Infineon Technologies T660N26TOFXPSA1
- Part No.:
- T660N26TOFXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- SCRs - Modules
- Package:
- DO-200AB, B-PUK
- Datasheet:
-
T660N26TOFXPSA1.pdf
- Description:
- SCR MODULE 2600V 1500A DO200AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,865
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Product details
Overview
T660N26TOFXPSA1 from Infineon Technologies is a phase-control thyristor designed for high-power AC line commutation in industrial rectifiers, motor drives, and static VAR compensators. It delivers 660 A average on-state current at 85 °C case temperature, 2600 V repetitive peak off-state voltage (VDRM/VRRM), and withstands 13 kA non-repetitive surge current (ITSM) with 150 A/µs critical di/dt rating.
For engineers reviewing the T660N26TOFXPSA1 datasheet, T660N26TOFXPSA1 pinout, T660N26TOFXPSA1 application, or T660N26TOFXPSA1 equivalent, this device is selected for medium-frequency (50–400 Hz), high-current phase-angle control where thermal robustness, gate trigger reliability, and transient overvoltage immunity are critical.
Technical Context
This thyristor operates as a latching, gate-controlled unidirectional switch in series with AC mains or DC link circuits. Its 125 °C maximum junction temperature, 0.033 °C/W junction-to-case thermal resistance (two-sided cooling), and 300 µs circuit-commutated turn-off time (tq) define its suitability for forced-commutated converters and line-synchronized inverters.
The device uses pressure-contact silicon pellet construction with auxiliary cathode terminal and dual gate configurations (flat and round). Gate triggering requires ≤250 mA IGT and ≤2.2 V VGT at 25 °C, while maintaining <10 mA non-trigger current (IGD) up to 125 °C - ensuring noise-immune firing in electrically noisy industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDRM / VRRM | 2600 V - supports 1.73× RMS line voltage up to 1500 VAC systems without derating |
| ITAVM (TC = 85 °C) | 660 A - continuous conduction capability under standard industrial heatsink conditions |
| ITRM | 1520 A - RMS current rating enabling 2.3× ITAVM overload margin for short-term duty cycles |
| ITSM (10 ms) | 13000 A - withstands short-circuit energy in transformer-fed rectifier faults |
| (diT/dt)cr | 150 A/µs - ensures reliable turn-on without false triggering during fast-rising load currents |
| RthJC (two-sided) | 0.033 °C/W - enables 125 °C junction operation with ≤4.1 kW conduction loss at full ITAVM |
| tq (commutated) | 300 µs - defines minimum off-time for forced commutation in cycloconverters and inverters |
Pinout & Package
Package: TO-264 (isolated, pressure-contact, stud-mount) with anode (1), cathode (2), gate (4), and auxiliary cathode (5) terminals per DIN 41850-1 mechanical drawing. Requires 10.5–21 kN clamping force for thermal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (1) | Main current entry point | Carries full load current; must be thermally coupled to heatsink via insulated mounting |
| Cathode (2) | Main current exit point | Primary return path; low-inductance connection required for dv/dt stability |
| Gate (4) | Trigger control input | Accepts pulse current ≤250 mA; isolated from main terminals for noise immunity |
| Auxiliary Cathode (5) | Gate reference and sensing node | Provides stable gate-cathode reference independent of main cathode voltage drop |
Key Features
| Feature | Design Value |
|---|---|
| Two-sided cooling interface | Reduces RthJC to 0.033 °C/W - cuts junction temperature rise by 35% vs. single-sided mounting |
| Pressure-contact Si pellet | Eliminates wire bonds - improves thermal cycling endurance beyond 10⁴ cycles at ΔTj = 100 K |
| 150 A/µs critical di/dt | Enables direct triggering in high-dI/dt induction heating inverters without snubber networks |
| 0.25 V gate non-trigger voltage (VGD) | Rejects common-mode transients up to 250 V/µs on gate drive lines |
| 300 µs tq with 100 V reverse recovery | Supports 3.3 kHz maximum commutation frequency in GTO-assisted hybrid topologies |
Applications
| Industrial Motor Drives | High-Power Rectification |
|---|---|
Use Scenario: 3-phase, 6-pulse phase-controlled rectifier feeding DC bus of 2 MW rolling mill drive. IC Role / Device Role / Timing Role: Main power switching element in bridge arm; triggered at precise firing angle to regulate DC output voltage. Use Value: 2600 V VDRM allows direct connection to 1380 VAC grid without series stacking; 660 A ITAVM sustains continuous 95% load duty cycle. | Use Scenario: Excitation system for synchronous generator in hydroelectric plant. IC Role / Device Role / Timing Role: Thyristor in controlled half-wave field supply; regulates rotor magnetization via firing angle modulation. Use Value: 150 A/µs (diT/dt)cr prevents misfiring during rapid field current ramp-up; auxiliary cathode ensures stable gate reference amid high dV/dt across stator windings. |
| Static VAR Compensation | Medium-Frequency Induction Heating |
Use Scenario: Thyristor-switched capacitor bank for reactive power correction in steel mill arc furnace supply. IC Role / Device Role / Timing Role: Bidirectional switching unit (paired anti-parallel) controlling capacitor insertion timing within AC half-cycle. Use Value: 13 kA ITSM handles inrush current surges during capacitor energization; 1000 V/µs (dv/dt)cr prevents spurious turn-on from voltage transients on 35 kV distribution bus. | Use Scenario: Inverter bridge in 10 kHz induction heater for pipe annealing. IC Role / Device Role / Timing Role: Line-commutated switch in series-resonant inverter; fired at zero-voltage crossing to minimize switching loss. Use Value: 300 µs tq enables reliable commutation at 10 kHz carrier frequency when paired with fast-recovery diodes; 0.033 °C/W RthJC maintains junction below 125 °C under 1200 A peak load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar phase-control thyristor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TT660N26KOF | Same VDRM/VRRM and ITAVM, but TO-247 package with solderable leads instead of stud-mount | Limited to PCB-based designs with lower thermal mass; unsuitable for >1000 A RMS systems | Select when board-level integration and automated assembly are prioritized over ultimate thermal performance |
| T660N26KOFTL | Identical specs but with lead-free plating and RoHS-compliant packaging | No functional difference; required only for EU/China export compliance | Select for new designs targeting CE, CCC, or REACH certification without redesign |
Compared with TT660N26KOF and T660N26KOFTL, the T660N26TOFXPSA1 provides superior thermal dissipation via stud-mounting and higher mechanical ruggedness for high-vibration environments - making it the preferred choice for utility-scale and heavy industrial installations where long-term reliability outweighs assembly convenience.
Availability
T660N26TOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-power rectification, and static VAR compensation requiring stable component supply across multi-year production programs.
Supply support for T660N26TOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.
This part belongs to Infineon's "Netz-Thyristor" product line, engineered specifically for high-reliability, high-current phase-angle control in utility-grade power conversion systems operating at 50/60 Hz and harmonics up to 400 Hz.
FAQ
What is the recommended gate drive circuit for T660N26TOFXPSA1?
A pulse transformer or optocoupler-isolated gate driver delivering ≥1 A peak gate current for ≥20 µs is required to ensure reliable latching. The gate must be referenced to the auxiliary cathode (pin 5), not the main cathode, to avoid false triggering caused by cathode voltage overshoot during commutation. Gate resistor should limit IGT to ≤250 mA while maintaining VGT ≥2.2 V under worst-case temperature.
Can T660N26TOFXPSA1 be used in reverse-conducting configurations?
No - this is a standard (non-symmetrical) thyristor with no reverse conduction capability. It blocks reverse voltage up to 2600 V (VRRM) but cannot conduct reverse current. For bidirectional AC switching, two devices must be connected in inverse-parallel, or a dedicated reverse-conducting thyristor (RCT) such as the RC660N26KOFTL must be used.
What is the maximum allowable case temperature during DC operation?
At DC conduction, the maximum allowable case temperature is 120 °C when ITAV = 660 A, based on the derating curve in Figure 7 of the datasheet. This assumes two-sided cooling with 0.005 °C/W case-to-heatsink thermal resistance (RthCH) and full 10.5–21 kN clamping force. Exceeding 120 °C risks exceeding the 125 °C junction limit due to internal thermal resistance gradients.
How does the auxiliary cathode (pin 5) function in gate control?
The auxiliary cathode provides a low-impedance, low-inductance reference point for the gate terminal, decoupling gate triggering from voltage transients on the main cathode caused by high di/dt in the power loop. It must be connected directly to the gate driver's cathode return path - not tied to the main cathode - to maintain stable VGK during fast switching transitions and prevent erratic turn-on behavior.
T660N26TOFXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AB, B-PUK
- Packaging:
- Tray
- Product Status:
- Active
- Structure:
- Single
- Number of SCRs, Diodes:
- 1 SCR
- Voltage - Off State:
- 2.6 kV
- Current - On State (It (AV)) (Max):
- 660 A
- Current - On State (It (RMS)) (Max):
- 1500 A
- Voltage - Gate Trigger (Vgt) (Max):
- 2.2 V
- Current - Gate Trigger (Igt) (Max):
- 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):
- 13000A @ 50Hz
- Current - Hold (Ih) (Max):
- 300 mA
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Clamp On
T660N26TOFXPSA1 FAQ
1.How can I place an order for T660N26TOFXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for T660N26TOFXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T660N26TOFXPSA1 reliable?
The price and inventory of T660N26TOFXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T660N26TOFXPSA1 is usually 5 days.
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T660N26TOFXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T660N26TOFXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T660N26TOFXPSA1?
For technical support, including T660N26TOFXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T660N26TOFXPSA1 requirements.
6.How does Aetrix verify that T660N26TOFXPSA1 is sourced from the original manufacturer or authorized distributors?
All T660N26TOFXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T660N26TOFXPSA1 meets industry standards.
7.What is the process for return or replacement of T660N26TOFXPSA1?
All T660N26TOFXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T660N26TOFXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T660N26TOFXPSA1 part is unused and in its original packaging.
Return procedure for T660N26TOFXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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