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Infineon Technologies T2871N80TOHXPSA1

Part No.:
T2871N80TOHXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
TO-200AF
Datasheet:
AetrixT2871N80TOHXPSA1.pdf
Description:
SCR MODULE 8000V 4120A DO200AE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,247

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Product details

Overview

T2871N80TOHXPSA1 from Infineon Technologies is a high-power phase-control thyristor designed for line-commutated HVDC and medium-voltage drive rectifiers. It delivers 2620 A average on-state current at 85°C case temperature, 7500–8000 V repetitive peak blocking voltage, and 93 kA surge current capability, operating reliably in static var compensation (SVC) systems with bidirectional cooling.

For engineers reviewing the T2871N80TOHXPSA1 datasheet, T2871N80TOHXPSA1 pinout, T2871N80TOHXPSA1 application, or T2871N80TOHXPSA1 equivalent, key selection criteria include clamping force range (90–130 kN), junction-to-case thermal resistance (4.3 K/kW), critical di/dt (300 A/µs), and gate trigger current limit (350 mA).

Technical Context

This thyristor employs pressure-contact silicon pellet construction with dual-sided heat sinking and is rated for full 50/60 Hz blocking over –40°C to +125°C junction temperature. Its 550 µs circuit commutated turn-off time and 22 mAs recovered charge support controlled commutation in load-commutated inverters.

The device features a low on-state slope resistance of 0.336 mΩ and threshold voltage of 1.267 V at maximum junction temperature, enabling precise conduction modeling via its four-parameter on-state characteristic equation (A=0.72998, B=0.000111, C=–0.01889, D=0.02575).

Key Specifications

ParameterValue and Actual Design Meaning
VDRM/VRRM7500–8000 V: Maximum repetitive peak forward/reverse blocking voltage at rated temperature
ITAVM2620 A @ TC=85°C: Continuous average on-state current under specified thermal conditions
ITSM93000 A @ tP=10 ms: Peak non-repetitive surge current handling capability
RthJC4.3 K/kW (two-sided cooling): Thermal resistance from junction to case, defining heatsink sizing baseline
(diT/dt)cr300 A/µs: Minimum required rate of rise of on-state current to ensure reliable turn-on
(dvD/dt)cr2000 V/µs: Maximum allowable off-state voltage transient before spurious triggering
vT01.267 V: Threshold voltage at max junction temperature, used in conduction loss calculation
rT0.336 mΩ: Slope resistance determining linear portion of on-state voltage vs. current

Pinout & Package

Package: Disc-type, double-side cooled, press-pack thyristor with 172.5 mm max diameter, 115 mm contact diameter, and 35 mm height. Requires mechanical clamping force of 90–130 kN.

Pin/TerminalCircuit RoleDesign Meaning
Anode (1)Main power terminal (positive conduction path)High-current DC output connection in rectifier bridges; must be thermally coupled to heatsink
Cathode (2)Main power terminal (negative conduction path)Primary return path for on-state current; electrically isolated but thermally active
Gate (4)Control inputTriggers conduction when ≥350 mA pulse applied; referenced to cathode
Hilfskathode / Auxiliary Cathode (5)Gate reference terminalProvides low-inductance gate-cathode reference path to improve di/dt immunity and switching consistency

Key Features

FeatureDesign Value
Full 50/60 Hz blocking over wide temperature rangeStable VDRM/VRRM performance from –40°C to +125°C junction, eliminating derating in outdoor HVDC stations
High di/dt capability300 A/µs critical rate ensures robust turn-on even with fast-rising anode voltage transients in inverter-fed drives
High case non-rupture current93 kA surge rating supports fault ride-through in grid-connected SVC systems without mechanical failure
Two-sided thermal interface4.3 K/kW RthJC enables symmetrical heat extraction, reducing hot-spot formation in high-duty-cycle rectifiers
Pressure-contact Si pelletEliminates wire bonds and solder layers, improving long-term thermal cycling reliability in ±125°C industrial environments

Applications

High Voltage DC Transmission (HVDC)Static Var Compensation (SVC)

Use Scenario: Bidirectional power flow control in multi-terminal HVDC grids using line-commutated converters.

IC Role / Device Role / Timing Role: Main valve element in 12-pulse thyristor bridges, conducting for half-cycle intervals synchronized to AC grid zero-crossings.

Use Value: 7500–8000 V blocking voltage enables direct connection to 500 kV AC systems without series stacking; 93 kA ITSM withstands DC fault currents.

Use Scenario: Dynamic reactive power injection into transmission networks to stabilize voltage during load swings.

IC Role / Device Role / Timing Role: Phase-controlled thyristor pair in TCR (Thyristor-Controlled Reactor) branch, modulating conduction angle per half-cycle.

Use Value: 300 A/µs (di/dt)cr ensures precise firing-angle resolution down to 0.1°; 4.3 K/kW RthJC sustains 100% duty cycle during sustained VAR absorption.

Medium Voltage DrivesLoad Commutating Inverters (LCI)

Use Scenario: Input rectification stage in 6.6 kV industrial motor drives for mining and marine propulsion.

IC Role / Device Role / Timing Role: Six-pulse or 12-pulse rectifier switch handling continuous DC link current up to 2620 A RMS.

Use Value: 2620 A ITAVM at 85°C allows compact heatsink design; 115 mm contact diameter ensures uniform current distribution across large-area Si die.

Use Scenario: Synchronous motor starting and speed control in gas turbine generator sets.

IC Role / Device Role / Timing Role: Inverter leg switch turned off by forced commutation using auxiliary thyristors and LC circuits.

Use Value: 550 µs turn-off time (tq) and 22 mAs Qr define minimum commutation circuit energy; 2000 V/µs (dv/dt)cr prevents false turn-on during commutation transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power phase-control thyristor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TT1700N14KOF1400 V VRRM, 1700 A ITAVM, smaller 100 mm diameter packageTargeted at lower-voltage 3.3 kV drives; insufficient for 500 kV HVDC valve stacksSelect only for retrofit in legacy 1400 V systems where footprint and thermal mass constraints prohibit larger devices
SKKT 92/18 E1800 V VRRM, 920 A ITAVM, stud-mount package with integrated heatsink baseDesigned for single-phase 400 V industrial rectifiers; lacks pressure-contact construction and bidirectional coolingUse only in cost-sensitive, low-power (<1 MW) applications where clamping infrastructure is unavailable

Compared with TT1700N14KOF and SKKT 92/18 E, T2871N80TOHXPSA1 provides 5.7× higher blocking voltage and 2.8× higher average current, making it uniquely suitable for utility-scale HVDC and SVC-where alternatives require series/parallel stacking that increases complexity, failure risk, and thermal imbalance.

Availability

T2871N80TOHXPSA1 is available at Aetrix Electronics and suitable for high-voltage direct current transmission (HVDC), static var compensation (SVC), and medium-voltage drive rectification requiring stable component supply across extended production lifecycles.

Supply support for T2871N80TOHXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

This part belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability, high-current phase-controlled applications in utility-grade power conversion systems including HVDC valves and static compensators.

FAQ

What is the required clamping force for T2871N80TOHXPSA1 installation?

The device requires a mechanical clamping force between 90 kN and 130 kN to ensure optimal thermal contact and current sharing across the pressure-contact silicon pellet. Under-torque risks increased on-state voltage and localized heating; over-torque may deform the copper housing or damage internal interfaces. Force must be applied uniformly using calibrated hydraulic tools per Infineon's mounting instructions.

Does T2871N80TOHXPSA1 support gate-assisted turn-off?

No-T2871N80TOHXPSA1 is a conventional phase-control thyristor and cannot be turned off by gate signal. Turn-off relies entirely on natural current zero-crossing (line commutation) or external forced commutation circuits. Its 550 µs turn-off time (tq) and 22 mAs recovered charge (Qr) are parameters for designing such commutation networks, not indicators of gate-controlled shutdown capability.

How is the auxiliary cathode (terminal 5) used in circuit design?

Terminal 5 (Hilfskathode) provides a dedicated low-inductance return path for gate drive current, decoupling gate loop impedance from main cathode current paths. It must be connected directly to the gate driver's cathode reference with minimal trace length-typically via coaxial gate cable shield or dedicated low-L strap-to maintain 300 A/µs di/dt immunity and prevent false triggering during high dv/dt transients.

Can T2871N80TOHXPSA1 be operated with single-sided cooling?

Yes-but thermal resistance rises to 7.8 K/kW (anode-side) or 9.6 K/kW (cathode-side), increasing junction temperature by ~3.5–4.5°C per kW of conduction loss versus two-sided cooling. Derating of ITAVM is mandatory: at 85°C case temperature, single-sided operation reduces usable average current by approximately 22% compared to the rated 2620 A, requiring revised heatsink and airflow specifications.

T2871N80TOHXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-200AF
Packaging:
Tray
Product Status:
Active
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
8 kV
Current - On State (It (AV)) (Max):
3660 A
Current - On State (It (RMS)) (Max):
4120 A
Voltage - Gate Trigger (Vgt) (Max):
2.5 V
Current - Gate Trigger (Igt) (Max):
350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
93000A @ 50Hz
Current - Hold (Ih) (Max):
350 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

T2871N80TOHXPSA1 FAQ

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For technical support, including T2871N80TOHXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T2871N80TOHXPSA1 requirements.

6.How does Aetrix verify that T2871N80TOHXPSA1 is sourced from the original manufacturer or authorized distributors?

All T2871N80TOHXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T2871N80TOHXPSA1 meets industry standards.

7.What is the process for return or replacement of T2871N80TOHXPSA1?

All T2871N80TOHXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T2871N80TOHXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T2871N80TOHXPSA1 part is unused and in its original packaging.

Return procedure for T2871N80TOHXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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