Infineon Technologies T280N65TOFXPSA1

Overview

T280N65TOFXPSA1 from Infineon Technologies is a phase-control thyristor designed for medium-voltage power conversion and soft-start applications. It delivers 280 A average on-state current at 85°C case temperature, 6500 V repetitive peak blocking voltage, and withstands 5800 A surge current (10 ms, 25°C). Its ceramic hermetic package supports high di/dt turn-on capability (150 A/µs) and high dv/dt immunity (1000 V/µs), enabling robust operation in industrial drive rectifiers.

For engineers reviewing the T280N65TOFXPSA1 datasheet, T280N65TOFXPSA1 pinout, T280N65TOFXPSA1 application, or T280N65TOFXPSA1 equivalent, key selection criteria include verified junction-to-case thermal resistance (40 K/kW), gate trigger current ≤350 mA, threshold voltage ≤1.35 V, slope resistance ≤2.8 mΩ, and clamping force specification (5–9 kN) for reliable pressure-contact mounting.

Technical Context

This thyristor operates as a line-commutated, gate-controlled power switch in AC phase-angle control topologies. Its design centers on high-voltage blocking (6500 V V_DRM/V_RRM) and high-current conduction (280 A I_TAVM at T_C = 85°C), with critical di/dt (150 A/µs) and dv/dt (1000 V/µs) ratings validated per IEC 60747-6.

Thermal performance is defined by a two-sided cooled junction-to-case thermal resistance of 40 K/kW, supported by transient impedance modeling across seven RC network elements. The device uses a silicon pellet with pressure-contact metallization and requires mechanical clamping (5–9 kN) to maintain low R_thJC and stable on-state voltage (≤2.75 V at 500 A).

Key Specifications

Pinout & Package

Hermetically sealed ceramic pressure-contact package (Ø58.5 mm × 27 mm height) with axial terminals. Requires mechanical clamping force of 5–9 kN for electrical and thermal integrity. Contact diameter: 34 mm; creepage distance: 20 mm; clearance distance: 15 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT280N65KOF and T280N65TOF, T280N65TOFXPSA1 provides superior mechanical robustness via pressure-contact ceramic packaging and enhanced gate noise immunity through its auxiliary cathode-critical for unattended operation in medium-voltage industrial infrastructure.

Availability

T280N65TOFXPSA1 is available at Aetrix Electronics and suitable for medium voltage softstarters, drive rectifiers, medium voltage converters, and grid-scale reactive power compensators requiring stable component supply across extended production lifecycles.

Supply support for T280N65TOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This part belongs to Infineon's high-power thyristor product line, engineered specifically for medium-voltage industrial power control-including soft starters, rectifiers, and static VAR compensators-where reliability under high thermal and mechanical stress is non-negotiable.

FAQ

What is the required clamping force for proper thermal and electrical performance?

The T280N65TOFXPSA1 requires a mechanical clamping force between 5 kN and 9 kN to ensure optimal contact resistance and thermal transfer between the silicon pellet and heatsink surfaces. Deviation outside this range increases R_thJC and on-state voltage, risking thermal runaway under rated current. Force must be applied uniformly using calibrated torque tools per Infineon's mounting guidelines.

Does this thyristor support forced-commutation or only line-commutation?

The T280N65TOFXPSA1 is designed exclusively for line-commutated operation. Its 1000 µs typical turn-off time (t_q) and absence of integrated snubber or gate-turn-off capability confirm it cannot be actively commutated. It relies on natural current zero-crossing in AC systems and is not rated for GTO or IGCT-style forced commutation.

Can the auxiliary cathode (pin 5) be left unconnected?

No. Pin 5 (Hilfskathode) must be connected to the same potential as the main cathode (pin 2) to maintain gate drive reference stability. Leaving it floating degrades noise immunity and may cause erratic triggering, especially in high-di/dt environments. It serves as a dedicated low-inductance return path for gate current.

What is the maximum allowable gate trigger pulse width at rated I_GT?

At the maximum gate trigger current of 350 mA, the allowable pulse width is limited by the peak gate power dissipation rating: 20 W for 10 ms (curve 'a' in Fig. 7). Exceeding this limit risks gate metallization damage. For reliable triggering, use ≤5 ms pulses with ≥1 A peak current to reduce required duration while staying within P_GM limits.