Infineon Technologies T221N18BOFXPSA1

Overview

T221N18BOFXPSA1 from eupec (now Infineon Technologies) is a 1800 V, 221 A average on-state thyristor in pressure-contact stud-mount package, designed for high-power phase-controlled rectification and AC line switching in industrial motor drives and HVDC converters. It features 6500 A non-repetitive surge current capability, 0.12 °C/W junction-to-case thermal resistance, and gate trigger current ≤200 mA at 25°C.

For engineers reviewing the T221N18BOFXPSA1 datasheet, T221N18BOFXPSA1 pinout, T221N18BOFXPSA1 application, or T221N18BOFXPSA1 equivalent, key selection criteria include repetitive peak off-state voltage (VDRM/VRRM = 1800 V), RMS on-state current (ITRMSM = 450 A), critical dv/dt rating (1000 V/µs), and clamping force requirement (5.5 kN) for reliable thermal interface under high-current conduction.

Technical Context

This device is a symmetrically rated, gate-controlled thyristor with planar passivated silicon die and pressure-contact metallization. Its 1800 V blocking rating enables use in 1.5 kV-class AC line systems with margin, while its 150 A/µs critical di/dt supports fast turn-on without spurious triggering under high dI/dt transients.

Thermal performance is defined by transient impedance ZthJC (analytical model provided for DC and θ-conduction angles), with DC RthJC = 0.116 °C/W and maximum junction temperature of 125°C. Gate control uses standard DC-triggering with latching current ≤1.2 A and holding current ≤300 mA at 25°C.

Key Specifications

Pinout & Package

Package: Stud-mount, pressure-contact, case design E (DIN 41894-222A4), M24 × 1.5 threaded anode stud, isolated cathode terminal, 620 g mass, 12 mm creepage distance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power thyristor applications.

Compared with TT221N18KOF and SKKT221/18E, T221N18BOFXPSA1 offers direct stud-mount compatibility with legacy DIN 41894-222A4 heatsinks and full gate drive flexibility, making it optimal for retrofit upgrades and custom gate-controlled rectifier designs where mechanical interchangeability is critical.

Availability

T221N18BOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, medium-voltage rectifiers, and static VAR compensators requiring stable component supply across extended production lifecycles.

Supply support for T221N18BOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

eupec was a European power semiconductor joint venture (later fully acquired by Infineon Technologies) specializing in high-power thyristors, diodes, and IGBTs for industrial energy conversion.

This part belongs to the T221N series of high-current, high-voltage thyristors engineered for ruggedized line-commutated applications in heavy industry, including rolling mills, mining equipment, and grid infrastructure.

FAQ

What is the required gate trigger voltage and current for reliable turn-on?

The T221N18BOFXPSA1 requires a maximum gate trigger voltage of 2 V and gate trigger current of 200 mA at 25°C with 6 V anode-cathode voltage. For guaranteed turn-on across temperature and aging, a 1 A, 20 µs minimum gate pulse with diG/dt ≥1 A/µs is recommended per the technical information sheet.

Can this thyristor be used in forced-air-cooled versus natural-air-cooled configurations?

Yes - the datasheet provides separate derating curves for both natural air cooling (tA = 45°C) and forced air cooling (tA = 35°C, VL = 50 l/s). At 221 A ITAVM, forced air cooling permits up to 320 A intermittent current (ED = 10%) with SD = 1 s, whereas natural cooling limits intermittent operation to 280 A under identical conditions.

What is the maximum allowable clamping force and why is it critical?

The specified clamping force is 5.5 kN. This ensures sufficient mechanical pressure across the silicon die-to-heatsink interface to maintain low thermal resistance (RthJC = 0.116 °C/W) and prevent localized hot spots during 450 A RMS conduction. Under-torque risks thermal runaway; over-torque may fracture the ceramic insulator or deform the copper stud.

Does this device have a specified turn-off time, and how does it affect commutation design?

Yes - the typical circuit-commutated turn-off time (tq) is 200 µs at maximum junction temperature. This value determines the minimum commutation interval required in phase-controlled bridges: for 50 Hz operation, tq constrains the minimum firing angle shift between successive thyristors to avoid overlap conduction and ensure clean current transfer.