Infineon Technologies T3401N36TOFVTXPSA1

Overview

T3401N36TOFVTXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power medium-voltage AC/DC conversion, featuring V_DRM/V_RRM = 3600 V, I_TAVM = 3560 A at T_C = 85°C, and I_TSM = 91 kA (10 ms), used in load-commutated inverters and crowbar protection circuits.

For engineers reviewing the T3401N36TOFVTXPSA1 datasheet, T3401N36TOFVTXPSA1 pinout, T3401N36TOFVTXPSA1 application, or T3401N36TOFVTXPSA1 equivalent, key selection criteria include blocking voltage stability at 125°C junction, di/dt capability of 300 A/µs, gate trigger current ≤350 mA, and two-sided clamping force range of 63–91 kN.

Technical Context

This thyristor operates as a line-synchronized, gate-controlled power switch in semi- or fully-controlled rectifier bridges and forced-commutated converters. Its design supports bidirectional heat sinking with R_thJC = 5.0 K/kW (two-sided), and it maintains stable blocking up to 125°C junction temperature under 50/60 Hz AC waveforms.

The device uses a pressure-contact silicon pellet construction with discrete anode, cathode, gate, and auxiliary cathode terminals. Critical switching behavior includes (di/dt)_cr = 300 A/µs and (dv/dt)_cr = 1000 V/µs, enabling reliable turn-on in high-di/dt drive applications without snubbers.

Key Specifications

Pinout & Package

Package: Press-pack, double-sided cooled, disc-type thyristor with 151.5 mm max diameter, 100 mm contact diameter, and 35 mm height. Requires mechanical clamping force of 63–91 kN.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT1700N36KOF and SKKT 550/36E, T3401N36TOFVTXPSA1 delivers superior thermal performance (5.0 vs. ≥5.2 K/kW), highest di/dt tolerance (300 vs. ≤250 A/µs), and tightest turn-off timing (300 µs), making it optimal for high-reliability, high-power-density medium-voltage drive rectifiers.

Availability

T3401N36TOFVTXPSA1 is available at Aetrix Electronics and suitable for medium voltage drives, high-current rectifiers, and crowbar protection systems requiring stable component supply, long-life pressure-contact reliability, and certified 3600 V blocking performance.

Supply support for T3401N36TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's "Netz-Thyristor" series-engineered specifically for high-power, line-commutated applications in energy infrastructure, including HVDC converters, large motor drives, and grid-tied power conditioning systems.

FAQ

What is the recommended clamping force range for T3401N36TOFVTXPSA1?

The device requires a mechanical clamping force between 63 kN and 91 kN to ensure uniform pressure distribution across the 100 mm contact diameter. Insufficient force increases contact resistance and thermal impedance, while excessive force risks ceramic housing fracture. Force must be applied symmetrically using calibrated torque tools per Infineon's mounting guidelines.

Does T3401N36TOFVTXPSA1 support single-sided cooling?

Yes, but with degraded thermal performance: R_thJC rises to 9.0 K/kW (anode-cooled) or 11.2 K/kW (cathode-cooled), limiting continuous power dissipation. Two-sided cooling is strongly recommended to maintain 5.0 K/kW and enable full 3560 A I_TAVM rating. Single-sided use requires derating by ≥25% in current and thermal load.

What gate drive parameters are required for reliable turn-on?

A minimum gate trigger current of 3 A (latching) with di/dt ≥6 A/µs and pulse width ≥20 µs is required. Gate voltage must exceed 2.5 V (max V_GT) under 12 V anode-cathode bias. Drive circuit inductance must be <100 nH to preserve 300 A/µs di/dt capability and prevent spurious turn-off during high dv/dt transients.

How does the auxiliary cathode (terminal 5) function in gate control?

Terminal 5 provides a dedicated low-impedance return path for gate current, decoupling gate loop inductance from the main cathode current path. This improves triggering consistency under high di/dt conditions and reduces sensitivity to cathode voltage spikes during commutation-critical for stable operation in load-commutated inverters with asymmetric current sharing.