can cause false turn-on. The datasheet specifies design guidelines for dv/dt suppression networks based on source inductance and expected switching frequency.

Can the auxiliary cathode terminal be left unconnected?

No. The auxiliary cathode (terminal 5) must be connected to the main cathode (terminal 2) through low-inductance wiring. Leaving it floating degrades gate sensitivity, increases IGT by up to 40%, and extends tgd beyond the 3 µs maximum - risking misfiring in high-precision phase-control systems.

What gate drive voltage and current are required for reliable turn-on?

A minimum gate trigger voltage of 3 V and peak gate current of 1.6 A with diG/dt ≥ 1.6 A/µs are required to achieve guaranteed latching within 3 µs. The gate pulse width must exceed 20 µs, and peak gate power must stay below 60 W for 0.5 ms (per PGM rating curve) to avoid gate junction damage.

T2160N24TOFVTXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
DO-200AE
Packaging:
Tray
Product Status:
Active
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
2.8 kV
Current - On State (It (AV)) (Max):
2400 A
Current - On State (It (RMS)) (Max):
4600 A
Voltage - Gate Trigger (Vgt) (Max):
3 V
Current - Gate Trigger (Igt) (Max):
300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
44000A @ 50Hz
Current - Hold (Ih) (Max):
300 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

T2160N24TOFVTXPSA1 FAQ

1.How can I place an order for T2160N24TOFVTXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for T2160N24TOFVTXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of T2160N24TOFVTXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T2160N24TOFVTXPSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for T2160N24TOFVTXPSA1?

For technical support, including T2160N24TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T2160N24TOFVTXPSA1 requirements.

6.How does Aetrix verify that T2160N24TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?

All T2160N24TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T2160N24TOFVTXPSA1 meets industry standards.

7.What is the process for return or replacement of T2160N24TOFVTXPSA1?

All T2160N24TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T2160N24TOFVTXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T2160N24TOFVTXPSA1 part is unused and in its original packaging.

Return procedure for T2160N24TOFVTXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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