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Infineon Technologies T2180N12TOFVTXPSA1

Part No.:
T2180N12TOFVTXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
DO-200AD
Datasheet:
AetrixT2180N12TOFVTXPSA1.pdf
Description:
SCR MODULE 1800V 4460A DO200AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,038

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Product details

Overview

T2180N12TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for line-commutated AC power conversion in industrial medium-voltage drives and static VAR compensators. It delivers 2180 A average on-state current at 85 °C case temperature, 1200 V repetitive peak off-state voltage (VDRM/VRRM), and supports 44 kA non-repetitive surge current (ITSM) - enabling robust operation in 3-phase rectifier bridges and motor soft-start systems.

For engineers reviewing the T2180N12TOFVTXPSA1 datasheet, T2180N12TOFVTXPSA1 pinout, T2180N12TOFVTXPSA1 application, or T2180N12TOFVTXPSA1 equivalent, key selection criteria include verified gate trigger current (≤250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.0125 °C/W two-sided), and validated commutation turn-off time (250 µs).

Technical Context

This thyristor operates in natural (line)-commutated mode with precise gate-controlled turn-on timing, requiring external circuitry to ensure forced commutation or zero-crossing switching. Its 125 °C maximum junction temperature and low slope resistance (0.106 mΩ) support high-efficiency conduction under sustained 50/60 Hz sinusoidal loads up to 180° conduction angle.

The device features dual control terminals (flat Gate and round Gate per AMP 60598), auxiliary cathode for improved gate sensitivity, and pressure-contact silicon pellet construction. Thermal performance is defined for two-sided, anode-sided, and cathode-sided cooling configurations - with transient thermal impedance data provided for dynamic loss modeling.

Key Specifications

ParameterValue and Actual Design Meaning
VDRM/VRRM1200 V - Maximum repetitive blocking voltage in forward/reverse direction, defining usable AC line voltage range (e.g., 690 VAC 3-phase systems)
ITAVM @ TC = 85 °C2180 A - Continuous DC-equivalent average on-state current limit under two-sided heatsink cooling
ITSM (10 ms)44000 A - Peak short-circuit withstand capability without latch-up or thermal runaway
(dv/dt)cr1000 V/µs - Minimum required snubber dv/dt immunity to prevent false triggering during voltage transients
tq250 µs - Verified circuit commutated turn-off time at rated current and voltage, critical for commutation circuit design
RthJC (two-sided)0.0125 °C/W - Junction-to-case thermal resistance enabling accurate thermal derating for forced-air or liquid-cooled enclosures
vT @ iT = 8 kA1.75 V - On-state voltage drop at extreme conduction, directly determining conduction losses (P = vT × iT)

Pinout & Package

Package: TO-240AA (isolated press-pack thyristor with ceramic housing, dual-side cooling interface, clamping force 30–65 kN, weight ≈900 g). Mounting requires flat parallel heatsinks and calibrated torque application.

Pin/TerminalCircuit RoleDesign Meaning
Anode (1)Main current terminal (high-side)Carries full load current into device; must be electrically isolated and thermally coupled to heatsink
Cathode (2)Main current terminal (low-side)Completes main conduction path; auxiliary cathode (5) improves gate coupling efficiency
Gate (4, flat)Trigger control inputAccepts ≤250 mA pulse to initiate conduction; flat contact meets DIN/IEC 60747-6 gate drive standards
Gate (4, round)Alternate trigger interfaceRound variant compliant with AMP 60598 connector footprint for modular gate driver integration
Auxiliary Cathode (5)Enhanced gate return pathReduces effective gate-cathode loop inductance, improving di/dt immunity and triggering reliability

Key Features

FeatureDesign Value
Pressure-contact Si pelletEnables ultra-low RthJC (0.0125 °C/W) and high ITSM (44 kA) without wire bonds or solder fatigue risks
Two-sided cooling interfaceAllows symmetric thermal path for balanced heat extraction - essential for >2 kA continuous operation
1000 V/µs critical dv/dt ratingEliminates need for external dv/dt snubbers in most 690 VAC industrial rectifier applications
250 µs verified turn-off time (tq)Supports reliable commutation in 50/60 Hz phase-controlled inverters and cycloconverters
Dual gate form factorsFlat and round gate options simplify mechanical integration across legacy and new-generation gate driver modules

Applications

Industrial Medium-Voltage DrivesStatic VAR Compensators (SVC)

Use Scenario: Three-phase 690 VAC line-commutated rectifier feeding DC link of 2–5 MW induction motor drives.

IC Role / Device Role / Timing Role: Main power switching element in six-pulse bridge; triggered at precise firing angles to regulate DC bus voltage.

Use Value: 2180 A average current rating and 1200 V blocking capability enable direct connection to 690 VAC grids without series stacking.

Use Scenario: Thyristor-Controlled Reactor (TCR) branch in utility-scale reactive power compensation systems.

IC Role / Device Role / Timing Role: Phase-angle controlled conduction to vary fundamental-frequency inductive reactance in real time.

Use Value: 1000 V/µs dv/dt immunity ensures stable operation during rapid grid voltage fluctuations without spurious turn-on.

Metallic Smelting Furnace ControlsHigh-Power DC Traction Rectifiers

Use Scenario: 12-pulse rectifier supplying 30–50 kA DC to submerged arc furnaces operating at 200–500 VDC.

IC Role / Device Role / Timing Role: High-current thyristor in secondary-side rectification; operated at low conduction angles for fine power regulation.

Use Value: 44 kA surge rating and 0.106 mΩ slope resistance minimize voltage drop and thermal stress during electrode short-circuit events.

Use Scenario: Grid-side rectification for 3 kV DC railway traction substations powering metro and light rail systems.

IC Role / Device Role / Timing Role: Line-synchronized switching element in double-star rectifier configuration with interphase transformer.

Use Value: 250 µs tq and two-sided cooling allow reliable commutation at 50 Hz with minimal overlap loss in high-power density installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TT1750N12KOFLower ITAVM (1750 A @ 85 °C); identical VDRM, tq, and RthJCSuitable for 1.5–2.5 MW drives where derated thermal margin is acceptableSelect when system-level thermal design allows 20% lower average current capacity
T2200N12TOFVTXPSA1Higher ITAVM (2200 A); same package, gate specs, and thermal metricsRequired for 5+ MW applications demanding extended conduction margin at 85 °CChoose for new designs targeting >2180 A continuous duty with identical mechanical fit

Compared with TT1750N12KOF and T2200N12TOFVTXPSA1, the T2180N12TOFVTXPSA1 provides optimal balance of proven 2180 A rating, 1200 V blocking, and 0.0125 °C/W thermal resistance - making it the reference-grade choice for 2–4 MW industrial rectifier systems where long-term field reliability is prioritized over marginal current uplift.

Availability

T2180N12TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial medium-voltage drives, static VAR compensators, metallic smelting furnace controls, and high-power DC traction rectifiers requiring stable component supply across multi-year production cycles.

Supply support for T2180N12TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

This part belongs to Infineon's "Netz-Thyristor" high-power phase-control thyristor product line, engineered specifically for line-commutated AC/DC conversion in utility-scale and heavy-industrial applications demanding >2 kA continuous conduction and >1 kV blocking.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (TC) is 85 °C for rated 2180 A average on-state current under two-sided cooling. At 55 °C case temperature, the device supports 3220 A average current with 180° sinusoidal conduction. Exceeding these limits reduces surge capability and accelerates aging.

Does this thyristor require a heatsink on both sides?

Yes - the TO-240AA package is explicitly designed for two-sided cooling to achieve its rated 0.0125 °C/W thermal resistance. Single-sided mounting increases RthJC to 0.0232 °C/W (anode-side) or 0.0250 °C/W (cathode-side), requiring significant derating of ITAVM and ITSM.

Can the flat and round gate terminals be used simultaneously?

No - the flat and round gate contacts are mechanically and electrically identical variants of the same terminal; only one should be connected to the gate driver. Using both introduces parasitic inductance imbalance and risk of uneven current sharing during triggering.

What is the minimum gate trigger voltage required at 125 °C junction temperature?

The maximum gate trigger voltage (VGT) is specified as 2 V at 25 °C. At 125 °C, VGT decreases to approximately 1.3 V due to positive temperature coefficient of threshold voltage; gate drivers must deliver ≥1.5 V at 125 °C to ensure reliable turn-on with margin.

T2180N12TOFVTXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
DO-200AD
Packaging:
Tray
Product Status:
Obsolete
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
1.8 kV
Current - On State (It (AV)) (Max):
2180 A
Current - On State (It (RMS)) (Max):
4460 A
Voltage - Gate Trigger (Vgt) (Max):
2 V
Current - Gate Trigger (Igt) (Max):
250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
44000A @ 50Hz
Current - Hold (Ih) (Max):
300 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

T2180N12TOFVTXPSA1 FAQ

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Please submit a Request for Quotation (RFQ) for T2180N12TOFVTXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of T2180N12TOFVTXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T2180N12TOFVTXPSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for T2180N12TOFVTXPSA1?

For technical support, including T2180N12TOFVTXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T2180N12TOFVTXPSA1 requirements.

6.How does Aetrix verify that T2180N12TOFVTXPSA1 is sourced from the original manufacturer or authorized distributors?

All T2180N12TOFVTXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T2180N12TOFVTXPSA1 meets industry standards.

7.What is the process for return or replacement of T2180N12TOFVTXPSA1?

All T2180N12TOFVTXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T2180N12TOFVTXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T2180N12TOFVTXPSA1 part is unused and in its original packaging.

Return procedure for T2180N12TOFVTXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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