Infineon Technologies T930N34TOFVTXPSA1

Overview

T930N34TOFVTXPSA1 from Semikron is a high-power phase-control thyristor designed for industrial AC power regulation in medium- to high-voltage line-commutated converters. It delivers 930 A average on-state current at 85 °C case temperature, 3400 V repetitive peak off-state voltage (VDRM/VRRM), and supports 19.5 kA non-repetitive surge current (ITSM) - enabling use in 3.3 kV traction rectifiers and HVDC converter valves.

For engineers reviewing the T930N34TOFVTXPSA1 datasheet, T930N34TOFVTXPSA1 pinout, T930N34TOFVTXPSA1 application, or T930N34TOFVTXPSA1 equivalent, key selection criteria include verified gate trigger current (≤250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.0195 °C/W two-sided), and pressure-contact packaging for forced-cooled high-current systems.

Technical Context

This thyristor operates as a line-commutated, gate-controlled switch in phase-angle controlled rectification circuits. Its design centers on high di/dt immunity (80 A/µs critical on-state rise rate) and robust dv/dt blocking (1000 V/µs), ensuring reliable turn-on under high-noise grid conditions and stable commutation in 50/60 Hz applications with inductive loads.

Thermal performance is defined by dual-sided cooling capability and a 125 °C maximum junction temperature. The device uses silicon pellet with pressure-contact construction and requires precise clamping force (20–45 kN) to maintain specified RthJC and prevent thermal runaway during sustained 2110 A RMS conduction.

Key Specifications

Pinout & Package

Package: Pressure-contact, disc-type thyristor with isolated anode/cathode faces and dual gate terminals (flat and round variants per AMP 60598). Requires mechanical clamping (20–45 kN) between copper heatsinks for thermal and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor applications.

Compared with TT930N34KOF and T930N34KOFTL, the T930N34TOFVTXPSA1 uniquely supports ultra-high-current, forced-cooled industrial systems via its pressure-contact architecture and validated 20–45 kN clamping interface - making it irreplaceable in HVDC valve stacks and 3.3 kV motor drives where thermal density exceeds 1.5 MW/m².

Availability

T930N34TOFVTXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, static VAR compensators, HVDC converter valves, and traction rectifier systems requiring stable component supply across multi-year production cycles.

Supply support for T930N34TOFVTXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability, high-power discrete devices and modules for industrial, energy, and transportation applications.

This part belongs to Semikron's "Netz-Thyristor" series, engineered specifically for line-commutated AC/DC conversion in utility-scale infrastructure where long-term thermal stability, surge resilience, and gate noise immunity are mission-critical.

FAQ

What is the required gate trigger pulse specification for reliable turn-on?

The T930N34TOFVTXPSA1 requires a minimum gate trigger current of 250 mA (max) at 2.2 V (max) with 1 A/µs diG/dt, delivered as a ≥20 µs pulse. Gate drive circuits must deliver ≥1 A peak current to ensure latching at high junction temperatures, and auxiliary cathode (pin 5) must be used to minimize gate loop inductance.

Can this thyristor be used in asymmetrical (anti-parallel) configurations?

Yes - the device is fully rated for bidirectional blocking (VDRM = VRRM = 3400 V) and is commonly deployed in anti-parallel pairs for AC phase control. However, each unit must be independently triggered with matched gate timing to avoid shoot-through; gate isolation and <5 µs synchronization are mandatory.

What clamping force range ensures optimal thermal and electrical contact?

A clamping force of 20–45 kN is strictly required, applied uniformly across the anode and cathode faces using calibrated torque tools. Deviation outside this range increases RthJC beyond 0.0195 °C/W and risks interfacial arcing or thermal runaway at rated RMS current.

How does the transient thermal impedance affect derating at 120° conduction angle?

At 120° conduction, ZthJC rises by 0.00489 °C/W above DC value (two-sided cooling), increasing junction temperature rise by ~10.3 °C at 2110 A RMS. Derating to 850 A ITAVM is required to maintain Tvj ≤ 125 °C under continuous operation with standard heatsink interface materials.