Infineon Technologies TD430N22KOFXPSA1

Overview

TD430N22KOFXPSA1 from Infineon Technologies is a press-pack phase-control thyristor module rated for 2200 V repetitive peak off-state voltage (VDRM/VRRM), 430 A average on-state current (ITAVM) at TC = 85 °C, and 14 kA non-repetitive surge current (ITSM). It features electrically insulated baseplate, pre-applied thermal interface material (TIM), and Advanced Medium Power Technology (AMPT) for industrial power control in soft starters and static switches.

For engineers reviewing the TD430N22KOFXPSA1 datasheet, TD430N22KOFXPSA1 pinout, TD430N22KOFXPSA1 application, or TD430N22KOFXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.062 K/W), critical dv/dt rating (1000 V/µs), gate trigger voltage (≤2.2 V), and pressure-contact construction for high-cycle reliability in high-current AC line switching.

Technical Context

This dual-thyristor module operates in phase-controlled rectification and AC power regulation, supporting conduction angles from 30° to 180° in both sinusoidal and rectangular current waveforms. Its pressure-contact die assembly enables low parasitic inductance and stable thermal performance under high di/dt (150 A/µs) and high dv/dt (1000 V/µs) stress.

The device integrates two inverse-parallel thyristor arms in a single 60 mm baseplate package with basic insulation (IEC 61140 Class 1) and 3.6 kV RMS isolation test voltage. Gate drive requires ≤250 mA trigger current and tolerates up to 0.25 V non-trigger voltage at full blocking voltage, ensuring noise-immune turn-on in EMI-prone industrial environments.

Key Specifications

Pinout & Package

TD430N22KOFXPSA1 uses a press-pack, double-sided cooled, insulated-base module package with 60 mm × 60 mm footprint and M1 mechanical mounting (6 Nm torque). Electrical terminals are arranged as two isolated arms: each arm has anode (A), cathode (K), and gate (G) connections; control terminals conform to DIN 46244 A (2.8 × 0.8 mm flat blade).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT430N22KOFXPSA1 and TD430N22KOFXPSA2, TD430N22KOFXPSA1 uniquely combines pre-applied TIM, full –40…+130 °C storage range, and 3.6 kV isolation-making it optimal for high-reliability, low-variability production of industrial soft starters and UPS systems.

Availability

TD430N22KOFXPSA1 is available at Aetrix Electronics and suitable for soft starters, static switches, and crowbar protection systems requiring stable component supply, long-life thermal cycling, and certified isolation compliance.

Supply support for TD430N22KOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's High-Power Thyristor Module product line, engineered for robust phase-angle control in high-current AC power conditioning, where reliability under thermal and electrical stress is mission-critical.

FAQ

What is the maximum allowable junction temperature for TD430N22KOFXPSA1?

The maximum junction temperature (Tvj max) is 125 °C, as specified in the thermal characteristics section of the official Infineon technical information document revision 3.6. This limit applies under all operating conditions including surge and transient loading, and must be maintained via proper heatsink design using the provided RthJC (0.062 K/W) and RthCH (0.0075 K/W with TIM) values.

Does TD430N22KOFXPSA1 require external snubbers in typical soft starter applications?

Yes-due to its 1000 V/µs critical dv/dt rating, external RC snubbers are required to suppress voltage transients during commutation, especially when driving highly inductive motor loads. The recommended snubber design must limit dv/dt across the device below this threshold during turn-off to prevent spurious triggering.

Can TD430N22KOFXPSA1 be used in parallel configurations for higher current capacity?

No-this module is not designed for paralleling. Its pressure-contact construction and thermal layout assume single-module operation with dedicated heatsinking. Parallel use would cause current imbalance due to parameter spread and unequal thermal coupling, risking thermal runaway. For higher current, select a higher-rated module such as TD630N22KOFXPSA1.

What is the gate drive power requirement for reliable turn-on?

Gate drive must deliver ≥1 A peak trigger current for ≥20 µs to ensure latching, with ≤2.2 V maximum gate trigger voltage (VGT) and ≤250 mA maximum gate trigger current (IGT) at 25 °C. Peak gate power dissipation must stay within the PGM curve: e.g., 60 W for 0.5 ms pulses, as shown in Figure 6 of the technical information document.