Infineon Technologies T2480N26TOFVTXPSA1

Overview

T2480N26TOFVTXPSA1 from Infineon Technologies is a high-power, phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 2600 V repetitive peak off-state voltage (VDRM/VRRM), 5610 A RMS on-state current (ITRMS), and 47.5 kA non-repetitive surge current (ITSM) at 10 ms, with dual-sided cooling support enabling operation up to 2490 A average on-state current (ITAVM) at TC = 85 °C in 180° conduction mode.

For engineers reviewing the T2480N26TOFVTXPSA1 datasheet, T2480N26TOFVTXPSA1 pinout, T2480N26TOFVTXPSA1 application, or T2480N26TOFVTXPSA1 equivalent, key selection criteria include verified gate trigger sensitivity (IGT ≤ 250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.0078 °C/W, two-sided), and validated commutation turn-off time (tq = 400 µs).

Technical Context

This thyristor operates as a line-synchronized, gate-controlled rectifier in phase-angle controlled AC systems-commonly used in motor drives, static VAR compensators, and DC traction rectifiers. Its design supports forced commutation via external circuitry, with specified tq = 400 µs under defined reverse recovery conditions (vRM = 100 V, dvD/dt = 20 V/µs, -diT/dt = 10 A/µs).

It features a silicon pellet with pressure-contact construction, requiring mechanical clamping force of 42–95 kN. Gate control uses flat terminal geometry per AMP 60598 standard, with threshold voltage V(TO) = 0.95 V and slope resistance rT = 0.154 mΩ at Tvj = 125 °C, enabling predictable on-state conduction across 600–12500 A.

Key Specifications

Pinout & Package

Package: Pressure-contact, stud-mount thyristor with isolated anode/cathode terminals and flat gate contact per AMP 60598. Requires mechanical clamping (42–95 kN) and two-sided heatsinking for rated performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT2480N26KOF, T2480N26TOFVTXPSA1 provides superior thermal stability and vibration resilience for utility-scale power electronics; versus T2500N26TOFVTXPSA1, it offers proven field reliability at slightly lower cost where 2490 A ITAVM suffices.

Availability

T2480N26TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, static VAR compensators, and DC traction rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical infrastructure.

Supply support for T2480N26TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This thyristor belongs to Infineon's "Netz-Thyristor" series, engineered specifically for high-reliability, high-power AC/DC conversion in energy transmission, rail traction, and heavy industrial automation systems.

FAQ

What is the recommended gate drive circuit for T2480N26TOFVTXPSA1?

A gate drive must deliver ≥1 A peak current with diG/dt ≥ 1 A/µs and pulse width ≥20 µs to ensure reliable turn-on at Tvj = 125 °C. Use isolated pulse transformers or optocoupled drivers with <100 ns propagation delay. Gate resistor RGK ≥ 10 Ω is mandatory to limit diG/dt and prevent localized heating at the gate-cathode junction.

Can T2480N26TOFVTXPSA1 be used in parallel configurations?

Yes-parallel operation is supported with matched dynamic characteristics and balanced current sharing via external ballasting inductors (≥1 µH per device) and symmetrical busbar layout. Clamping force must be uniform across all devices (±5 kN tolerance), and gate signals must be synchronized within ±100 ns to avoid current imbalance during turn-on.

What is the maximum allowable case temperature during transient overload?

The absolute maximum case temperature remains 125 °C (Tvj max), but transient overload duration is constrained by I²t rating: 11.045 × 10³ A²s at Tvj = 25 °C and tP = 10 ms. Exceeding this integral risks irreversible junction damage-even if TC stays below 125 °C-due to localized thermal runaway in the Si pellet.

Does T2480N26TOFVTXPSA1 require snubber circuits?

Yes-snubbers are mandatory due to its high (dvD/dt)cr = 1000 V/µs rating. A typical RC snubber (R = 47 Ω, C = 0.22 µF) across anode–cathode limits dv/dt to ≤500 V/µs during commutation, preventing false triggering. Snubber power dissipation must be calculated using actual line frequency and conduction angle, not just RMS current.