Infineon Technologies TD425N16KOFHPSA2

Overview

TD425N16KOFHPSA2 from Infineon Technologies is a phase-control thyristor module designed for high-power AC line switching and rectification in industrial power electronics. It features 1600 V repetitive peak off-state voltage (VDRM/VRRM), 471 A average on-state current at TC = 85 °C, 14.5 kA non-repetitive surge current (ITSM), and electrically insulated baseplate construction for safe mounting in grounded heatsink systems. It is deployed in soft starters, UPS rectifiers, and static bypass switches.

For engineers reviewing the TD425N16KOFHPSA2 datasheet, TD425N16KOFHPSA2 pinout, TD425N16KOFHPSA2 application, or TD425N16KOFHPSA2 equivalent, key selection criteria include junction-to-case thermal resistance (0.065 K/W), gate trigger current (≤250 mA), critical dv/dt rating (1000 V/µs), and pressure-contact die attachment for high-cycle reliability under repetitive surge stress.

Technical Context

This dual-thyristor module implements a press-pack, double-sided cooled configuration with isolated baseplate and DIN 46244 A control terminals. Its 1600 V blocking rating supports 690 V AC three-phase line applications with margin, while the 250 µs circuit commutated turn-off time (tq) enables controlled commutation in phase-angle-controlled rectifiers and crowbar circuits.

The device uses Advanced Medium Power Technology (AMPT) with silicon pellets mounted via pressure contact-eliminating wire bonds and solder layers-to sustain high di/dt (120 A/µs) and robust thermal cycling. Its 0.35 mΩ slope resistance (rT) and 0.9 V threshold voltage (VT0) define conduction loss behavior under high RMS load currents up to 800 A.

Key Specifications

Pinout & Package

TD425N16KOFHPSA2 is housed in an industrial-standard press-pack module with electrically insulated aluminum nitride (AlN) baseplate and M1 (6 Nm) mechanical mounting points. Control terminals conform to DIN 46244 A (2.8 × 0.8 mm flat blade), and main power terminals are stud-type for bolted busbar connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT425N16KOFHPSA2, the TD variant offers identical performance with enhanced documentation traceability, while the TD425N18KOFHPSA2 trades no conduction or thermal penalty for +200 V blocking headroom-making it optimal for future-proofed 690–1000 VAC infrastructure designs.

Availability

TD425N16KOFHPSA2 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, and static bypass switches requiring stable component supply, long-lifecycle support, and certified industrial-grade thermal performance.

Supply support for TD425N16KOFHPSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

This part belongs to Infineon's high-power thyristor module product line, engineered specifically for ruggedized phase-angle control in motor drives, power conditioning, and grid-tied protection systems where reliability under repetitive surge and thermal cycling is mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (TC) is +125 °C, as specified in the thermal characteristics table. Operation above this temperature risks exceeding the 125 °C maximum junction temperature (Tvj max), potentially triggering thermal runaway or accelerated aging. Derating curves in the datasheet show ITAVM drops to ~300 A at TC = 100 °C for Θ = 180° conduction.

Does TD425N16KOFHPSA2 require external snubbers in a 6-pulse rectifier?

Yes-snubbers are required due to its 1000 V/µs critical dv/dt rating. In a B6 rectifier with fast line transients or inductive load switching, unclamped voltage spikes can exceed this threshold and cause false turn-on. A typical RC snubber (e.g., 100 Ω + 0.1 µF per arm) is recommended to limit dv/dt below 500 V/µs under worst-case commutation.

Can this module be used in anti-parallel configuration for AC switching?

Yes-its dual-arm structure (A1/K1 and A2/K2) supports anti-parallel connection for AC phase control. Each arm must be independently gated with matched timing to ensure symmetrical conduction. The insulated baseplate eliminates need for series isolation transformers, but gate drive circuits must maintain ≥3.6 kV isolation between control and power domains.

What is the gate drive power requirement for reliable triggering?

Reliable triggering requires a peak gate pulse of ≥1 A for ≥20 µs, with ≤1.5 V gate trigger voltage (VGT) and ≤250 mA gate trigger current (IGT) at 25 °C. The gate characteristic curve shows usable triggering area between 0.2–1.5 V and 1–100 mA; a 10 V/2 A pulse (20 W peak) ensures margin across temperature and aging.