Infineon Technologies TD570N16KOFXPSA1

Overview

TD570N16KOFXPSA1 from Infineon Technologies is a press-pack, dual-arm phase-control thyristor module rated for 1600 V repetitive peak off-state voltage (V_DRM/V_RRM), 600 A average on-state current (I_TAVM) at T_C = 85 °C, and 17 kA non-repetitive surge current (I_TSM). It employs pressure-contact silicon die technology with electrically insulated baseplate and is designed for high-reliability industrial power control in soft starters, static switches, and rectifier bridges.

For engineers reviewing the TD570N16KOFXPSA1 datasheet, TD570N16KOFXPSA1 pinout, TD570N16KOFXPSA1 application, or TD570N16KOFXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.058 K/W per module), critical dv/dt rating (1000 V/µs), gate trigger current (≤250 mA), and RMS on-state current capability (900 A).

Technical Context

This dual-thyristor module implements forced-commutated phase-angle control in AC line-frequency power conversion systems. Its pressure-contact construction eliminates wire bonds and enables high-current handling with low thermal resistance and robust short-circuit ruggedness. The device operates with 180° conduction angle capability and supports both two-pulse (B2) and six-pulse (B6) bridge configurations.

Thermal performance is defined by analytical Z_thJC transient impedance curves and DC thermal resistance values differentiated per arm and per module. Electrical isolation is certified to 3.6 kV RMS (1 sec) with creepage distance of 19 mm and basic insulation per IEC 61140 Class 1.

Key Specifications

Pinout & Package

TD570N16KOFXPSA1 is housed in an industrial-standard press-pack module with electrically insulated aluminum nitride (AlN) baseplate, 60 mm footprint, and M1 mechanical mounting (6 Nm torque). Terminals are arranged for dual-arm configuration with isolated gate and main power connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT570N16KOF and TD570N16KOFTLXPSA1, TD570N16KOFXPSA1 offers optimal balance of isolation integrity, surge robustness, and gate drive simplicity-making it preferred for standalone industrial soft starters and static switches where sensor integration is unnecessary.

Availability

TD570N16KOFXPSA1 is available at Aetrix Electronics and suitable for soft starter systems, static switching infrastructure, and industrial rectifier bridges requiring stable component supply across multi-year production cycles.

Supply support for TD570N16KOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing operations.

This part belongs to Infineon's high-power thyristor module product line, engineered specifically for industrial AC power control applications demanding high surge immunity, long service life, and reliable operation at elevated junction temperatures.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (T_C) is +125 °C, validated per IEC 60747-6. At this temperature, the device sustains 600 A average on-state current per arm with 0.058 K/W thermal resistance. Derating curves in the datasheet show linear reduction to 0 A at +130 °C storage limit, but operational use must remain within the 125 °C junction limit.

Does TD570N16KOFXPSA1 require forced cooling?

Forced cooling is not mandatory but strongly recommended above 300 A average load. Natural convection is insufficient due to 1450 g mass and 0.058 K/W R_thJC; typical designs use finned heatsinks with thermal interface material and airflow ≥2 m/s. The module's R_thCH of 0.02 K/W per arm assumes uniform mounting pressure and flatness ≤0.05 mm.

Can this module be used in parallel configurations?

Yes, but only with active current balancing-such as gate drive skewing or external ballast inductors-due to inherent parameter spread. The datasheet specifies ±15% variation in V_T0 and r_T, and parallel operation requires matched modules from same production lot, identical thermal mounting, and synchronized gate triggers with ≤100 ns skew.

What gate drive voltage and current are required for reliable turn-on?

A minimum gate trigger voltage of 2.2 V and current of 250 mA at 25 °C is required, with di/dt ≥1 A/µs. For robust operation across temperature, designs should deliver 4 V/500 mA pulses ≥20 µs wide. The gate non-trigger voltage limit is 0.25 V at 0.5×V_DRM, necessitating noise-immune PCB layout and twisted-pair gate wiring.