Infineon Technologies T3441N52TOHXPSA1

Overview

T3441N52TOHXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line commutation in medium-voltage drive and static VAR compensation systems. It delivers 3200 A average on-state current at 85°C case temperature, 4800–5200 V repetitive peak off-state voltage, and 82 kA surge current capability with 300 A/µs critical di/dt rating. Used in load-commutated inverters and cycloconverters operating at 50/60 Hz.

For engineers reviewing the T3441N52TOHXPSA1 datasheet, T3441N52TOHXPSA1 pinout, T3441N52TOHXPSA1 application, or T3441N52TOHXPSA1 equivalent, key selection criteria include verified clamping force (63–91 kN), two-sided thermal resistance (4.5 K/kW), gate trigger current ≤350 mA, and transient recovery charge ≤20 mAs under defined commutation conditions.

Technical Context

This thyristor employs pressure-contact silicon pellet construction with dual-sided heat sinking and is rated for full 50/60 Hz blocking across –40°C to +125°C junction temperature. Its design supports forced-commutated turn-off with 600 µs typical circuit commutated turn-off time and 2000 V/µs critical dv/dt rating.

It features a low conduction drop-0.764 V threshold voltage and 0.234 mΩ slope resistance at maximum junction temperature-enabling high-efficiency operation in rectifier bridges and static compensators where thermal management and surge robustness are critical.

Key Specifications

Pinout & Package

Package: Press-pack, double-sided cooled, disc-type thyristor with 151.5 mm max diameter, 100 mm contact diameter, and 26 mm height. Requires external clamping assembly per Infineon mounting guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT1700N14KOF and T3431N52TOHXPSA1, the T3441N52TOHXPSA1 uniquely combines 5200 V blocking, 3200 A conduction, and 4.5 K/kW two-sided thermal resistance-making it the sole option for high-reliability, dual-cooled medium-voltage cycloconverters and SVC systems.

Availability

T3441N52TOHXPSA1 is available at Aetrix Electronics and suitable for static VAR compensation, medium voltage drives, load-commutated inverters, and high-power rectifier applications requiring stable component supply across extended production lifecycles.

Supply support for T3441N52TOHXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and R&D infrastructure.

This thyristor belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability, high-power AC line commutation in utility-scale reactive power systems and heavy-duty industrial drives.

FAQ

What is the required clamping force for reliable operation of T3441N52TOHXPSA1?

The device requires a mechanical clamping force between 63 kN and 91 kN to ensure stable thermal contact and low-resistance electrical interface across its 100 mm contact diameter. Insufficient force increases R_thJC and v_T, risking thermal runaway; excessive force may damage the ceramic housing or internal Si pellet. Mounting must follow Infineon's torque and alignment specifications in Application Note AN2011-05.

Can T3441N52TOHXPSA1 be used in single-sided cooled configurations?

Yes, but with derated performance: R_thJC rises to 8.6 K/kW (anode-side) or 9.5 K/kW (cathode-side) versus 4.5 K/kW in two-sided mode. This increases junction temperature rise by ~90%, requiring significant reduction in I_TAVM or enhanced heatsink capacity. Dual-sided cooling is strongly recommended for rated 3200 A operation.

What gate drive parameters are necessary to reliably trigger T3441N52TOHXPSA1?

A minimum gate trigger current of 3 A (latching) with di/dt ≥6 A/µs and pulse width ≥20 µs is required at 25°C. At maximum junction temperature, I_GT ≤350 mA and V_GT ≤2.5 V must be met. Gate non-trigger current must stay below 20 mA at full V_DRM to prevent false turn-on in noisy EMI environments.

How does the 600 µs typical turn-off time (t_q) impact commutation circuit design?

The 600 µs t_q defines the minimum time required for forward current decay and reverse recovery before reapplied voltage exceeds 0.67 V_DRM. Commutation circuits must provide sufficient reverse bias duration and dv/dt limiting (≤20 V/µs) to avoid commutation failure. This value is measured at I_TAVM, so t_q decreases linearly with lower load current.