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Infineon Technologies T660N22TOFXPSA1

Part No.:
T660N22TOFXPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
DO-200AB, B-PUK
Datasheet:
AetrixT660N22TOFXPSA1.pdf
Description:
SCR MODULE 2600V 1500A DO200AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,417

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Product details

Overview

T660N22TOFXPSA1 from Infineon Technologies is a high-power phase-control thyristor designed for industrial AC power regulation in medium-voltage rectifiers, motor drives, and static VAR compensators. It delivers 660 A average on-state current at 85 °C case temperature, 2200 V repetitive peak off-state voltage (VDRM/VRRM), and withstands 13 kA non-repetitive surge current (ITSM) at 25 °C - enabling robust operation in 3-phase 6-pulse line-commutated converters.

For engineers reviewing the T660N22TOFXPSA1 datasheet, T660N22TOFXPSA1 pinout, T660N22TOFXPSA1 application, or T660N22TOFXPSA1 equivalent, key selection criteria include validated gate trigger current (IGT ≤ 250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.033 °C/W two-sided), on-state voltage (1.32 V at 650 A), and latching current (IL ≤ 1500 mA) under standardized test conditions.

Technical Context

This thyristor operates as a line-commutated, gate-controlled semiconductor switch in half-wave or full-wave AC phase control topologies. Its design supports forced commutation via external circuitry and requires precise gate pulse timing (tgd ≤ 4 µs) to ensure reliable turn-on under high di/dt stress (critical rate of rise of on-state current = 150 A/µs).

Thermal performance is defined by transient junction-to-case impedance ZthJC, with analytical elements provided for two-sided, anode-sided, and cathode-sided cooling configurations. The device's on-state characteristic follows a four-term polynomial (A=1.245, B=3.716×10−4, C=−0.104, D=0.0197) valid for 200–3300 A conduction range at maximum junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDRM/VRRM2200 V - maximum repetitive forward/reverse blocking voltage at Tvj = −40 °C to 125 °C, defining usable AC line voltage range up to 1.5 kV RMS.
ITAVM @ TC = 85 °C660 A - continuous DC or sinusoidal average on-state current limit with two-sided heatsink cooling, directly sizing heat sink thermal mass.
ITSM (10 ms)13 kA - non-repetitive surge current capability at 25 °C, determining short-circuit withstand in uncontrolled rectifier fault scenarios.
(dv/dt)cr1000 V/µs - minimum rate of rise of off-state voltage before spurious turn-on, requiring snubber design with RC time constant ≤ 1.0 µs.
RthJC (two-sided)0.033 °C/W - junction-to-case thermal resistance under optimal dual-face mounting, setting upper bound on allowable power loss for 125 °C max Tvj.
VT @ 650 A1.32 V - on-state voltage drop at rated current and max junction temperature, used to calculate conduction losses (PTAV ≈ ITAV × VT).
IGT max250 mA - maximum gate trigger current required at 12 V anode-cathode voltage and 25 °C, defining minimum driver output capability.

Pinout & Package

The T660N22TOFXPSA1 uses a pressure-contact, stud-mount TO-240AA (also designated "TO-240") package with three terminals: Anode (flat surface), Cathode (flat surface), and Gate (flat or round terminal per AMP 60598 spec). Clamping force must be maintained between 10.5–21 kN for reliable thermal and electrical contact.

Pin/TerminalCircuit RoleDesign Meaning
AnodeMain current entry during forward conductionHigh-current, low-inductance interface to AC line or transformer secondary; requires direct mechanical mounting to heatsink.
CathodeMain current exit during forward conductionPrimary return path for load current; electrically isolated from heatsink unless specified; used for gate reference in common-cathode configurations.
GateControl input for turn-on initiationLow-energy trigger terminal (≤250 mA, ≤2.2 V); polarity-sensitive (anode-positive relative to cathode); requires clean, fast-rising pulse with minimal overshoot.
Auxiliary CathodeSecondary cathode connection for enhanced thermal/mechanical stabilityProvides redundant current path and improved clamping uniformity; must be electrically bonded to main cathode in PCB layout or busbar design.

Key Features

FeatureDesign Value
Two-sided cooling interfaceEnables 0.033 °C/W RthJC, reducing thermal bottleneck in high-power rectifiers where both anode and cathode faces contact heatsinks.
High dv/dt immunity1000 V/µs critical off-state voltage rise rate prevents false triggering in noisy industrial environments with fast-switching adjacent devices.
Low on-state voltage slope resistance0.500 mΩ rT ensures predictable conduction loss scaling across 200–3300 A, simplifying thermal modeling for variable-load applications.
Validated gate timing performance4 µs max gate delay (tgd) at 1 A gate current enables precise firing angle control in 50/60 Hz phase-angle regulators with <1° resolution.
Robust surge rating13 kA ITSM at 10 ms allows single-cycle fault ride-through in grid-tied systems without series fusing, lowering system protection cost.

Applications

Industrial Motor DrivesMedium-Voltage Rectifiers

Use Scenario: Speed-controlled induction motors in steel mill rolling stands operating from 3.3 kV AC supply.

IC Role / Device Role / Timing Role: Main power switching element in 6-pulse thyristor bridge, triggered synchronously with line voltage zero-crossings to regulate DC bus voltage.

Use Value: 660 A average current rating and 2200 V blocking voltage support direct connection to 3.3 kV grid without step-down transformers, reducing system footprint and losses.

Use Scenario: Electrolytic aluminum production cells requiring stable 100 kA DC output from 11 kV AC feeders.

IC Role / Device Role / Timing Role: Series-connected thyristor in multi-pulse rectifier stacks, conducting for 180° conduction angle under forced-air-cooled heatsinks.

Use Value: Two-sided thermal resistance (0.033 °C/W) enables efficient heat extraction at >1 MW per stack, maintaining junction temperature below 125 °C during continuous 970 A operation at 55 °C case.

Static VAR Compensators (SVC)DC Traction Power Supplies

Use Scenario: Reactive power compensation for arc furnace loads in foundries with rapid, asymmetric reactive demand swings.

IC Role / Device Role / Timing Role: Bidirectional thyristor pair in TCR (Thyristor-Controlled Reactor) branch, fired at variable conduction angles to adjust inductive reactance in real time.

Use Value: 150 A/µs critical di/dt rating ensures stable turn-on even during high-slew-rate transients caused by arc instability, preventing misfiring-induced harmonics.

Use Scenario: 1500 V DC supply for urban light rail vehicles fed from 25 kV AC overhead lines via on-board rectification.

IC Role / Device Role / Timing Role: Line-commutated converter thyristor in 12-pulse configuration, operating with 30° firing delay to minimize 11th/13th harmonic injection.

Use Value: 100 mA max off-state leakage current at 125 °C ensures minimal standby losses during vehicle idle periods, extending battery backup runtime for control circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
T660N24TOFHigher VDRM/VRRM = 2400 V; identical ITAVM, RthJC, and gate parameters.Supports higher AC line voltages (e.g., 4.16 kV systems); same thermal and drive requirements.Select when system peak line voltage exceeds 1550 V RMS and derating margin is insufficient with 2200 V rating.
T730N22TOFHigher ITAVM = 730 A at 85 °C; same VDRM, RthJC, and gate specs.Enables higher continuous current in existing heatsink footprints; requires verification of gate driver energy handling.Choose for upgrade paths where conduction loss reduction is prioritized over voltage headroom, and gate driver can deliver ≥300 mA peak.

Compared with T660N22TOFXPSA1, T660N24TOF trades voltage margin for no change in thermal or control behavior, while T730N22TOF increases current capacity without altering blocking capability - making the former ideal for voltage-stressed grids and the latter for thermally constrained high-current upgrades.

Availability

T660N22TOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, medium-voltage rectifiers, static VAR compensators, and DC traction power supplies requiring stable component supply across extended production lifecycles.

Supply support for T660N22TOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability, high-current phase-control applications in utility-scale power conversion, industrial automation, and heavy-duty rectification systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The T660N22TOFXPSA1 supports continuous operation up to 125 °C junction temperature (Tvjsub> max), with maximum case temperature (TC) dependent on cooling method and current. At 660 A average current and two-sided cooling, the datasheet specifies TC ≤ 85 °C to maintain safe thermal margin. Exceeding this requires derating or enhanced heatsinking per the provided ZthJC curves.

Does this thyristor require a snubber circuit?

Yes - due to its 1000 V/µs critical dv/dt rating, a properly designed RC snubber is mandatory to suppress voltage transients during commutation. The snubber must limit dv/dt across the device to below this threshold during turn-off, especially in inductive load applications. Component values are derived from load inductance, stray capacitance, and expected di/dt, per IEC 60747-6 guidelines.

Can the auxiliary cathode terminal be left unconnected?

No - the auxiliary cathode is a structural and thermal enhancement feature, not an optional signal terminal. Leaving it unconnected compromises mechanical clamping uniformity and increases local thermal resistance, risking hot-spot formation and premature failure. It must be electrically bonded to the main cathode and mechanically secured to the heatsink per the mounting instructions in the datasheet annex.

What gate drive voltage and current are required for reliable turn-on?

Reliable turn-on requires a gate pulse of ≥12 V with peak current ≥250 mA (per IGT max spec) and rise time <1 µs. The datasheet confirms triggering at 2.2 V VGT max and 250 mA IGT max under standard test conditions (Tvj = 25 °C, vD = 12 V). For robustness across temperature and aging, designs should target 15–20 V and 400–500 mA peak drive capability.

T660N22TOFXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
DO-200AB, B-PUK
Packaging:
Tray
Product Status:
Obsolete
Structure:
Single
Number of SCRs, Diodes:
1 SCR
Voltage - Off State:
2.6 kV
Current - On State (It (AV)) (Max):
660 A
Current - On State (It (RMS)) (Max):
1500 A
Voltage - Gate Trigger (Vgt) (Max):
2.2 V
Current - Gate Trigger (Igt) (Max):
250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
13000A @ 50Hz
Current - Hold (Ih) (Max):
300 mA
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Clamp On

T660N22TOFXPSA1 FAQ

1.How can I place an order for T660N22TOFXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for T660N22TOFXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T660N22TOFXPSA1 reliable?

The price and inventory of T660N22TOFXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T660N22TOFXPSA1 is usually 5 days.

3.What payment methods are accepted for T660N22TOFXPSA1?

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T660N22TOFXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T660N22TOFXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T660N22TOFXPSA1?

For technical support, including T660N22TOFXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T660N22TOFXPSA1 requirements.

6.How does Aetrix verify that T660N22TOFXPSA1 is sourced from the original manufacturer or authorized distributors?

All T660N22TOFXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T660N22TOFXPSA1 meets industry standards.

7.What is the process for return or replacement of T660N22TOFXPSA1?

All T660N22TOFXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T660N22TOFXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T660N22TOFXPSA1 part is unused and in its original packaging.

Return procedure for T660N22TOFXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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