Infineon Technologies TD104N12KOFHPSA1

Overview

TD104N12KOFHPSA1 from Infineon Technologies is a phase-control thyristor module with dual 1200 V VDRM/VRRM, 102 A ITAVM (TC = 85°C), 2050 A ITSM (10 ms), 0.85 V VT0 threshold voltage, and 2.43 mΩ rT slope resistance - designed for high-power AC line-controlled rectification and crowbar protection in industrial drive systems.

For engineers reviewing the TD104N12KOFHPSA1 datasheet, TD104N12KOFHPSA1 pinout, TD104N12KOFHPSA1 application, or TD104N12KOFHPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.35 K/W), pressure-contact construction for cycle reliability, electrically insulated baseplate, and gate trigger parameters (IGT ≤ 120 mA, VGT ≤ 1.4 V) under 12 V forward bias.

Technical Context

This dual-thyristor module implements forced-commutated phase-angle control in AC power circuits, supporting both half-wave and full-wave configurations. Its 140°C maximum junction temperature, 2.5 kV isolation test voltage, and 150 µs typical turn-off time (tq) enable robust operation in static transfer switches and UPS rectifiers where controlled conduction angle and fault-current clamping are critical.

The pressure-contact die attachment ensures stable thermal performance across repeated thermal cycling, while the 12.5 mm creepage distance and Class I basic insulation (AlN substrate) meet IEC61140 requirements for industrial mains-connected equipment operating at up to 102 A RMS per arm.

Key Specifications

Pinout & Package

TD104N12KOFHPSA1 uses an industry-standard press-pack module package with electrically insulated baseplate (AlN ceramic), 20 mm baseplate thickness, and M1/M2 screw terminals. Mechanical mounting torque: 4 Nm ±15% (M1); electrical terminal torque: 4 Nm ±10% (M2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT104N12KOFHPSA1, TD104N12KOFHPSA1 adds integrated AlN isolation without sacrificing current rating, while TD104N14KOFHPSA1 trades 70 V higher blocking for marginally higher conduction loss - making the original optimal for standard 690 VAC industrial drives requiring certified isolation.

Availability

TD104N12KOFHPSA1 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, crowbar protection circuits, and static transfer switches requiring stable component supply, long-life thermal cycling performance, and certified 2.5 kV isolation.

Supply support for TD104N12KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

This part belongs to Infineon's high-power thyristor module product line, engineered specifically for ruggedized AC power control in mission-critical industrial infrastructure where reliability under thermal and electrical stress is non-negotiable.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature (TC) for continuous operation is +130°C, as specified in the mechanical properties section. Operation above this temperature risks irreversible degradation of the AlN insulation and pressure-contact interface. Derating curves in the datasheet show that at TC = 100°C, ITAVM remains at 102 A, but drops to 85 A at TC = 120°C due to thermal resistance accumulation.

Does TD104N12KOFHPSA1 require external snubbers?

Yes - due to its 1000 V/µs critical dv/dt rating, external RC snubbers are required for inductive loads or long cable runs to suppress voltage transients exceeding this threshold. Typical design uses 0.1 µF/100 Ω per arm, verified by measurement of vD waveform during turn-off under worst-case di/dt conditions.

Can both thyristor arms be triggered simultaneously in parallel?

No - simultaneous triggering of both arms in parallel is not recommended. The module is designed for complementary or interleaved firing (e.g., B6 rectifier). Parallel connection would cause current imbalance due to parameter spread (VT0, tq), risking thermal runaway; derating by ≥20% and active current sharing are mandatory if attempted.

What is the gate drive power requirement for reliable turn-on?

Peak gate power must not exceed 100 W for 0.5 ms (curve "c" in Fig. 6), corresponding to 120 mA × 1.4 V = 168 mW average during trigger. Practical drivers deliver 2 A peak for 20 µs (per IEC 747-6), ensuring latching current (IL ≤ 620 mA) is exceeded even at Tvj = 140°C and low di/dt conditions.