Infineon Technologies T4021N52TOHXPSA1

Overview

T4021N52TOHXPSA1 from Infineon Technologies is a high-power phase-control thyristor designed for medium-voltage static power conversion systems. It delivers 3880 A average on-state current at 85°C case temperature, 4800–5350 V repetitive peak off-state voltage, and 105 kA surge current capability. Used in static var compensators (SVC), drive rectifiers, and crowbar protection circuits.

For engineers reviewing the T4021N52TOHXPSA1 datasheet, T4021N52TOHXPSA1 pinout, T4021N52TOHXPSA1 application, or T4021N52TOHXPSA1 equivalent, key selection criteria include blocking voltage rating, di/dt capability (300 A/µs), thermal resistance (4.3 K/kW), gate trigger requirements (≤350 mA), and clamping force specification (90–130 kN) for press-pack mounting.

Technical Context

This thyristor employs a silicon pellet with double-sided pressure contact construction, enabling bidirectional heat dissipation and stable operation across –40°C to +125°C junction temperature. Its 550 µs circuit-commutated turn-off time and 28 mAs recovered charge support controlled commutation in load-commutated inverters and medium-voltage drives.

The device features high DC blocking stability and critical dv/dt immunity of 2000 V/µs at maximum junction temperature, ensuring reliable non-conduction during transient overvoltages. Gate control is optimized for 3 A latching current and 350 mA maximum trigger current under standard test conditions (12 V anode-cathode voltage).

Key Specifications

Pinout & Package

Press-pack thyristor with double-sided cooling interface and mechanical clamping. Package dimensions: Ø172 mm diameter, 115 mm contact diameter, 35 mm height. Clamping force range: 90–130 kN.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT1200N22KOF and STT1000N48TOF, T4021N52TOHXPSA1 provides superior voltage margin for 5.2 kV-class systems while maintaining industry-leading 3880 A conduction capacity and validated 90–130 kN clamping compatibility with standard SVC module tooling.

Availability

T4021N52TOHXPSA1 is available at Aetrix Electronics and suitable for static var compensation (SVC), medium voltage drives, and crowbar protection systems requiring stable component supply, long-term lifecycle support, and traceable high-reliability power semiconductors.

Supply support for T4021N52TOHXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's high-power thyristor product line, engineered specifically for utility-grade static power conversion, where reliability under extreme thermal and electrical stress is mandatory.

FAQ

What is the recommended clamping force range for T4021N52TOHXPSA1 installation?

The device requires mechanical clamping between 90 kN and 130 kN to ensure optimal thermal contact and electrical integrity across its double-sided silicon pellet interface. Forces below 90 kN risk increased RthJC and premature thermal runaway; forces above 130 kN may deform internal contacts or compromise gate isolation. Use calibrated hydraulic tools and follow Infineon's mounting procedure TN02032.

Does T4021N52TOHXPSA1 support gate triggering with AC-coupled pulses?

No - the gate structure is optimized for unidirectional current injection. Trigger pulses must be DC-coupled with polarity matching gate-to-cathode (G–K), minimum 3 A latching current, and ≤2 µs delay. AC coupling introduces reverse gate voltage risk and violates IEC 60747-6 gate stress limits; use isolated DC gate drivers with active pull-down.

How does the 550 µs turn-off time affect system commutation design?

This value defines the minimum interval required between successive firing commands in forced-commutated topologies. Designers must allocate ≥550 µs dead time plus safety margin (typically 1.5×) to ensure full carrier recombination before reverse voltage reapplies. Failure to observe this results in commutation failure and device destruction in LCI or cycloconverter applications.

Can T4021N52TOHXPSA1 be used in single-sided cooled configurations?

Yes, but with significant derating: RthJC increases to 7.8 K/kW (anode-cooled) or 9.6 K/kW (cathode-cooled), reducing maximum ITAVM to ~2200 A at 85°C case. Thermal simulation and hot-spot validation are mandatory. Two-sided cooling is strongly preferred to maintain rated 3880 A performance and avoid localized junction overheating.