Infineon Technologies TD210N18KOFHPSA1

Overview

TD210N18KOFHPSA1 from Infineon Technologies is a phase-control thyristor module designed for high-power AC line switching and rectification in industrial drive systems. It features 1800 V repetitive peak off-state voltage (VDRM/VRRM), 210 A average on-state current at TC = 85 °C, 6600 A non-repetitive surge current (ITSM), and pressure-contact silicon die construction for thermal and mechanical robustness - deployed in static power controllers and UPS rectifiers.

For engineers reviewing the TD210N18KOFHPSA1 datasheet, TD210N18KOFHPSA1 pinout, TD210N18KOFHPSA1 application, or TD210N18KOFHPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.124 K/W), gate trigger current (≤200 mA), critical dv/dt rating (1000 V/µs), and electrically insulated baseplate compatibility with forced-air or liquid-cooled heatsinks.

Technical Context

This dual-thyristor module operates in B2 (two-pulse) or B6 (six-pulse) bridge configurations for AC-to-DC conversion and phase-angle control. Its pressure-contact die architecture eliminates wire bonds, enabling high di/dt capability (150 A/µs) and stable performance under repeated surge stress up to 6.6 kA for 10 ms.

Thermal management relies on low RthJC (0.124 K/W per arm) and RthCH (0.04 K/W per arm), supporting continuous operation at case temperatures up to +125 °C. The module's 3.6 kV insulation test voltage (1 sec RMS) and 17 mm creepage distance meet IEC 61140 Class 1 safety requirements for industrial mains-connected equipment.

Key Specifications

Pinout & Package

TD210N18KOFHPSA1 is housed in an industrial-standard press-pack module with electrically insulated AlN ceramic baseplate (Class 1 insulation, EN 61140), 50 mm baseplate width, and M2 terminal screws (12 Nm torque). The module contains two anti-parallel thyristor arms sharing common cathode/anode terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT210N18KOFHPSA1, TD210N18KOFHPSA1 offers integrated baseplate isolation-reducing BOM count and assembly risk-while TD210N16KOFHPSA1 trades voltage headroom for faster availability in mid-voltage applications.

Availability

TD210N18KOFHPSA1 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, and static power switches requiring stable component supply across industrial OEM production cycles.

Supply support for TD210N18KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's "Netz-Thyristor-Modul" series, engineered for ruggedized, high-reliability AC power control in industrial drives, energy infrastructure, and grid-tied systems.

FAQ

What is the maximum allowable junction temperature for TD210N18KOFHPSA1?

The absolute maximum junction temperature (Tvj max) is 125 °C, as specified in the official Infineon technical information document revision 3.1. Operation beyond this limit risks irreversible degradation of the silicon die and pressure-contact interface. Thermal design must ensure that transient and steady-state junction temperatures remain within this bound using the provided RthJC (0.124 K/W) and ZthJC transient curves.

Does TD210N18KOFHPSA1 require a heatsink? If so, what thermal resistance is recommended?

Yes - mandatory heatsinking is required. For continuous 210 A operation at TC = 85 °C, the total thermal resistance from junction to ambient (RthJA) must be ≤0.42 K/W (calculated as (125 − 85) / 210 × 1000). Given RthJC = 0.124 K/W and RthCH = 0.04 K/W, the heatsink-to-ambient resistance (RthHA) should be ≤0.256 K/W under forced-air cooling (≥5 m/s) or ≤0.12 K/W for liquid cooling.

Can TD210N18KOFHPSA1 be used in a single-phase configuration?

Yes - it supports single-phase B2 (two-pulse) bridge operation, as confirmed by the datasheet's ID vs. RthCA curves for B2 topology. In this mode, one thyristor arm conducts positive half-cycles and the other conducts negative half-cycles, enabling full-wave controlled rectification with adjustable output voltage from 0 to ~0.9 × VAC.

What gate drive requirements must be met to ensure reliable turn-on?

A minimum gate trigger current of 1 A (with diG/dt ≥ 1 A/µs) and pulse width ≥20 µs is required for guaranteed latching at Tvj = 25 °C. Gate voltage must reach ≥2 V within the pulse, and gate-cathode impedance must be ≤10 Ω. For robust operation across temperature, gate peak power must stay within the PGM curve (e.g., ≤150 W for 0.1 ms pulses).