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Infineon Technologies T2160N26TOFVTXPSA1
- Part No.:
- T2160N26TOFVTXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- SCRs - Modules
- Package:
- DO-200AE
- Datasheet:
-
T2160N26TOFVTXPSA1.pdf
- Description:
- SCR MODULE 2800V 4600A DO200AE
- Quantity:
- Payment:
- Shipping:
Inventory:4,592
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Product details
Overview
T2160N26TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 2600 V repetitive peak off-state voltage (VDRM/VRRM), 3470 A average on-state current at TC = 55 °C with 180° conduction, and 44 kA non-repetitive surge current (ITSM) - enabling robust operation in HVDC converter valves, static VAR compensators, and large motor soft starters.
For engineers reviewing the T2160N26TOFVTXPSA1 datasheet, T2160N26TOFVTXPSA1 pinout, T2160N26TOFVTXPSA1 application, or T2160N26TOFVTXPSA1 equivalent, key selection criteria include validated gate trigger characteristics (IGT ≤ 300 mA, VGT ≤ 3 V), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.0078 °C/W two-sided), and confirmed pressure-contact Si-pellet construction per Infineon's IFBIP D series specification.
Technical Context
This thyristor operates as a line-commutated, gate-controlled rectifier in phase-angle controlled AC systems. Its design centers on high-current capability (ITRMS = 5460 A), low on-state voltage (vT = 1.38 V at 1800 A, Tvj = 125 °C), and fast turn-off behavior (typ. tq = 400 µs under specified commutation conditions).
It features a dual-side cooled, press-pack package with isolated anode/cathode terminals and auxiliary cathode for precise gate control. The device requires external snubbers due to its high critical dv/dt (1000 V/µs) and di/dt (150 A/µs), and relies on forced cooling to sustain ITAVM = 3470 A at TC = 55 °C with sinusoidal conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDRM / VRRM | 2600 V - Maximum repetitive blocking voltage in forward/reverse direction; defines usable AC line voltage range up to ~1.8 kV RMS. |
| ITAVM (TC = 55 °C) | 3470 A - Maximum average on-state current under 180° sinusoidal conduction; sets continuous power handling with active cooling. |
| ITRMS | 5460 A - RMS on-state current rating; determines thermal stress under real-world load profiles including harmonics. |
| ITSM (10 ms) | 44000 A - Non-repetitive surge current capacity; enables survival during short-circuit events in grid-connected systems. |
| (dv/dt)cr | 1000 V/µs - Minimum required rate-of-rise immunity to prevent false triggering; mandates careful snubber design. |
| RthJC (two-sided) | 0.0078 °C/W - Junction-to-case thermal resistance with dual-side cooling; enables thermal modeling for heatsink sizing. |
| vT (iT = 1800 A) | 1.38 V - On-state voltage drop at rated current; directly impacts conduction losses (PTAV ≈ 4.8 kW at 3470 A avg). |
| tq (typ.) | 400 µs - Typical commutated turn-off time; constrains maximum operating frequency in phase-controlled rectifiers. |
Pinout & Package
Encapsulated in a press-pack, double-sided cooled housing with isolated metal terminals: Anode (flat surface), Cathode (flat surface), Gate (flat terminal), and Auxiliary Cathode (dedicated low-inductance gate return path). Clamping force: 42–95 kN. Weight: 1200 g. Creepage distance: 25 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Main current entry point during forward conduction | High-current, thermally coupled interface requiring direct mounting to heatsink; supports bidirectional cooling. |
| Cathode | Main current exit point during forward conduction | Electrically isolated from anode; serves as primary return path and thermal interface for second-side cooling. |
| Gate | Control input for triggering conduction | Low-energy trigger terminal (≤300 mA, ≤3 V); requires clean, low-inductance gate drive to avoid false turn-on. |
| Auxiliary Cathode | Reference node for gate drive circuit | Provides dedicated low-impedance return path to minimize gate loop inductance and improve dv/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Pressure-contact Si pellet | Enables ultra-low RthJC (0.0078 °C/W) and high current density without solder fatigue failure modes. |
| Two-sided cooling interface | Allows symmetrical heat extraction from both anode and cathode surfaces, doubling thermal capacity vs. single-sided packages. |
| High dv/dt immunity (1000 V/µs) | Reduces risk of spurious turn-on in high-noise HV environments such as traction substations and arc furnace controls. |
| Validated gate trigger robustness | Guaranteed turn-on with ≤300 mA IGT and ≤3 V VGT across full temperature range (−40 to +125 °C). |
| Low on-state slope resistance | rT = 0.154 mΩ ensures predictable conduction loss scaling and stable thermal performance under overload. |
Applications
| Static VAR Compensator (SVC) | Medium-Voltage Motor Soft Starter |
|---|---|
Use Scenario: Dynamic reactive power compensation in utility transmission networks using thyristor-switched reactors (TSRs) and capacitors (TSCs). IC Role / Device Role / Timing Role: Line-commutated switching element controlling conduction angle to regulate reactive current injection in real time. Use Value: Enables sub-cycle response to grid voltage fluctuations while sustaining 2600 V blocking and >3 kA average current under harmonic-rich loads. |
Use Scenario: Controlled ramp-up of induction motor torque and current during startup to limit mechanical stress and inrush current. IC Role / Device Role / Timing Role: Phase-controlled AC switch regulating RMS voltage applied to stator windings via firing-angle modulation. Use Value: Delivers smooth acceleration with <3500 A ITAVM and withstands repeated 44 kA surges during stalled-rotor conditions. |
| HVDC Converter Valve | Industrial Arc Furnace Control |
Use Scenario: Power conversion in line-commutated HVDC terminals where thyristors form 12- or 24-pulse bridges. IC Role / Device Role / Timing Role: Bidirectional blocking and controlled conduction element in valve stacks operating at ±500 kV DC link voltages. Use Value: Supports 2600 V VDRM with 0.0078 °C/W RthJC to manage thermal transients during fault recovery and load rejection. |
Use Scenario: Regulation of electrode current in electric arc furnaces used for steelmaking, requiring high-current, high-dv/dt switching. IC Role / Device Role / Timing Role: High-power AC phase controller modulating arc energy delivery to optimize melt efficiency and electrode life. Use Value: Withstands 250 mA leakage current at VDRM and 1000 V/µs dv/dt in harsh EMI environments with minimal false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar phase-control thyristor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| T2160N28TOFVTXPSA1 | Higher VDRM/VRRM (2800 V); identical ITAVM, ITSM, and thermal specs. | Better suited for 3.3 kV-class distribution systems or enhanced insulation margin requirements. | Select when system peak line voltage exceeds 2.2 kV RMS or long-term reliability margin is prioritized over cost. |
| T2160N24TOFVTXPSA1 | Lower VDRM/VRRM (2400 V); otherwise identical electrical and thermal ratings. | Optimized for 2.0 kV RMS AC systems with tighter cost constraints and no overvoltage transients. | Choose for cost-sensitive 6.6 kV distribution feeder applications where 2400 V blocking suffices. |
Compared with T2160N26TOFVTXPSA1, the 2800 V variant offers higher voltage headroom at no thermal or current penalty, while the 2400 V version reduces die cost without sacrificing conduction or surge capability - enabling precise voltage-class matching in multi-tier grid infrastructure.
Availability
T2160N26TOFVTXPSA1 is available at Aetrix Electronics and suitable for static VAR compensators, HVDC converter valves, and industrial arc furnace controls requiring stable component supply, long-lifecycle support, and traceable sourcing for mission-critical power electronics.
Supply support for T2160N26TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.
This part belongs to Infineon's IFBIP D-series high-power thyristor family, engineered specifically for line-commutated, high-reliability applications in energy transmission, industrial drives, and grid infrastructure.
FAQ
What is the recommended clamping force for T2160N26TOFVTXPSA1 installation?
The device requires a mechanical clamping force between 42 kN and 95 kN to ensure optimal thermal contact and electrical integrity across the pressure-contact silicon pellet. Under-torque risks increased RthJC and hot-spot formation; over-torque may deform terminals or fracture the wafer. Use calibrated hydraulic tools and follow Infineon's mounting sequence in Application Note AN2010-06.
Does T2160N26TOFVTXPSA1 support forced-air cooling?
No - this press-pack thyristor is designed exclusively for liquid-cooled or conductive heat-sink interfaces with two-sided thermal paths. Forced-air cooling cannot achieve the required 0.0078 °C/W RthJC; insufficient heat extraction will exceed Tvj max = 125 °C even at ITAVM = 1500 A. Liquid cold plates with ≥10 L/min flow and ΔT ≤ 5 K are mandatory for full-rated operation.
Can T2160N26TOFVTXPSA1 be used in reverse-conducting configurations?
No - it is a standard (non-reverse-conducting) thyristor. It blocks reverse voltage up to VRRM = 2600 V but does not conduct in reverse bias. For bidirectional current control, external anti-parallel diodes or reverse-conducting thyristors (RCTs) must be used. The auxiliary cathode is for gate reference only, not reverse conduction.
What gate drive voltage is required to guarantee turn-on across temperature?
A minimum gate pulse of 3 V and 300 mA is required to ensure reliable triggering at Tvj = 125 °C, per datasheet limits. At −40 °C, gate sensitivity improves, but drive circuits must still deliver ≥10 V/1 A peak to overcome increased junction threshold and ensure <3 µs tgd. Snubber-free gate drivers with <50 nH loop inductance are mandatory to meet dv/dt immunity.
T2160N26TOFVTXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AE
- Packaging:
- Tray
- Product Status:
- Active
- Structure:
- Single
- Number of SCRs, Diodes:
- 1 SCR
- Voltage - Off State:
- 2.8 kV
- Current - On State (It (AV)) (Max):
- 2400 A
- Current - On State (It (RMS)) (Max):
- 4600 A
- Voltage - Gate Trigger (Vgt) (Max):
- 3 V
- Current - Gate Trigger (Igt) (Max):
- 300 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 44000A @ 50Hz
- Current - Hold (Ih) (Max):
- 300 mA
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
T2160N26TOFVTXPSA1 FAQ
1.How can I place an order for T2160N26TOFVTXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for T2160N26TOFVTXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T2160N26TOFVTXPSA1 reliable?
The price and inventory of T2160N26TOFVTXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T2160N26TOFVTXPSA1 is usually 5 days.
3.What payment methods are accepted for T2160N26TOFVTXPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T2160N26TOFVTXPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T2160N26TOFVTXPSA1?
T2160N26TOFVTXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T2160N26TOFVTXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T2160N26TOFVTXPSA1?
For technical support, including T2160N26TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T2160N26TOFVTXPSA1 requirements.
6.How does Aetrix verify that T2160N26TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?
All T2160N26TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T2160N26TOFVTXPSA1 meets industry standards.
7.What is the process for return or replacement of T2160N26TOFVTXPSA1?
All T2160N26TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T2160N26TOFVTXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T2160N26TOFVTXPSA1 part is unused and in its original packaging.
Return procedure for T2160N26TOFVTXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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