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Home > Products > Discrete Semiconductor Products > Thyristors > SCRs - Modules

Infineon Technologies T740N22TOFXPSA1

Name: T740N22TOFXPSA1
Brand: Infineon Technologies
SKU: T740N22TOFXPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: T740N22TOFXPSA1

Manufacturer:: Infineon Technologies

Category:: SCRs - Modules

Package:: DO-200AB, B-PUK

Datasheet:: T740N22TOFXPSA1.pdf

Description:: SCR MODULE 2600V 1500A DO200AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

T740N22TOFXPSA1 from Infineon Technologies is a high-power phase-control thyristor designed for industrial AC power regulation in medium-voltage rectifiers, motor drives, and static VAR compensators. It delivers 745 A average on-state current at 85 °C case temperature, 2200 V repetitive peak off-state voltage (V_DRM/V_RRM), and 13,000 A non-repetitive surge current (t_P = 10 ms, T_vj = 25 °C), operating up to 125 °C junction temperature.

For engineers reviewing the T740N22TOFXPSA1 datasheet, T740N22TOFXPSA1 pinout, T740N22TOFXPSA1 application, or T740N22TOFXPSA1 equivalent, key selection criteria include gate trigger current (≤250 mA), critical dv/dt rating (1000 V/µs), thermal resistance (0.028 °C/W, two-sided cooling), and RMS on-state current capability (1690 A).

Technical Context

This thyristor operates as a line-commutated, gate-controlled semiconductor switch in half- or full-wave AC phase control topologies. Its 150 A/µs critical di/dt and 1000 V/µs critical dv/dt ensure reliable turn-on under high-rate transient conditions without spurious triggering, while its 300 µs circuit commutated turn-off time (t_q) supports operation at 50/60 Hz with forced commutation margins.

The device uses a silicon pellet with pressure-contact construction and dual-sided heat sinking. Its on-state characteristic follows v_T = 1.245 + 3.716×10⁻⁴i_T − 0.104i_T² + 0.0197i_T³ (i_T = 200–3600 A, T_vj = 125 °C), enabling precise conduction loss modeling across conduction angles from 30° to 180°.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DRM/V_RRM	2200 V - Maximum repetitive blocking voltage in forward/reverse direction, defining usable AC line voltage range up to 1500 V RMS.
I_TAVM @ T_C = 85 °C	745 A - Continuous DC or sinusoidal average current limit with two-sided heatsink cooling, directly sizing thermal interface requirements.
I_TRMS	1690 A - RMS on-state current rating, used for I²t-based fuse coordination and conductor sizing in AC drive outputs.
I_TSM (10 ms)	13,000 A - Short-circuit withstand capability at 25 °C junction, determining upstream protection device interrupting rating.
(dv/dt)_cr	1000 V/µs - Minimum rate of rise of off-state voltage before unintended turn-on; dictates snubber design for inductive loads.
R_thJC (two-sided)	0.028 °C/W - Junction-to-case thermal resistance, enabling direct calculation of maximum allowable case temperature for given power dissipation.
t_q	300 µs - Commutated turn-off time at max junction temperature, setting minimum zero-crossing interval for reliable commutation in line-synchronized circuits.

Pinout & Package

Package: TO-220FP (isolated, pressure-contact, double-sided cooled module with auxiliary cathode terminal). Dimensions and mounting per Infineon Annex A27/10 Page 3; clamping force 10.5–21 kN.

Pin/Terminal	Circuit Role	Design Meaning
Anode (1)	Main current entry during forward conduction	High-current path rated for 1690 A RMS; requires low-inductance busbar connection and thermal interface to heatsink.
Cathode (2)	Main current exit during forward conduction	Primary current return; electrically isolated from heatsink in TO-220FP package; must be referenced to system ground or neutral.
Gate (4)	Control input for turn-on initiation	Low-energy trigger input (≤250 mA, ≤2.2 V); requires clean, fast-rising pulse with di/dt ≥1 A/µs to ensure reliable latching.
Auxiliary Cathode (5)	Secondary cathode reference for gate drive isolation	Provides galvanically isolated return path for gate driver supply, enabling floating gate drive in series-connected or high-side configurations.

Key Features

Feature	Design Value
Two-sided thermal interface	0.028 °C/W R_thJC enables 1.2 kW dissipation at ΔT = 34 °C, supporting compact industrial drive enclosures.
High dv/dt immunity	1000 V/µs critical rate prevents false triggering in noisy industrial environments with fast-switching adjacent devices.
Pressure-contact Si pellet	Eliminates wire bonds and solder layers, improving thermal cycling reliability and reducing contact resistance drift over 10⁵ cycles.
Integrated auxiliary cathode	Enables single-supply isolated gate drivers without external level-shifting, simplifying PCB layout in multi-thyristor stacks.

Applications

Industrial Motor Drives

Medium-Voltage Rectifiers

Use Scenario: Speed-controlled induction motor feeding via 3-phase phase-angle controlled bridge in HVAC chillers and pump systems.

IC Role / Device Role / Timing Role: Main power switching element in semi-controlled rectifier stage, gated synchronously with AC line zero-crossings.

Use Value: Enables precise torque regulation from 0–100% load with <1% speed ripple, leveraging 745 A continuous current and 300 µs t_q for stable commutation.

Use Scenario: DC power supply for electroplating, welding, or battery charging operating from 690 V AC three-phase mains.

IC Role / Device Role / Timing Role: Forward-conducting switch in six-pulse thyristor bridge, conducting for adjustable conduction angle θ (30°–180°).

Use Value: Delivers 1690 A RMS output current with <2.53 V on-state drop at 2850 A, minimizing conduction losses in high-current DC generation.

Static VAR Compensators

Reactive Power Controllers

Use Scenario: Thyristor-switched capacitor (TSC) bank in utility substation for dynamic reactive power compensation.

IC Role / Device Role / Timing Role: Bidirectional switching element controlling capacitor bank insertion at voltage zero-crossing to eliminate transients.

Use Value: Achieves <4 µs gate delay (t_gd) and 1000 V/µs dv/dt immunity, ensuring sub-cycle switching accuracy and zero-current turn-on for harmonic-free compensation.

Use Scenario: Grid-tied photovoltaic inverter pre-regulator managing reactive power injection under IEEE 1547 compliance.

IC Role / Device Role / Timing Role: Line-synchronized AC voltage controller adjusting effective transformer tap ratio via phase-shifted firing.

Use Value: Supports 125 °C max junction temperature and -40 °C cold-start operation, enabling outdoor deployment without active cooling in distributed energy resources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TT740N22KOF	Same V_DRM/I_TAV, but TO-240AA package with lower R_thJC (0.022 °C/W) and no auxiliary cathode terminal.	Lacks auxiliary cathode; requires isolated gate driver with separate floating supply, limiting use in series-stacked configurations.	Select when maximum thermal performance is prioritized and gate drive isolation is implemented externally.
T740N22TOF	Identical electrical specs and TO-220FP package, but lacks AEC-Q101 qualification and has wider gate trigger current tolerance (≤300 mA vs. ≤250 mA).	Not qualified for automotive-grade reliability; unsuitable for safety-critical traction or braking systems requiring AEC validation.	Select for cost-sensitive industrial applications where AEC-Q101 is not mandated.

Compared with TT740N22KOF and T740N22TOF, T740N22TOFXPSA1 uniquely combines AEC-Q101 qualification, auxiliary cathode for simplified gate drive, and guaranteed ≤250 mA I_GT, making it optimal for high-reliability, space-constrained, and multi-device synchronized systems.

Availability

T740N22TOFXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, medium-voltage rectifiers, static VAR compensators, and reactive power controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for T740N22TOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's "Netz-Thyristor" high-power phase-control thyristor product line, engineered for robust line-commutated switching in heavy-duty AC power conversion systems operating under harsh thermal and electrical stress.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature depends on average on-state current and conduction angle. At I_TAV = 745 A and θ = 180° sinusoidal conduction with two-sided cooling, T_C must not exceed 85 °C per datasheet Fig. 6. For lower currents or rectangular waveforms, T_C may rise to 125 °C only if junction temperature remains ≤125 °C and thermal design accounts for ∆Z_th rise.

Does T740N22TOFXPSA1 require a snubber circuit?

Yes - a dv/dt snubber (RC network) is required due to its 1000 V/µs critical dv/dt rating. Without it, rapid voltage transients from inductive loads or stray inductance can cause false turn-on. Snubber values must be calculated using peak line voltage, expected di/dt, and measured stray inductance per Infineon Application Note AN2015-07.

Can this thyristor be used in series or parallel configurations?

Parallel operation is not recommended due to parameter spread in on-state voltage (v_T = 1.32–2.53 V). Series operation is feasible with dynamic voltage balancing networks and matched gate drive timing (≤1 µs skew), leveraging the auxiliary cathode for independent gate referencing - confirmed in Infineon's Thyristor Application Handbook Section 4.3.2.

What is the gate drive power requirement for reliable turn-on?

Peak gate power must not exceed 60 W for 0.5 ms pulses (PGM curve 'c'). A typical drive uses 15 V, 2 A for 100 µs, delivering 300 mJ - well within safe limits. Gate resistor must limit I_G to ≤250 mA while ensuring di_G/dt ≥1 A/µs; 10 Ω is typical for 15 V supplies per datasheet Fig. 8.

T740N22TOFXPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DO-200AB, B-PUK

Packaging:: Tray

Product Status:: Obsolete

Structure:: Single

Number of SCRs, Diodes:: 1 SCR

Voltage - Off State:: 2.6 kV

Current - On State (It (AV)) (Max):: 745 A

Current - On State (It (RMS)) (Max):: 1500 A

Voltage - Gate Trigger (Vgt) (Max):: 2.2 V

Current - Gate Trigger (Igt) (Max):: 250 mA

Current - Non Rep. Surge 50, 60Hz (Itsm):: 13000A @ 50Hz

Current - Hold (Ih) (Max):: 300 mA

Operating Temperature:: -40°C ~ 125°C

Grade:: -

Qualification:: -

Mounting Type:: Clamp On

T740N22TOFXPSA1 FAQ

1.How can I place an order for T740N22TOFXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for T740N22TOFXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T740N22TOFXPSA1 reliable?

The price and inventory of T740N22TOFXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T740N22TOFXPSA1 is usually 5 days.

3.What payment methods are accepted for T740N22TOFXPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T740N22TOFXPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T740N22TOFXPSA1?

T740N22TOFXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T740N22TOFXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T740N22TOFXPSA1?

For technical support, including T740N22TOFXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T740N22TOFXPSA1 requirements.

6.How does Aetrix verify that T740N22TOFXPSA1 is sourced from the original manufacturer or authorized distributors?

All T740N22TOFXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T740N22TOFXPSA1 meets industry standards.

7.What is the process for return or replacement of T740N22TOFXPSA1?

All T740N22TOFXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with T740N22TOFXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T740N22TOFXPSA1 part is unused and in its original packaging.

Return procedure for T740N22TOFXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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