My Inquiry
My Account
Infineon Technologies T2563N80TOHXPSA1
- Part No.:
- T2563N80TOHXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- SCRs - Modules
- Package:
- DO-200AE
- Datasheet:
-
T2563N80TOHXPSA1.pdf
- Description:
- SCR MODULE 3600A DO200AE
- Quantity:
- Payment:
- Shipping:
Inventory:4,646
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T2563N80TOHXPSA1 from Infineon Technologies is a light-triggered phase-control thyristor designed for high-voltage, high-current power conversion systems. It delivers 2300 A average on-state current at 85°C case temperature, 8000 V repetitive peak reverse voltage, and 93 kA surge current capability. Its primary role is as a main switching element in HVDC transmission valves and static var compensators.
For engineers reviewing the T2563N80TOHXPSA1 datasheet, T2563N80TOHXPSA1 pinout, T2563N80TOHXPSA1 application, or T2563N80TOHXPSA1 equivalent, key selection criteria include verified di/dt rating (300 A/µs), clamping force range (90–130 kN), thermal resistance (4.5 K/kW junction-to-case), and gate trigger light power requirement (≤40 mW).
Technical Context
This thyristor operates as a fully blocking, light-triggered semiconductor switch with integrated break-over diode protection. It sustains full 50/60 Hz reverse blocking over –40°C to +120°C junction temperature and exhibits high DC blocking stability under steady-state voltage stress.
Its turn-off behavior is characterized by 550 µs typical circuit-commutated turn-off time and 22 mAs maximum recovered charge under rated conditions. The device requires precise optical gate triggering and mechanical clamping within 90–130 kN to ensure uniform pressure contact across its 115 mm contact diameter.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 8000 V - maximum repetitive reverse voltage; defines safe blocking margin in HVDC valve stacks |
| ITAVM @ TC=85°C | 2300 A - continuous RMS conduction rating; determines thermal design basis for heatsink sizing |
| ITSM (10 ms) | 93000 A - short-circuit surge current capacity; sets fault-withstand capability of converter arms |
| (diT/dt)cr | 300 A/µs - minimum required commutation di/dt; constrains snubber design and gate drive timing |
| RthJC | 4.5 K/kW - junction-to-case thermal resistance (two-sided cooling); used to calculate ΔTj under loss conditions |
| vT @ 5000 A | 2.95 V max - forward voltage drop at high current; directly impacts conduction losses and efficiency |
| Clamping Force | 90–130 kN - required mechanical compression; ensures low-contact-resistance Si-pellet interface |
Pinout & Package
Package: Press-pack, double-sided cooled, disc-type thyristor with anode and cathode metal surfaces and optical gate input. Dimensions: Ø172.5 mm × 40 mm height; contact diameter Ø115 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Surface) | Main current terminal (positive conduction path) | High-current, pressure-contact interface requiring ≥90 kN clamping for low Rth and uniform current distribution |
| Cathode (Surface) | Main current terminal (negative conduction path) | Thermally coupled output surface; must be mounted to heatsink with ≤1.0 K/kW case-to-heatsink resistance |
| Optical Gate Input | Light-trigger control port | Accepts pulsed LED light (≤40 mW) to initiate conduction; electrically isolated, immune to EMI |
Key Features
| Feature | Design Value |
|---|---|
| Integrated break-over diode | Provides self-protective overvoltage triggering at ≥7500 V, eliminating need for external crowbar circuits |
| High di/dt capability | 300 A/µs critical rate enables fast forced commutation in line-commutated converters without snubber overload |
| Two-sided thermal path | 4.5 K/kW RthJC supports symmetrical heatsinking-reducing hot-spot risk in multi-thyristor valve columns |
| Wide temperature blocking | Full 50/60 Hz reverse blocking from –40°C to +120°C junction enables operation in uncontrolled ambient environments |
Applications
| HVDC Transmission Valve | Static Var Compensator (SVC) |
|---|---|
Use Scenario: Main series-switching element in ±800 kV bipolar HVDC converter valves. IC Role / Device Role / Timing Role: Light-triggered, line-commutated power switch controlling DC link polarity and magnitude. Use Value: 8000 V VRRM and 93 kA ITSM enable robust fault ride-through during AC grid disturbances. | Use Scenario: Thyristor-controlled reactor (TCR) leg in utility-scale reactive power compensation banks. IC Role / Device Role / Timing Role: Phase-angle controlled conduction device regulating fundamental-frequency VAR absorption. Use Value: 300 A/µs (diT/dt)cr allows precise firing-angle resolution down to <1° for dynamic VAR response. |
| Medium Voltage Drive Inverter | Crowbar Protection Circuit |
Use Scenario: High-power traction inverter for rail propulsion systems operating at 3.3–6.5 kV DC link. IC Role / Device Role / Timing Role: Line-commutated inverter switch handling motor regenerative energy return. Use Value: 4.5 K/kW RthJC and two-sided cooling support >1000 W conduction loss dissipation without derating. | Use Scenario: Fast-acting short-circuit bypass in wind turbine pitch control or UPS inverters. IC Role / Device Role / Timing Role: Overvoltage-activated crowbar switch diverting fault current away from sensitive IGBTs. Use Value: Integrated break-over diode triggers conduction at ≥7500 V, enabling sub-microsecond protection response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage light-triggered thyristor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ABB 5STP 32L6800 | 7500 V VRRM, 2200 A ITAVM, 90 kA ITSM, 350 A/µs di/dt | Slightly lower voltage rating and surge current; optimized for ABB's proprietary valve designs | Preferred where ABB valve architecture and gate driver compatibility are required |
| Mitsubishi RT3250FZ-80 | 8000 V VRRM, 2400 A ITAVM, 95 kA ITSM, 250 A/µs di/dt | Higher average current but lower di/dt; uses electrical gate trigger instead of optical | Selected when electrical triggering infrastructure exists and higher ITAVM justifies reduced commutation speed |
Compared with T2563N80TOHXPSA1, the ABB 5STP 32L6800 trades 500 V blocking margin and 3 kA surge headroom for system-level integration advantages, while the Mitsubishi RT3250FZ-80 offers +100 A conduction capacity at the cost of 50 A/µs di/dt margin-impacting snubber sizing and turn-off reliability.
Availability
T2563N80TOHXPSA1 is available at Aetrix Electronics and suitable for HVDC transmission, static var compensation, and medium-voltage drive applications requiring stable component supply, long-lifecycle assurance, and traceable high-reliability sourcing.
Supply support for T2563N80TOHXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.
This part belongs to Infineon's "IFBIP" high-power thyristor product line, engineered specifically for ultra-high-voltage, high-current grid infrastructure applications including HVDC, SVC, and industrial drives.
FAQ
What is the required clamping force for reliable operation?
The T2563N80TOHXPSA1 requires a mechanical clamping force between 90 kN and 130 kN to ensure uniform pressure across its 115 mm contact diameter. Insufficient force increases contact resistance and thermal impedance, risking localized overheating and premature failure under rated current.
Does this thyristor support electrical gate triggering?
No-T2563N80TOHXPSA1 is exclusively light-triggered. It has no electrical gate terminal; conduction is initiated only by optical pulse input (≤40 mW at 25°C). Electrical gate triggering is incompatible and will not activate the device.
What is the maximum allowable junction temperature?
The absolute maximum junction temperature (Tvj max) is 120°C. Operation beyond this limit risks irreversible degradation of the silicon pellet and accelerated aging of the pressure-contact interface, even if short-term current ratings appear satisfied.
How is thermal resistance affected by cooling configuration?
RthJC is 4.5 K/kW for two-sided cooling, but rises to 8.2 K/kW (anode-side only) or 10.0 K/kW (cathode-side only). Single-sided mounting degrades thermal performance significantly and requires derating of ITAVM by up to 30% to maintain safe junction temperature.
T2563N80TOHXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AE
- Packaging:
- Tray
- Product Status:
- Active
- Structure:
- Single
- Number of SCRs, Diodes:
- 1 SCR
- Voltage - Off State:
- -
- Current - On State (It (AV)) (Max):
- 3330 A
- Current - On State (It (RMS)) (Max):
- 3600 A
- Voltage - Gate Trigger (Vgt) (Max):
- -
- Current - Gate Trigger (Igt) (Max):
- -
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 93000A @ 50Hz
- Current - Hold (Ih) (Max):
- 100 mA
- Operating Temperature:
- -40°C ~ 120°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
T2563N80TOHXPSA1 FAQ
1.How can I place an order for T2563N80TOHXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for T2563N80TOHXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T2563N80TOHXPSA1 reliable?
The price and inventory of T2563N80TOHXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T2563N80TOHXPSA1 is usually 5 days.
3.What payment methods are accepted for T2563N80TOHXPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T2563N80TOHXPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T2563N80TOHXPSA1?
T2563N80TOHXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T2563N80TOHXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T2563N80TOHXPSA1?
For technical support, including T2563N80TOHXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T2563N80TOHXPSA1 requirements.
6.How does Aetrix verify that T2563N80TOHXPSA1 is sourced from the original manufacturer or authorized distributors?
All T2563N80TOHXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T2563N80TOHXPSA1 meets industry standards.
7.What is the process for return or replacement of T2563N80TOHXPSA1?
All T2563N80TOHXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T2563N80TOHXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T2563N80TOHXPSA1 part is unused and in its original packaging.
Return procedure for T2563N80TOHXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T2563N80TOHXPSA1 Tags
-
MCC95-16IO1B
IXYS
-
TT190N16SOFHPSA2
Infineon Technologies
-
MCC162-16IO1
IXYS
-
B612F-2T
Sensata-Crydom
-
MCC312-16IO1
IXYS
-
TT250N16KOFHPSA1
Infineon Technologies
-
CLA60PD1200NA
IXYS
-
MCC56-16IO1B
IXYS
-
TD120N16SOFHPSA1
Infineon Technologies
-
MCC95-12IO1B
IXYS
-
MCMA140P1600TA
IXYS
-
B512F-2
Sensata-Crydom
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
